2SK18 Search Results

Contextual Info: 2SK1891 2090_LD Low Drive Series V Dss = 3 0 V 2093 INI Channel Power MOSFET 4206 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Surface mount type device making the following possible. • Reduction in the number of m anufacturing processes for 2SK1891-applied equipment.

Contextual Info: SILICON N CHANNEL MOS TYPE 2SK1830 HIGH SPEED SW ITCHING APPLICATIONS. A N A L O G SWITCH APPLICATIONS. • 2.5 V olts G ate D rive. • Low Threshold V oltage : V th = 0 .5 ~ 1 .5 V . H igh Speed • Enhancem ent-M ode • S m a ll P ackage MARKING KI M A X IM U M RATINGS Ta = 25°C

Contextual Info: 2SK1862, 2SK1863 Silicon N Channel MOS FET REJ03G0982-0200 Previous: ADE-208-1329 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator

2SJ344

Abstract: 2SK1827
Contextual Info: TOSHIBA 2SJ344 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ344 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANAROG SWITCH APPLICATIONS 2.1 ± 0.1 Low Threshold Voltage : Vth = - 0 .8 - - 2.5 V High Speed Enhancement-Mode Small Package Complementary to 2SK1827

2SK1848

Contextual Info: O rdering num ber: E N 4 50 0 _ 2SK1848 N-Channel MOS Silicon FET No.4500 Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage

2SK1840

Contextual Info: Ordering number: E N 4635 No.4635 I 2SK1840 N-Channel Enhancement MOS Silicon FET Analog Switch Applications Features • Large I Vfs I . • Enhancement type. • Low ON resistance. Absolute Maximum Ratings at Ta = 25°C Drain-to-Source Voltage V dss Gate-to-Source Voltage

2SK1880S

Contextual Info: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK1880S Features TO-252 Unit: mm Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1

2SK1823-01

Abstract: DDQ3114 2sk mosfet
Contextual Info: 2SK1823-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ . _ - _ _ _ _ _ _ FAP-IIIA SERIES • Features Outline Drawings • High cu rren t • L ow o n-resistance • N o secondary b reakd ow n

te 1819

Abstract: 2SK1819-01M
Contextual Info: 2SK1819-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL ENHANCEMENT TYPE MOS-FET • Features ■ O u tlin e Drawings • Include fast recovery diode • High voltage • Low driving power • Avalanche-proof ■ Applications Gate • M otor controllers

2SK1828

Contextual Info: 2SK1828 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK1828 ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 入力インピーダンスが高く, 駆動電流が極めて小さい。 • Vth が低く, 低電圧での CMOS などからの直接駆動が可能。

2SJ342

Abstract: 2SK1825
Contextual Info: 2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.8~−2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1825

2SJ347

Abstract: 2SK1830
Contextual Info: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1830 Marking

MV3000

Abstract: RL5050 2SK1826
Contextual Info: 2SK1826 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK1826 ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 入力インピーダンスが高く, 駆動電流が極めて小さい。 • Vth が低く, 低電圧での CMOS などからの直接駆動が可能。

2SJ345

Abstract: 2SK1828
Contextual Info: 2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1828 Marking

EN4114

Abstract: q 4114 2SK180 2SK1806 N1593 2sk18
Contextual Info: I Òr d e rin g n u m b e r : EN 4 1 1 4 2SK1806 No.4114 N -Channel Junction Silicon FET SAiYO Low-Frequency G eneral-Purpose Amp Applications Im pedance conversion i Z f / / à JlC • . s . F e a tu re s / / / / •Low frequency am plifiers, impedance conversion, ideal for p o te n ti/r p fe te r s |a n a l^ s w itc h ^ , and

2SK1153

Abstract: 2SK1154 2SK1862 2SK1863
Contextual Info: 2SK1862, 2SK1863 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator 2 12 1 1. Gate 2. Drain

k1832

Abstract: K1831 2SK1157 2SK1158 2SK1831 2SK1832
Contextual Info: 2SK1831, 2SK1832 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 2

2SK1808

Abstract: 2SK1340 DSA003639
Contextual Info: 2SK1808 Silicon N-Channel MOS FET ADE-208-1322 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter

2SK1340

Abstract: 2SK1807 DA40
Contextual Info: 2SK1807 Silicon N Channel MOS FET Application TO-220AB High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 12 2 3 1. Gate

TOP-220

Abstract: TOP220 top 220 2SK1834 2SK183
Contextual Info: Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown 16.7±0.3 4.2±0.2 2.7±0.2 φ3.1±0.1 4.0

2SK1846

Contextual Info: Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 20mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.4±0.3 8.5±0.2 6.0±0.5 ● Contactless relay

2SK1341

Abstract: 2SK1859 DSA003759
Contextual Info: 2SK1859 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3PFM D G 1 S 2 3 1. Gate 2. Drain

Contextual Info: T O SH IB A 2SK1829 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 829 HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS 2.1 ± 0.1 1.25 ± 0.1 EE- 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V 2 High Speed

Contextual Info: 2SK1817-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ T¥T - F - lll • Features r p n i r o E R o I E b Outline Drawings • High current • Low no-resistance • No secondary b reakd ow n