2SK2573 Search Results

Contextual Info: Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm (2.0) ● Contactless relay ● Diving circuit for a solenoid

2SK2573

Contextual Info: Panasonic P o w er F -M O S FE T s 2SK2573 Tentative S ilic o n N - C h a n n e l P o w e r F - M O S • Features U nit : mm • Avalanche energy capability guaranteed • High-speed switching £ t • Low ON-resistance • No secondary breakdown 5X ■Applications

Contextual Info: 2SK2574 Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed 10.0 2.0 1.2 secondary breakdown ● Solenoid relay 2.0 4.0 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 equipment ● Switching 5.5±0.3

2SK2573

Contextual Info: Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm (2.0) ● Contactless relay ● Diving circuit for a solenoid

2SK2573

Contextual Info: Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 10.0 VDSS 500 V Gate to Source voltage VGSS ±30

Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2573 Tentative Silicon N-Channel Power F-MOS • Features Unit : mm • Avalanche energy capability guaranteed • High-speed switching • Low ON-resistance • No secondary breakdown 5X ■Applications • Non-contact relay

Contextual Info: Panasonic Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS U nit : m m • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown 5X ■Applications • • • • •

PD1001

Abstract: 2SK2573
Contextual Info: Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 10.0 VDSS 500 V Gate to Source voltage VGSS ±30

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030