2SK295 Search Results

Contextual Info: TO SHIBA 2SK2953 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M O SV 2SK2953 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance

k2952

Abstract: 2SK2952
Contextual Info: 2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2952 Chopper Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 400 V)

Contextual Info: Ordering number : ENN6916 | _ N-Channel Silicon MOSFET 1 2SK2951 ISAflYO / Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. unit : mm 2062A

Hitachi DSA002749

Contextual Info: 2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564B Z 3rd. Edition June 1, 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–3P D G 1

2SK2958

Abstract: Hitachi DSA0044
Contextual Info: 2SK2958 L ,2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-568B (Z) 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 G 1 S 2 3 2

K2953

Abstract: 2SK2953
Contextual Info: 2SK2953 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2953 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.31 Ω (typ.) z High forward transfer admittance : |Yfs| = 15 S (typ.)

transistor 320v 1000A

Abstract: 2SK2952
Contextual Info: TO SH IBA 2SK2952 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2952 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR APPLICATIONS • • • • Low Drain-Source ON Resistance Rd s (ON) = 0.4 n (Typ.)

K2953

Abstract: 2SK2953
Contextual Info: 2SK2953 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2953 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.31Ω (標準) z オン抵抗が低い。

k2952

Contextual Info: 2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2952 Chopper Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 400 V)

Contextual Info: 2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2952 Chopper Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 400 V)

2SK2956-E

Abstract: 2SK2956 PRSS0003AE-A
Contextual Info: 2SK2956 Silicon N Channel MOS FET High Speed Power Switching REJ03G1056-0401 Previous: ADE-208-566B Rev.4.01 Apr 27, 2006 Features • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0003AE-A

Contextual Info: 2SK295 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30‚ Minimum Operating Temp (øC)

2SK2959

Abstract: Hitachi DSA00239
Contextual Info: 2SK2959 Silicon N Channel MOS FET High Speed Power Switching ADE-208-569C Z 4th. Edition Aug 1998 Features • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange

2SK2958

Abstract: Hitachi DSA00239
Contextual Info: 2SK2958 L ,2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-568B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 G 1 S 2 3 2 3

Contextual Info: 2SK2958 L ,2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-568B (Z) 3rd. Edition June 1, 1998 Features • Low on-resistance • = 5.5mi2 typ. 4V gate drive devices. • High speed switching R d s ( o„) Outline LDPAK 2SK2958(L),2SK2958(S)

2sk2955

Abstract: ADE-208-564 Hitachi DSA002780
Contextual Info: 2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2955 Absolute Maximum Ratings Ta = 25°C

2SK2953

Abstract: N10-y
Contextual Info: TO SH IBA 2SK2953 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2953 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm

567d

Abstract: 2SK2957 Hitachi DSA0044
Contextual Info: 2SK2957 L ,2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-567D (Z) 5th. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 G 1 S 2 3 2 3

*k2952

Abstract: 2SK2952
Contextual Info: TOSHIBA 2SK2952 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2952 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR APPLICATIONS • Low Drain-Source ON Resistance e d s (o n )= °-4 îî

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

Contextual Info: 2SK2959 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-569 Target specification 1st. Edition Features • Low on-resistance Ros.om = 7m i2 typ. • 4V gate drive devices. • High speed switching Outline TO -220A B 3 1262 1. Gate 2. Drain Flange

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

2SK2955

Abstract: Hitachi DSA00239
Contextual Info: 2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–3P D G 1 S 2

2SK2953

Contextual Info: TOSHIBA 2SK2953 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2953 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Sorce ON Resistance