2SK186 Search Results

Contextual Info: 2SK1862, 2SK1863 Silicon N Channel MOS FET REJ03G0982-0200 Previous: ADE-208-1329 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator

2SK1153

Abstract: 2SK1154 2SK1862 2SK1863
Contextual Info: 2SK1862, 2SK1863 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator 2 12 1 1. Gate 2. Drain

Hitachi DSA002781

Contextual Info: 2SK1862, 2SK1863 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline 2SK1862, 2SK1863 Absolute Maximum Ratings Ta = 25°C

Hitachi DSA002748

Contextual Info: 2SK1862, 2SK1863 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220FM D

Contextual Info: Panasonic Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS 5 .0 ± 0.1 • Features • • • • • Unit : mm Avalanche energy capability guaranteed : EAS >15mJ VGss= ±30V guaranteed High-speed switching: tf = 26ns No secondary breakdown Radial taping possible

2SK1860

Contextual Info: Silicon Junction FETs Small Signal 2SK1860 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For electret capacitor microphone +0.10 0.40 –0.05 +0.02 2.1±0.1 0.12 –0.01 3 • Absolute Maximum Ratings Ta = 25°C (0.95)

2SK1395

Abstract: 2sk2006 2SK1539 2SK1685
Contextual Info: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695

2SK1865

Abstract: ld12a diode 9D Bp co2cc 2sk18
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1865 Field Effect Transistor Industrial A p p lica tio n s Unit in m m Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications F ea tu res • Low Drain-Source ON Resistance - Rds (ON) = 0-55Q (Typ.)

Hitachi DSA00276

Contextual Info: 2SK1869 L , 2SK1869(S) Silicon N-Channel MOS FET ADE-208-1330 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter

Contextual Info: Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 26ns ● No secondary breakdown ● Allowing to supply by the radial taping

Contextual Info: 2SK1868 Power F-MOS FETs 2SK1868 Silicon N-Channel Power F-MOS • Features Unit : mm 5.0±0.1 ON-resistance RDS on : R DS(on)1= 0.135Ω ● High-speed switching : tf= 53ns secondary breakdown ● Low-voltage ● Radial taping possible ■ Applications ● Non-contact

Contextual Info: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Power MOSFET B-pack E-pack STO-220 N-Channel, Enhancement type Absolute Maximum Ratings Tch V dss V gss Id Pt max [ ”C ] [V ] [V ] [A] [w ] [O ] [pF] [pF] [ns] [ns] 2SK1861 150 +20 4 10

2SK2574

Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Contextual Info: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative

2SK1862

Abstract: 2SK1862-E 2SK1863 2SK1863-E PRSS0003AD-A
Contextual Info: 2SK1862, 2SK1863 Silicon N Channel MOS FET REJ03G0982-0200 Previous: ADE-208-1329 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator

Contextual Info: 2SK1869 L , 2SK1869(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter

2SK1400A

Abstract: 2SK1869 Hitachi DSA00347
Contextual Info: 2SK1869 L , 2SK1869(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline

Contextual Info: 2SK1862, 2SK1863 Silicon N Channel MOS FET REJ03G0982-0200 Previous: ADE-208-1329 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator

Hitachi DSA00279

Contextual Info: 2SK1869 L , 2SK1869(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline

Contextual Info: 2SK1867 Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS Unit : mm • Features 10.0±0.2 energy capability guaranteed : EAS >15mJ secondary breakdown ● Radial taping possible 18.0±0.5 Solder Dip ● No switching: tf = 26ns 90˚ 2.5±0.2 ● VGSS= ±30V guaranteed

Contextual Info: S M D l S f i v '; - * * /\°7~M 0S F E T Surface Mownting Technology Device o u t l in e d im e n s io n s 2SK1861 Case E-pack [F4E15LJ 150V 4 A [Unit ! mm] 6.6 ± 0.2 52 ±02 •4VgE»3tJffi„ • y - l 'f f iB Z D r t S o ÄS T G ate (D (4) Drain (3) Source

smd diode UM 2a

Abstract: 2SK1861 mr02 12-24VA
Contextual Info: S M D M v 'J-X /\°7 ~ M 0 S F E T Surface Mounting Technology Device M flN -ä E I 2SK1861 [ F 1 e E 4 5 1 L 5 V OUTLINE DIMENSIONS Case : E-pack [Unit ! mm] ] A 4 6.6 ±02 aap £ « g ^ !ft] • 4 V . ! l ! il ii) S o EIAJ 2.55 o.r> to. i h No a -y l-ie -^ iîiJ )

2SK1860

Contextual Info: Silicon Junction FETs Small Signal 2SK1860 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For electret capacitor microphone +0.10 0.40 –0.05 +0.02 2.1±0.1 M Di ain sc te on na tin nc ue e/ d 0.12 –0.01 1.5±0.2 2 2.20±0.15

mj 13002

Abstract: 2SK1867 2sk18
Contextual Info: Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 26ns ● No secondary breakdown ● Allowing to supply by the radial taping

Contextual Info: 2SK1862,2SK1863 Silicon N-Channel MOS FET HITACHI Application H igh speed p o w e r sw itching Features • L ow o n -rcsistance • H igh speed sw itc h in g • L o w drive c u rre n t • N o secondary breakdow n • S uitable for S w itc h in g re g u la to r