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    2SK1830 Search Results

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    2SK1830 Price and Stock

    Toshiba America Electronic Components 2SK1830-TE85L

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    Bristol Electronics 2SK1830-TE85L 13,766
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    2SK1830-TE85L 4,785 17
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    • 100 $0.15
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    Toshiba America Electronic Components 2SK1830TE85L

    50 MA, 20 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET
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    Quest Components 2SK1830TE85L 48,000
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    2SK1830TE85L 11,012
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    2SK1830TE85L 3,828
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    Toshiba America Electronic Components 2SK1830

    50 MA, 20 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1830 2,751
    • 1 $0.285
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    Win Source Electronics 2SK1830 57,000
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    Others 2SK1830 (TE85L)

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    Chip 1 Exchange 2SK1830 (TE85L) 2,500
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    Toshiba America Electronic Components 2SK1830 T5L

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    Win Source Electronics 2SK1830 T5L 21,000
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    2SK1830 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1830 Toshiba Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min 0.5) (max 1.5); R DS On 20 (max 40); Drain-Source Voltage (V): (max 20); Drain Current (mA): (max 50) Original PDF
    2SK1830 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1830 Toshiba TRANS MOSFET N-CH 20V 0.05A 3(2-2H1B) Scan PDF
    2SK1830 Toshiba Silicon N channel field effect transistor for high speed switching applications and analog switch applications Scan PDF
    2SK1830 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    2SK1830TE85L Toshiba 2SK1830 - TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal Original PDF
    2SK1830(TE85L,F) Toshiba 2SK1830 - Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R Original PDF
    2SK1830TE85LF Toshiba 2SK1830TE85LF - Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R Original PDF
    2SK1830TE85R Toshiba 2SK1830 - TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal Original PDF

    2SK1830 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ347

    Abstract: 2SK1830
    Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1830 Marking


    Original     		PDF 2SJ347 2SK1830 2SJ347 2SK1830

    Untitled

    Abstract: No abstract text available
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830

    Untitled

    Abstract: No abstract text available
    Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking


    Original     		PDF 2SK1830

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    2SA1955

    Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET

    2SJ347

    Abstract: 2SK1830 Toshiba 2SJ
    Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1830 Marking Unit: mm


    Original     		PDF 2SJ347 2SK1830 2SJ347 2SK1830 Toshiba 2SJ

    2SA1955

    Abstract: 2SK1830 HN7G01FU 2SK1830 MOSFET
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU 2SK1830 MOSFET

    HN7G01FU

    Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA

    Untitled

    Abstract: No abstract text available
    Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package


    Original     		PDF 2SK1830

    2SK1830

    Abstract: HN7G05FU RN2301
    Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent


    Original     		PDF HN7G05FU RN2301 2SK1830 HN7G05FU

    Untitled

    Abstract: No abstract text available
    Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking


    Original     		PDF 2SK1830

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    2SK1830

    Abstract: HN7G05FU RN2301
    Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent


    Original     		PDF HN7G05FU RN2301 2SK1830 HN7G05FU

    2SJ347

    Abstract: 2SK1830 Toshiba 2SJ
    Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1830 Marking Unit: mm


    Original     		PDF 2SJ347 2SK1830 2SJ347 2SK1830 Toshiba 2SJ

    2SJ347

    Abstract: 2SK1830
    Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V · High speed · Small package · Complementary to 2SK1830 Marking Unit: mm


    Original     		PDF 2SJ347 2SK1830 2SJ347 2SK1830

    Untitled

    Abstract: No abstract text available
    Text: SILICON N CHANNEL MOS TYPE 2SK1830 HIGH SPEED SW ITCHING APPLICATIONS. A N A L O G SWITCH APPLICATIONS. • 2.5 V olts G ate D rive. • Low Threshold V oltage : V th = 0 .5 ~ 1 .5 V . H igh Speed • Enhancem ent-M ode • S m a ll P ackage MARKING KI M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		PDF 2SK1830

    2SJ347

    Abstract: 2SK1830
    Text: TO SH IBA 2SJ347 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2SJ347 Unit in mm ANAROG SWITCH APPLICATIONS • Low Threshold Voltage : V t h = —0.5 ~ —1.5V • High Speed • Small Package • Complementary to 2SK1830


    OCR Scan     		PDF 2SJ347 2SK1830 2SJ347 2SK1830

    2SJ347

    Abstract: 2SK1830
    Text: TOSHIBA 2SJ347 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ347 HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANAROG SWITCH APPLICATIONS • Low Threshold Voltage : V ^ ——0.5~ —1.5V • High Speed • Small Package • Complementary to 2SK1830


    OCR Scan     		PDF 2SJ347 2SK1830 10//S 2SJ347 2SK1830

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K18 3 0 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS • 2.5V Gate Drive • Low Threshold Voltage : V£h = 0.5~1.5V • High Speed • Enhanncement-Mode • Small Package


    OCR Scan     		PDF 2SK1830

    ei33

    Abstract: 2SK1830 J-10
    Text: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 830 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT


    OCR Scan     		PDF 2SK1830 10//S ei33 2SK1830 J-10

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K1 8 3 0 HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS 1.6 ± 0.2 0 .8 + 0.1 < -o ÖÖ + I 2.5V Gate Drive Low Threshold Voltage : V'th = 0.5~ 1.5V —Q —


    OCR Scan     		PDF 2SK1830

    Untitled

    Abstract: No abstract text available
    Text: 2SJ347 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2SJ347 Unit in mm ANAROG SWITCH APPLICATIONS • • • • Low Threshold Voltage : Vth= —0.5~ —1.5V High Speed Small Package Complementary to 2SK1830


    OCR Scan     		PDF 2SJ347 2SK1830

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN7G01 FU TO SHIBA M U LTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER M A N A G E M E N T SWITCH APPLICATION 2.1 i 0,1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATIO N Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent


    OCR Scan     		PDF HN7G01 2SA1955 2SK1830 HN7G01FU

    2SA1955

    Abstract: 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA
    Text: TO SH IBA TENTATIVE HN7G01FU TOSHIBA MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 i 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent


    OCR Scan     		PDF HN7G01FU N7G01FU 2SA1955 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA