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    2SK322 Search Results

    2SK322 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3221-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-45F, /Bag Visit Renesas Electronics Corporation
    2SK3225-Z-AZ Renesas Electronics Corporation Switching N Channel MOSFET, MP-3Z, /Bag Visit Renesas Electronics Corporation
    2SK3225-Z-E1-AZ Renesas Electronics Corporation Switching N Channel MOSFET Visit Renesas Electronics Corporation
    2SK3224-Z-E1-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3228-E Renesas Electronics Corporation Nch Single Power Mosfet 80V 75A 7.5Mohm To-220Ab Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SK322 Price and Stock

    Rochester Electronics LLC 2SK3229-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3229-E Bulk 56
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    • 100 $5.37
    • 1000 $5.37
    • 10000 $5.37
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    Rochester Electronics LLC 2SK3221-AZ

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3221-AZ Bulk 163
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    • 1000 $1.85
    • 10000 $1.85
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    Rochester Electronics LLC 2SK3225-Z-AZ

    SMALL SIGNAL N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3225-Z-AZ Bulk 185
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    • 1000 $1.62
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    Renesas Electronics Corporation 2SK3229(E)

    Trans MOSFET N-CH Si 80V 60A 3-Pin(3+Tab) TO-220CFM Magazine
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK3229(E) 10,156 60
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    • 100 $6.0625
    • 1000 $5.4875
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    2SK3229(E) 1,732 60
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    • 100 $6.0625
    • 1000 $5.4875
    • 10000 $5.4875
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    Renesas Electronics Corporation 2SK3221-AZ

    2SK3221 - Power Field-Effect Transistor, 2A, 600V, 4.4, N-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK3221-AZ 17,154 1
    • 1 $1.78
    • 10 $1.78
    • 100 $1.67
    • 1000 $1.51
    • 10000 $1.51
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    2SK322 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK322 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK322 Unknown FET Data Book Scan PDF
    2SK3221 NEC MOS Field Effect Transistor Original PDF
    2SK3221 NEC Semiconductor Selection Guide Original PDF
    2SK3221 NEC Switching N-Channel Power MOS FET Original PDF
    2SK3224 Kexin N-Channel MOSFET Original PDF
    2SK3224 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3224 NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3224 TY Semiconductor N-Channel MOSFET - TO-252 Original PDF
    2SK3224-Z NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3224-Z NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3225 Kexin N-Channel MOSFET Original PDF
    2SK3225 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3225 TY Semiconductor N-Channel MOSFET - TO-252 Original PDF
    2SK3225-Z NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3225-Z NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3228 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3228 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3228 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3228-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK322 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IC Transistors SMD Type Product specification 2SK3224 TO-252 +0.2 9.70-0.2 Low Ciss : Ciss = 790 pF TYP. Built-in Gate Protection Diode +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 +0.8 0.50-0.7 3.80 MAX. VGS = 4.0 V, ID = 10 A Unit: mm +0.1 2.30-0.1 +0.15 5.55-0.15


    Original
    PDF 2SK3224 O-252

    d1379

    Abstract: 2SK3225
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE


    Original
    PDF 2SK3225 2SK3225 O-251 2SK3225-Z O-252 O-251/TO-252 O-251) d1379

    ac 1501

    Abstract: nec 502 2SK3224 transistor k 790
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3224 is N-Channel MOS Field Effect Transistor designed for Package Drawings Unit : mm high current switching applications.


    Original
    PDF 2SK3224 2SK3224 O-251/TO-252 ac 1501 nec 502 transistor k 790

    2SK3225

    Abstract: D1379
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3225 is N-Channel MOS Field Effect Transistor designed for Package Drawings Unit : mm high current switching applications.


    Original
    PDF 2SK3225 2SK3225 O-251/TO-252 D1379

    2SK3224

    Abstract: 2SK3224-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3224 TO-251 2SK3224-Z TO-252 designed for high current switching applications.


    Original
    PDF 2SK3224 2SK3224 O-251 2SK3224-Z O-252 O-251/TO-252 O-251) O-252) 2SK3224-Z

    D1378

    Abstract: 2SK3211 2SK3221
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3221 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3211 Isolated TO-220 low gate charge and excellent switching characteristics, and


    Original
    PDF 2SK3221 2SK3221 2SK3211 O-220 O-220 D1378 2SK3211

    2SK3221

    Abstract: nec 2501
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3221 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3221 is N channel DMOS FET device that features a low gate charge and excellent switching characteristics, and


    Original
    PDF 2SK3221 2SK3221 O-220 O-220 nec 2501

    2SK3228

    Abstract: 2SK3228-E PRSS0004AC-A
    Text: 2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS on = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A


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    PDF 2SK3228 REJ03G1094-0400 PRSS0004AC-A O-220AB) 2SK3228 2SK3228-E PRSS0004AC-A

    d1379

    Abstract: 2SK3224 2SK3224-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3224 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3224 TO-251 MP-3 2SK3224-Z TO-252 (MP-3Z) designed for high current switching applications.


