2SK191 Search Results

2SK191 Datasheets (50)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK191	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	101.94KB	1
2SK191	Unknown	FET Data Book	Scan	PDF	101.29KB	2
2SK1910	Hitachi Semiconductor	Mosfet Guide	Original	PDF	6.15MB	1147
2SK1910	Renesas Technology	Silicon N-Channel MOS FET	Original	PDF	64.55KB	9
2SK1910	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF	221.49KB	2
2SK1910	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	51.6KB	1
2SK1910	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	71.83KB	1
2SK1910	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	68.79KB	1
2SK1910	Unknown	FET Data Book	Scan	PDF	113.17KB	2
2SK1911	Hitachi Semiconductor	Silicon N Channel MOS FET, High speed power switching	Original	PDF	151.86KB	7
2SK1911	Renesas Technology	Silicon N-Channel MOS FET	Original	PDF	66.8KB	9
2SK1911	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF	137.39KB	1
2SK1911	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	68.79KB	1
2SK1911	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	51.6KB	1

2SK1911	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	71.83KB	1
2SK1911	Unknown	FET Data Book	Scan	PDF	113.16KB	2
2SK1913	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK1913	Toshiba		Original	PDF	44.05KB	9
2SK1913	Toshiba	Silicon N-Channel MOS Type FET	Scan	PDF	242.69KB	6
2SK1915	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45

2SK191 Price and Stock

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Toshiba America Electronic Components 2SK1913
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK1913		880			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Hitachi Ltd 2SK1918S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK1918S		80		1	1 $35.10 10 $35.10 100 $29.70 1000 $29.70 10000 $29.70	Buy Now
Quest Components	2SK1918S		64			1 $38.02 10 $38.02 100 $33.64 1000 $33.64 10000 $33.64	Buy Now
Fuji Electric Co Ltd 2SK1917-MR POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 250V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK1917-MR		2,813			1 $7.50 10 $7.50 100 $7.50 1000 $2.75 10000 $2.63	Buy Now
Renesas Electronics Corporation 2SK1919L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK1919L		1,537			1 $3.27 10 $3.27 100 $3.27 1000 $1.80 10000 $1.64	Buy Now

2SK191 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK1011 Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211 Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M	OCR Scan	2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211	PDF
2SK1917 Abstract: SiC POWER MOSFET 2SK1917-M ups electrical symbols A2266 Contextual Info: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET ^ • Features SER IE S ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • Vc,s = ± 3 0 V G uarantee	OCR Scan	2SK1917-M 032tf SC-67 20Kil) 2SK1917 SiC POWER MOSFET ups electrical symbols A2266	PDF
2SK1918S Abstract: Hitachi DSA001652 Contextual Info: 2SK1918 L , 2SK1918(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter	Original	2SK1918 D-85622 2SK1918S Hitachi DSA001652	PDF
2sk1507 Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M	OCR Scan	2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2sk1507 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1013-01	PDF
Contextual Info: 2SK1918 L , 2SK1918(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter	OCR Scan	2SK1918 2SK1918Ã	PDF
Contextual Info: 2SK1911 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter	OCR Scan	2SK1911 D-85622	PDF
2SK1911 Abstract: da50 2SK191 Contextual Info: 2SK1911 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC	Original	2SK1911 220AB 2SK1911 da50 2SK191	PDF
2SK1919 Contextual Info: 2SK1919 L , 2SK1919(S) Silicon N-Channel MOS FET HITACHI Application H ig h sp e ed p o w e r s w itch in g Features • L o w o n -re sis tan ce • H ig h s p e ed sw itc h in g • L o w d riv e c u rre n t • 4 V gate d riv e d e v ic e can be d riven from 5 V sou rce	OCR Scan	2SK1919	PDF
Contextual Info: 2SK1918 L , 2SK1918(S) Silicon N-Channel MOS FET HITACHI Application H ig h s p eed p o w e r s w itch in g Features • L o w o n-resistan ce • H ig h speed s w itch in g • L o w d rive cu rren t • 4 V gate d riv e d e v ic e can be driv en from 5 V so urce	OCR Scan	2SK1918	PDF
2SK1917-M Contextual Info: 2SK1917-M SIPMOS FU JI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET ^ • Features SERIES ■ Outline Drawings • High speed sw itching • Low on-resistance • N o secondary breakdow n • Low driving pow er • High voltage • V gs = ± 3 0 V Guarantee	OCR Scan	2SK1917-M SC-67 20Kfi)	PDF
2SK1913 Abstract: BTB 600 BR BTb 600 Contextual Info: TOSHIBA Discrete Semiconductors 2SK1913 Field Effect Transistor Unit in mm Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON) = 0.9H (Typ.) • High Forward Transfer Admittance	OCR Scan	2SK1913 100jiA 20kii) D021LÃ BTB 600 BR BTb 600	PDF
2SK1012 Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M	OCR Scan	2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1012 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102	PDF
Contextual Info: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01	OCR Scan	2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01	PDF
Contextual Info: 2SK1911 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC	OCR Scan	2SK1911	PDF

