K2920
Abstract: 2SK2920
Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 z High forward transfer admittance : |Yfs| = 4.5 S (typ.) 5.5 ± 0.2 : RDS (ON) = 0.56 Ω (typ.)
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2SK2920
K2920
2SK2920
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k2920
Abstract: No abstract text available
Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance
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2SK2920
k2920
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k2920
Abstract: 2SK2920
Text: 2SK2920 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2920 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.56Ω (標準) z オン抵抗が低い。
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2SK2920
10VID
SC-64
K2920
2002/95/EC)
k2920
2SK2920
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K2920
Abstract: 2SK2920
Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance
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2SK2920
K2920
2SK2920
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K2920
Abstract: K292 2SK2920
Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance
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2SK2920
K2920
K292
2SK2920
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K2920
Abstract: transistor 625 2SK2920
Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.5 S (typ.)
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2SK2920
K2920
transistor 625
2SK2920
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K2920
Abstract: 2SK2920 K292
Text: 2SK2920 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2920 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.56Ω (標準) z オン抵抗が低い。
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2SK2920
10VID
K2920
2002/95/EC)
K2920
2SK2920
K292
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k2920
Abstract: toshiba marking code transistor TOSHIBA NOTE 2SK2920
Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance
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2SK2920
k2920
toshiba marking code transistor
TOSHIBA NOTE
2SK2920
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2SK2920
Abstract: No abstract text available
Text: 2SK2920 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2920 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) l High forward transfer admittance
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2SK2920
2SK2920
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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STP7NB40
STT3PF30L
STD20NE03L
STP60NE03L-12
STP60NE03L-10
STP40NF03L
STP80NE03L-06
STS4DPF30L
fqp60n06
spb32N03l
rfp60n06
SSH6N80
FQP50N10
FSD6680
STP55NF06 AND ITS EQUIVALENT
SFP70N03
HGTG*N60A4D
irf630 irf640
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MOSFET TOSHIBA 2SK2917
Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6
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DP0540004
MOSFET TOSHIBA 2SK2917
2sK2750 equivalent
2sk2997
2SK3759
2SJ618
2sk3067
2SK3767
2SK2842 equivalent
2SK2837 equivalent
2SK2843 equivalent
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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2SK4207
Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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BCJ0082B
BCJ0082A
2SK4207
to220sis
TPCA*8023
tk80A08K3
TPC8119
TK40A08K3
2SK4112
ssm3j16fs
2sk3568
TPC8A03
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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MMA6
Abstract: No abstract text available
Text: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm a 6 .8 M A X . APPLICATIONS
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2SK2920
MMA6
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2SK2920
Abstract: No abstract text available
Text: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4 V Gate Drive
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2SK2920
2SK2920
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source ON Resistance : Rjjs (ON) = 0.56 fl (Typ.)
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2SK2920
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A10q
Abstract: 2SK2920
Text: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2920 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive
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2SK2920
A10q
2SK2920
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2SK2920
Abstract: No abstract text available
Text: TOSHIBA 2SK2920 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4V Gate Drive
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2SK2920
10jus
2SK2920
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2920 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2920 HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER A N D MOTOR DRIVE APPLICATIONS 4V Gate Drive
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2SK2920
100/j
g--20kfl)
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