2SK2689-01MR
Abstract: transconductance mosfet mosfet power amplifier power mosfet POWER MOSFET CIRCUIT POWER MOSFET DATA BOOK mosfet low vgs
Text: 2SK2689-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof TO-220F Applications Switching regulators DC-DC converters
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2SK2689-01MR
O-220F
2SK2689-01MR
transconductance mosfet
mosfet power amplifier
power mosfet
POWER MOSFET CIRCUIT
POWER MOSFET DATA BOOK
mosfet low vgs
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Untitled
Abstract: No abstract text available
Text: 2SK2689-01MR N-channel MOS-FET FAP-IIIB Series 30V > Features - 0,01Ω 50A 40W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters
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2SK2689-01MR
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2SK2689-01MR
Abstract: k 2750 MOSFET
Text: 2SK2689-01MR N-channel MOS-FET FAP-IIIB Series 30V > Features - 0,01Ω 50A 40W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters
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2SK2689-01MR
2SK2689-01MR
k 2750 MOSFET
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Untitled
Abstract: No abstract text available
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIIB シリーズ FAP-IIIB series 超低オン抵抗・高アバランシェ耐量 Low-on resistance 形 式 Device type Volts Amps. 5x2 Amps. RDS on Max. *1 Ohms (Ω) 7 60
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F8006N
F7007N
2SK2806-01
2SK2807-01L,
2SK2808-01MR
2SK2687-01
2SK2688-01L,
2SK2689-01MR
2SK3363-01
2SK2890-01MR
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2SK1969
Abstract: 2SK1508 2SK2691 2SK2690 2SJ477 2SK2906 TO-220F15 2SK1390 2SK1083 2SK1881
Text: POWER MOS FET Feb-00 Quick Selection Guide F-I series High speed switching F-II series FAP-II series High speed switching Avalanche rated FAP-IIA series Low-on resistance Low typical capacitance F-III series P channel Avalanche rated F-III series FAP-III series
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Feb-00
2SK2248
2SK2249
2SK2048
O-220F15
2SK2808
2SK2890
2SK2689
2SK2891
2SK2893
2SK1969
2SK1508
2SK2691
2SK2690
2SJ477
2SK2906
TO-220F15
2SK1390
2SK1083
2SK1881
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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2SK3474-01
2SK3537-01MR
2SK3554-01
2SK3555-01MR
2SK3556-01L,
2SK3535-01
2SK3514-01
2SK3515-01MR
2SK3516-01L,
2SK3517-01
F5022
f5017h
F5021H
f5016h
2sk3528
2sk2696
F5038H
2SK3102-01R
2SK2696-01MR
F5018
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2SK2687-01
Abstract: 2SK2688-01L 2SK2689-01MR 2SK2806-01 2SK2807-01L 2SK2808-01MR 2SK2890-01MR 2SK2892-01R 2SK3363-01 F7007N
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIIB シリーズ FAP-IIIB series 超低オン抵抗・高アバランシェ耐量 Low-on resistance 形 式 Device type F8006N F7007N 2SK2806-01 2SK2807-01L, S 2SK2808-01MR 2SK2687-01
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F8006N
F7007N
2SK2806-01
2SK2807-01L,
2SK2808-01MR
2SK2687-01
2SK2688-01L,
2SK2689-01MR
2SK3363-01
2SK2890-01MR
2SK2687-01
2SK2688-01L
2SK2689-01MR
2SK2806-01
2SK2807-01L
2SK2808-01MR
2SK2890-01MR
2SK2892-01R
2SK3363-01
F7007N
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2SK2689-01MR
Abstract: T0-220F
Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2689-01 MR SPEC. NO. : Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED _— /. Vo Y 0?57-R-004a 1.Scope This specifies Fuji Power MOSFET 2SK2689-01MR
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2SK2689-01MR
57-R-004a
2SK2689-01
T0-220F
0257-R-0Ã
0257-R-003a
0957-R
2SK2689-01MR
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220TQ
Abstract: No abstract text available
Text: MOSFETs FAP-IIIB Series - Logic Level Operation, Ultra Low R d s ON , High Avalanche Ruggedness 30 - 60 Volts Device Type 2SK2806-01 2SK2807-01L.S 2SK2808-01 MR 2SK2890-01 MR 2SK2687-01 2SK2688-01L.S 2SK2689-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 2SK2894-01R
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2SK2806-01
2SK2807-01L
2SK2808-01
2SK2890-01
2SK2687-01
2SK2688-01L
2SK2689-01MR
2SK2892-01R
2SK2891-01
2SK2893-01
220TQ
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2SK2689-01MR
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : P ow er M OSFET : 2SK2689-01 MR TYPE NAME SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED — / I/* .i . •~ Y n?57-R-004a 1.Scope
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2SK2689-01MR
57-R-004a
O-22QF
0957-R-TI
0257-R-Ã
2SK2689-01MR
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2sk2689-01mr
Abstract: B25A
Text: FUJI tS T O Q Q E 2SK2689-01 MR N-channel MOS-FET FAP-IIIB Series 30V > Features - 0 ,0 I Q 50A 40W Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier
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2SK2689-01
277mH,
2sk2689-01mr
B25A
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2689-01MR N-channel MOS-FET s t y M E i T U G a jK FAP-IIIB Series 30V > Features 50A 40W > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated T O -2 2 0 F 1 5 > Applications 2.7 3» £
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2SK2689-01MR
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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ci 740
Abstract: K1279 TO-220F15 K1969 2SK1822-01MR 2SK1823-01R 2SK2165-01 2SK2166-01R 2SK2259-01MR 2SK2687-01
Text: <s MOSFETs FAP-IIIA Series - Automotive Types, Logic Level Operation, Low R ds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type Maximum Ratinas Pd (W) V dss (V) Id (A) 2SK1822-01MR 2SK2165-01 2SK2166-01R 2SK2259-01MR 2ÖK1823-01R
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2SK1822-01MR
O-220F15
2SK2165-01
2SK2166-01R
2SK2259-01MR
2SK1823-01R
K1969-01
2SK1818MR
ci 740
K1279
TO-220F15
K1969
2SK2687-01
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-IIIA Series - Automotive Types, Logic Level Operation, Low R d s ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Maximum Ratinas I d (A ) Pd (W) Device Type Characteristics (Max.1 V dss (V ) 2SK1822-01 MR 2SK2165-01 2SK2166-01R
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2SK1822-01
2SK2165-01
2SK2166-01R
2SK225Ã
-01MR
2SK1823-01R
2SK1969-01
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION D E V IC E N A M E : P ow er M O S F E T T Y P E NAM E 2 S K 2 6 8 9 -0 1 MR S P E C . NO. : Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED NAME APPROVED Fuji Electric Co.,Ltd. Vo Y n?R7-R-004a
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2SK2689-01MR
R7-R-004a
2SK2689-01
O-22QF
0257-R
-003a
0257-R-003a
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