2SK1910 Abstract: 3v1040 Contextual Info: 2SK1910 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC	Original	2SK1910 220AB 2SK1910 3v1040	PDF
2SK1917-M Abstract: 25N20 Contextual Info: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T ^ N-CHANNEL SILICON POWER MOS-FET • Features SER IE S ■ Outline Drawings • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving p ow er • High voltage • Vc,s = ± 3 0 V G uarantee	OCR Scan	2SK1917-M SC-67 20Kil) A2-268 25N20	PDF
CFL UPS 45 W Contextual Info: 2SK1917-MR FUJI POWER MOS-FET N-CNANNEL SILICON POWER MOS-FET F - I I • Features S E R I E S ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gs = ± 3 0 V Guarantee	OCR Scan	2SK1917-MR 20Kil) CFL UPS 45 W	PDF
2SK1101-01M Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01 Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01	OCR Scan	2SK1006-01M T0220F15 2SK1007-01 T0220 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01	PDF
2SK1913 Abstract: transister 2SK191 Contextual Info: TOSHIBA Discrete Semiconductors 2SK1913 Field Effect Transistor Unit in m m Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications F eatures • Low Drain-Source ON Resistance ' r d s (ON) = 0.9Q (Typ.) • High Forward Transfer Admittance	OCR Scan	2SK1913 100mA 20kii) 2SK1913 transister 2SK191	PDF
2SK1014-01 Abstract: 2SK151 Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01	OCR Scan	2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1014-01 2SK151	PDF
2SK1221-01 Contextual Info: COL L HE R S E M I C O N D U C T O R INC b3E D • 5 2 3 8 7^ 2 0 0 0 1 Ô7 1 541 « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvpe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01	OCR Scan	2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1222-01 2SK1015-01 2SK1916-01	PDF
V1660 Abstract: Hitachi DSA001652 Contextual Info: 2SK1911 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter	Original	2SK1911 O-220AB D-85622 V1660 Hitachi DSA001652	PDF
pf 312D Abstract: 2SK1916-01 equivalent Contextual Info: 2SK1916-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-H SERIES • Features ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakd ow n • Low driving p o w er • High voltage • V GS= ± 3 0 V G uarantee	OCR Scan	2SK1916-01 20Kfl) pf 312D 2SK1916-01 equivalent	PDF
2SK1917 Contextual Info: 2SK1917-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F-II SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee TO-220F15 Applications Switching regulators 2.54	Original	2SK1917-MR O-220F15 SC-67 2SK1917	PDF

2SK191 Search Results

2SK191 Datasheets (50)

2SK191 Price and Stock

Toshiba America Electronic Components 2SK1913

Hitachi Ltd 2SK1918S

Fuji Electric Co Ltd 2SK1917-MR

Renesas Electronics Corporation 2SK1919L

2SK191 Datasheets Context Search

2SK1011

2SK1917

2SK1918S

2sk1507

2SK1911

2SK1919

2SK1917-M

2SK1913

2SK1012

2SK1910

2SK1917-M

CFL UPS 45 W

2SK1101-01M

2SK1913

2SK1014-01

2SK1221-01

V1660

pf 312D

2SK1917