2SK193 Search Results

Contextual Info: 2SK1936-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

k1930

Abstract: 2SK1930
Contextual Info: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

it412

Contextual Info: TO SHIBA 2SK1930 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SII 5 2 S K 1 930 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S TO-22QFL U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

2SK1934

Contextual Info: 2SK1934 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Outline 2SK1934 Absolute Maximum Ratings Ta = 25 °C

2SK1938

Contextual Info: 2SK1938-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 Applications 5.45 ±0.2 5.45 ±0.2 Switching regulators UPS DC-DC converters General purpose power amplifier ±0.3 3.2 +0.3 ±0.3

A2272

Contextual Info: 2SK1936-01 FUJI P O W E R M O S - F E T N CHANNEL SILICON POWER IVIOS-FET F A P -IIA SERIES • Features Outline Drawings • High speed switching • -ow on-resistance • Mo secondary breakdown • .ow driving power • High voltage • ycs= ± 30V Guarantee

2SK1939

Abstract: 2SK1939-01 SC-65 T151 A2281
Contextual Info: 2SK1939-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance 03,2±O.l 45*0-2 • No secondary breakdown • Low driving power • High voltage Gate • V GS-=t30V Guarantee

Hitachi DSA002749

Contextual Info: 2SK1933 Silicon N-Channel MOS FET Nov. 1, 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain Flange

2SK1937-01

Contextual Info: 2SK1937-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators

k1930

Abstract: 2SK1930
Contextual Info: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)

HX 830

Abstract: 2SK1933 Hitachi DSA00398
Contextual Info: 2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain Flange 3. Source 2SK1933

2SK1931

Contextual Info: SHINDENGEN VR Series Power MOSFET 2SK1931 N-Channel Enhancement type OUTLINE DIMENSIONS F5E20 Case : E-pack (Unit : mm) 200V 5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters

2SK1931

Contextual Info: SHINDENGEN VR Series Power MOSFET 2SK1931 F5E20 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 200V 5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters

Contextual Info: 2SK1934 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • L ow o n -resistance • H igh speed sw itching • No secondary breakdow n • Suitable for Sw itching regulator Outline 1. Gate 2. Drain Flange 3. Source 700

2SK1395

Abstract: 2sk2006 2SK1539 2SK1685
Contextual Info: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695

2SK1930

Contextual Info: T O S H IB A 2SK1930 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S II 5 2 S K 1 930 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in m m TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE

2SK1934

Contextual Info: 2SK1934 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on–resistance High speed switching No secondary breakdown Suitable for Switching regulator 2 1 1 2 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings Ta = 25°C

2SK1937-01 equivalent

Abstract: 2SK1937
Contextual Info: 2SK1937-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,48Ω 15A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK1933

Abstract: K1933
Contextual Info: 2SK1933 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching N o secondary breakdown Suitable for Switching regulator Outline ‘i TO- G o1. Gate 2. Drain Flange 3. Source

2SK1934

Abstract: Hitachi DSA00395
Contextual Info: 2SK1934 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on–resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain Flange 3. Source

2SK1930

Contextual Info: 2SK1930 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II 5 2 S K 1 930 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS

2SK1930

Contextual Info: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)

2SK193

Abstract: transistor 2sk193 2sK193 transistor
Contextual Info: NEC N-CHANNEL JUNCTIO N FIELD-EFFECT TRANSISTOR ELECTRON DEVICE D ES C R IP T IO N 2SK193 T h e 2 S K 1 9 3 is designed fo r use in FM tu n e r o f a p o ta b le ra d io P A C K A G E D IM EN SIO N S receiver. in m illim ete rs FEA TU RES • H igh lyfslt

2SK1930

Contextual Info: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.)