2SK2121
Abstract: No abstract text available
Text: 2SK2121 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC
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2SK2121
2SK2121
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2SK2121
Abstract: Hitachi DSA001652
Text: 2SK2121 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter
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2SK2121
D-85622
2SK2121
Hitachi DSA001652
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2SK2121
Abstract: 2SK2203
Text: 2SK2203 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V cource • Suitable for Switching regulator, DC – DC
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2SK2203
2SK2121.
2SK2121
2SK2203
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2SK2225
Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Text: CONTENTS • Index. 4 ■ General Information.
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PM50150K
31Max
2SK2225
2sj150
2sk1058
2SK215 equivalent
2sk135 application note
2SK975 equivalent
2SK2416
2sk135 audio application
2SK135 audio amplifier
2SK2225 equivalent
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Hitachi DSA001652
Abstract: No abstract text available
Text: 2SK2203 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter
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2SK2203
D-85622
Hitachi DSA001652
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c9012
Abstract: C90-12 2SK2121
Text: 2SK2121 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter
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2SK2121
D-85622
c9012
C90-12
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Untitled
Abstract: No abstract text available
Text: 2SK2121 Si li con N Ch a nn el MOS FET Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC
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2SK2121
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Untitled
Abstract: No abstract text available
Text: 2SK2203 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V cource • Suitable for Switching regulator, DC - DC
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2SK2203
2SK2121.
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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2SK2728
Abstract: 2sk2729
Text: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SK741 2SK1667 2SK970 2SK2927 2SK971 2SK2928, 2SK2929
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2SK741
2SK970
2SK971
2SK972
2SK973
2SK974
2SK1093
2SK1094
2SK2728
2sk2729
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Untitled
Abstract: No abstract text available
Text: 2SK2203 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter
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2SK2203
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