    Original
    PDF 2SK3224 2SK3224 O-251 2SK3224-Z O-252 O-251/TO-252 O-251) d1379 2SK3224-Z

    fet to251

    Abstract: 2SK3225 d1379 2SK3225-Z A1827
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistors 2SK3225 N チャネル パワーMOS FET スイッチング用 2SK3225 は N チャネル縦型 MOS FET でオン抵抗特性が優れており,スイッチング電源に適しています。


    Original
    PDF 2SK3225 O-251 2SK3225-Z O-252 O-251) O-251, D13798JJ5V0DS fet to251 2SK3225 d1379 2SK3225-Z A1827

    2SK3225

    Abstract: NS140
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3225 TO-252 Low Ciss : Ciss = 2100 pF TYP. +0.1 0.80-0.1 Built-in Gate Protection Diode 2.3 +0.1 0.60-0.1 3.80 MAX. VGS = 4.0 V, ID = 17 A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 27 m Unit: mm +0.1 2.30-0.1


    Original
    PDF 2SK3225 O-252 2SK3225 NS140

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK3229 Silicon N Channel MOS FET High Speed Power Switching ADE-208-766 Z Target specification 1st. Edition Dec. 1998 Features • Low on-resistance R DS(on) = 6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline


    Original
    PDF 2SK3229 ADE-208-766 220CFM D-85622 Hitachi DSA00276

    2SK3223

    Abstract: Hitachi DSA002759 2SK322
    Text: 2SK322 Silicon N-Channel Junction FET Application HF wide band amplifier Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Gate to drain voltage VGDO –15 V Gate to source voltage VGSO –15 V Drain current ID 50 mA Gate current IG 5


    Original
    PDF 2SK322 2SK3223 Hitachi DSA002759 2SK322

    765A

    Abstract: TA 765A 2SK3228 Hitachi DSA00239
    Text: 2SK3228 Silicon N Channel MOS FET High Speed Power Switching ADE-208-765A Z Target specification 2nd. Edition December 1998 Features • Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline


    Original
    PDF 2SK3228 ADE-208-765A 220AB 765A TA 765A 2SK3228 Hitachi DSA00239

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3225 TO-251 2SK3225-Z TO-252 designed for high current switching applications.


    Original
    PDF 2SK3225 2SK3225 2SK3225-Z O-251 O-252 O-251/TO-252 O-251)

    2SK3228

    Abstract: 2SK3228-E PRSS0004AC-A
    Text: 2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0300 Previous: ADE-208-765A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source


    Original
    PDF 2SK3228 REJ03G1094-0300 ADE-208-765A) PRSS0004AC-A O-220AB) 2SK3228 2SK3228-E PRSS0004AC-A

    2SK3224

    Abstract: 2SK3224-Z transistor k 790
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE


    Original
    PDF 2SK3224 O-251 2SK3224-Z O-252 O-251/TO-252 2SK3224 2SK3224-Z transistor k 790

    d1379

    Abstract: 2SK3225 2SK3225-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3225 TO-251 2SK3225-Z TO-252 designed for high current switching applications.


    Original
    PDF 2SK3225 2SK3225 O-251 2SK3225-Z O-252 O-251/TO-252 O-251) d1379 2SK3225-Z

    d1379

    Abstract: 2SK3225 2SK3225-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistors PART NUMBER designed for high current switching applications. FEATURES PACKAGE 2SK3225 TO-251 MP-3


    Original
    PDF 2SK3225 2SK3225 2SK3225-Z O-251 O-252 O-251) O-251/TO-252 d1379 2SK3225-Z

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T his p ro d u ct is N -C hannel M O S Field E ffe ct T ra n sisto r PA R T N U M B E R PACKAGE 2S K 3 2 2 4 TO-251 2 S K 3 2 2 4 -Z


    OCR Scan
    PDF 2SK3224 O-251 D13797EJ1V0DS00

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE


    OCR Scan
    PDF 2SK3225 O-251 2SK3225-Z O-252 O-251/TO-252 DD13798EJ1V0DS00

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SK322 SILICON N-CHANNEL JUNCTION FET H F W ID E B A N D A M P L IF IE R .lit ó » ,-: y ; 0.95 i • } Si'v-CC t'i > , ~l M P A K ■ A BSO LU TE MAXIMUM RATINGS < T W 5 T ) hem Symbol; Gate to drain voltage MAXIMUM CHANNEL POWER DISSIPATION CURVE


    OCR Scan
    PDF 2SK322 2SK322

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3221 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION T he 2SK 3221 is N cha nn el D M O S FET de vice th a t fea tu res a lo w gate cha rge and e xce lle n t sw itch ing cha racteristics, and


    OCR Scan
    PDF 2SK3221 P-45F)

    Untitled

    Abstract: No abstract text available
    Text: 2SK322 Silicon N-Channel Junction FET HITACHI Application H F w id e band am plifier Outline MPAK 4P 2 1030 2 - Source 3. Gate 2SK322 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Gate to drain voltage V gdo -1 5 V Gate to source voltage


    OCR Scan
    PDF 2SK322