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    2SK3681 Search Results

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    2SK3681 Price and Stock

    Fuji Electric Co Ltd 2SK3681-01

    MOSFET, Power, N-Ch, VDSS 600V, RDS(ON) 0.12Ohm, ID +/-43A, TO-247,PD 600W, VGS +/-30V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 2SK3681-01 Bulk 152 3 Weeks 1
    • 1 $4.08
    • 10 $4.08
    • 100 $4.08
    • 1000 $4.08
    • 10000 $4.08
    		Buy Now

    2SK3681 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    2SK3681-01
    		Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF 118.85KB 4
    2SK3681-01
    		Fuji Electric Power Amplifier, 600V 43A 600W, MOS-FET N-Channel enhanced Original PDF 285.7KB 19

    2SK3681 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK3681-01

    Abstract: 2SK3681-01 equivalent
    Contextual Info: 2SK3681-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		2SK3681-01 2SK3681-01 2SK3681-01 equivalent PDF

    2SK3681-01

    Contextual Info: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3681-01 600V/0.16Ω/43A 1) Package TO-247 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,


    Original     		2SK3681-01 00V/0 16/43A) O-247 25unless Tch150 MT5F12592 2SK3681-01 PDF

    2SK3681-01

    Abstract: 2SK3681-01 equivalent
    Contextual Info: 2SK3681-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		2SK3681-01 2SK3681-01 2SK3681-01 equivalent PDF

    2SK3681-01

    Abstract: 2sk3681 2SK3681-01 equivalent
    Contextual Info: 2SK3681-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators


    Original     		2SK3681-01 2SK3681-01 2sk3681 2SK3681-01 equivalent PDF

    2SK3681-01

    Abstract: 2SK3681-01 equivalent 43a DIODE
    Contextual Info: DATE CHECKED Apr.-04-'03 CHECKED Apr.-04-'03 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without


    Original     		2SK3681-01 MS5F5421 H04-004-05 H04-004-03 2SK3681-01 2SK3681-01 equivalent 43a DIODE PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 PDF

    2SK3679

    Abstract: 2sk3598 2SK3599-01MR 2SK3677-01MR 2sk3680-01 2sk3580-01mr 2sk3603 2SK3532 2SK3469-01MR 2SK3532-01MR
    Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse RDS (on) PD ＊2 Max. ＊1


    Original     		2SK3598-01 2SK3599-01MR 2SK3600-01L, 2SK3601-01 2SK3644-01 2SK3645-01MR 2SK3646-01L, 2SK3647-01 2SK3586-01 2SK3587-01MR 2SK3679 2sk3598 2SK3677-01MR 2sk3680-01 2sk3580-01mr 2sk3603 2SK3532 2SK3469-01MR 2SK3532-01MR PDF

    2SK4111

    Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
    Contextual Info: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original     		2SK258 O-204AA/TO-3 2SK259 2SK258H O-218 2SK695 2SK695A 2SK4111 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666 PDF