2SK322 Search Results

Contextual Info: IC Transistors SMD Type Product specification 2SK3224 TO-252 +0.2 9.70-0.2 Low Ciss : Ciss = 790 pF TYP. Built-in Gate Protection Diode +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 +0.8 0.50-0.7 3.80 MAX. VGS = 4.0 V, ID = 10 A Unit: mm +0.1 2.30-0.1 +0.15 5.55-0.15

d1379

Abstract: 2SK3225
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T his p ro d u ct is N -C hannel M O S Field E ffe ct T ra n sisto r PA R T N U M B E R PACKAGE 2S K 3 2 2 4 TO-251 2 S K 3 2 2 4 -Z

ac 1501

Abstract: nec 502 2SK3224 transistor k 790
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3224 is N-Channel MOS Field Effect Transistor designed for Package Drawings Unit : mm high current switching applications.

2SK3225

Abstract: D1379
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3225 is N-Channel MOS Field Effect Transistor designed for Package Drawings Unit : mm high current switching applications.

2SK3224

Abstract: 2SK3224-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3224 TO-251 2SK3224-Z TO-252 designed for high current switching applications.

D1378

Abstract: 2SK3211 2SK3221
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3221 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3211 Isolated TO-220 low gate charge and excellent switching characteristics, and

2SK3221

Abstract: nec 2501
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3221 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3221 is N channel DMOS FET device that features a low gate charge and excellent switching characteristics, and

2SK3228

Abstract: 2SK3228-E PRSS0004AC-A
Contextual Info: 2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS on = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A

d1379

Abstract: 2SK3224 2SK3224-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3224 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3224 TO-251 MP-3 2SK3224-Z TO-252 (MP-3Z) designed for high current switching applications.

fet to251

Abstract: 2SK3225 d1379 2SK3225-Z A1827
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistors 2SK3225 N チャネル パワーMOS FET スイッチング用 2SK3225 は N チャネル縦型 MOS FET でオン抵抗特性が優れており，スイッチング電源に適しています。

2SK3225

Abstract: NS140
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3225 TO-252 Low Ciss : Ciss = 2100 pF TYP. +0.1 0.80-0.1 Built-in Gate Protection Diode 2.3 +0.1 0.60-0.1 3.80 MAX. VGS = 4.0 V, ID = 17 A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 27 m Unit: mm +0.1 2.30-0.1

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE

Hitachi DSA00276

Contextual Info: 2SK3229 Silicon N Channel MOS FET High Speed Power Switching ADE-208-766 Z Target specification 1st. Edition Dec. 1998 Features • Low on-resistance R DS(on) = 6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline

765A

Abstract: TA 765A 2SK3228 Hitachi DSA00239
Contextual Info: 2SK3228 Silicon N Channel MOS FET High Speed Power Switching ADE-208-765A Z Target specification 2nd. Edition December 1998 Features • Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline

Contextual Info: MOSFET IC Transistors SMD Type Product specification 2SK3225 TO-252 Low Ciss : Ciss = 2100 pF TYP. +0.1 0.80-0.1 Built-in Gate Protection Diode 2.3 +0.1 0.60-0.1 3.80 MAX. VGS = 4.0 V, ID = 17 A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 27 m Unit: mm +0.1

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3225 TO-251 2SK3225-Z TO-252 designed for high current switching applications.

Contextual Info: HITACHI 2SK322 SILICON N-CHANNEL JUNCTION FET H F W ID E B A N D A M P L IF IE R .lit ó » ,-: y ; 0.95 i • } Si'v-CC t'i > , ~l M P A K ■ A BSO LU TE MAXIMUM RATINGS < T W 5 T ) hem Symbol; Gate to drain voltage MAXIMUM CHANNEL POWER DISSIPATION CURVE

2SK3228

Abstract: 2SK3228-E PRSS0004AC-A
Contextual Info: 2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0300 Previous: ADE-208-765A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

2SK3224

Abstract: 2SK3224-Z transistor k 790
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE

d1379

Abstract: 2SK3225 2SK3225-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3225 TO-251 2SK3225-Z TO-252 designed for high current switching applications.

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3221 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION T he 2SK 3221 is N cha nn el D M O S FET de vice th a t fea tu res a lo w gate cha rge and e xce lle n t sw itch ing cha racteristics, and

Contextual Info: 2SK322 Silicon N-Channel Junction FET HITACHI Application H F w id e band am plifier Outline MPAK 4P 2 1030 2 - Source 3. Gate 2SK322 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Gate to drain voltage V gdo -1 5 V Gate to source voltage

d1379

Abstract: 2SK3225 2SK3225-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistors PART NUMBER designed for high current switching applications. FEATURES PACKAGE 2SK3225 TO-251 MP-3