2SK308 Search Results

MJ10050

Abstract: 2SK3085 K3085 2-10P1B k308
Contextual Info: 2SK3085 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3085 ○ レギュレータDC-DC コンバータ、モータドライブ用 特 • 単位: mm 長 : RDS (ON) = 1.7 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 3.0 S (標準)

k3089

Abstract: 2SK3089 40IDP
Contextual Info: 2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3089 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.)

Hitachi DSA00276

Contextual Info: 2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange)

2SK308

Abstract: D1302 D1302T Hitachi Scans-001 2SK30A 11X1 15V1 st 25 c
Contextual Info: MM'ìbEOS Ü013D57 17T • H I T M 2SK308 HITACHI/«OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.

A1585

Abstract: 2-10P1B 2SK3085 K3085
Contextual Info: 2SK3085 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.)

Contextual Info: 2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3089 Chopper Regulator DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) z High forward transfer admittance : |Yfs| = 20 S (typ.)

K3089

Abstract: 2SK3089 EAR-5 k308
Contextual Info: 2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3089 Chopper Regulator DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) z High forward transfer admittance : |Yfs| = 20 S (typ.)

2SK3081

Abstract: Hitachi DSA00239
Contextual Info: 2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange)

k3085

Abstract: 2-10P1B 2SK3085
Contextual Info: 2SK3085 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.)

Contextual Info: 2SK3084 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS 2SK3084 Chopper Regulator DC−DC Converter, and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 40 mΩ (typ.) z High forward transfer admittance

Hitachi DSA002759

Contextual Info: 2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A Z 2nd. Edition May 1998 Features • Low on-resistance R DS(on) = 20 mΩ typ. (V GS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1

Hitachi DSA00276

Contextual Info: 2SK3082 L ,2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637A (Z) 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

2SK3084

Contextual Info: 2SK3084 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS 2SK3084 Chopper Regulator DC−DC Converter, and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 40 mΩ (typ.) High forward transfer admittance

2-10P1B

Abstract: 2SK3085 K3085
Contextual Info: 2SK3085 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.)

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

2SK3084

Contextual Info: TO SH IBA 2SK3084 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOS 2SK3084 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TO-220FL 10.3MAX.

Contextual Info: TOSHIBA 2SK3089 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SVI 2SK3089 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL 10.3MAX APPLICATIONS

2-10P1B

Abstract: 2SK3085 K3085
Contextual Info: 2SK3085 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.)

2SK3082

Abstract: Hitachi DSA00239
Contextual Info: 2SK3082 L ,2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

2SK3081

Abstract: 2SK3081-E PRSS0004AC-A
Contextual Info: 2SK3081 Silicon N Channel MOS FET High Speed Power Switching REJ03G1064-0400 Previous: ADE-208-636A Rev.4.00 Sep 07,2005 Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AC-A

Hitachi DSA00276

Contextual Info: 2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1

2sk4005

Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321

Hitachi DSA002759

Contextual Info: 2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange)