2SK379 Search Results

Contextual Info: MOSFET IC SMD Type Product specification 2SK3794 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low On-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25

K3797

Abstract: 2SK3797 2SK3797 equivalent
Contextual Info: 2SK3797 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3797 ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.32 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.5 S (標準)

k3797

Abstract: K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B
Contextual Info: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)

D1677

Abstract: 2SK3794-Z 2SK3794
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3794 TO-251 MP-3

K3797

Abstract: K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q)
Contextual Info: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)

K3797 Transistor

Abstract: K3797 2SK3797 54V4 transistor k3797 K379
Contextual Info: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)

K3799

Abstract: 2sk3799 K379
Contextual Info: 2SK3799 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK3799 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)

k3798

Abstract: 2SK3798 K379
Contextual Info: 2SK3798 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3798 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.8 S (標準)

Contextual Info: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

k3799

Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)

2SK3796

Abstract: ITR00633 ITR00634 ITR00635 ITR00636 ITR00637 ITR00638 ITR00639 ITR00640
Contextual Info: 2SK3796 注文コード No. N 8 6 3 6 三洋半導体データシート N 2SK3796 N チャネル接合型シリコン電界効果トランジスタ 低周波一般増幅用 , インピーダンス変換用 用途 ・低周波一般増幅インピーダンス変換用、アナログスイッチ用。

2SK3796

Contextual Info: 2SK3796 Ordering number : EN8636A SANYO Semiconductors DATA SHEET N-Channel Junctin Silicon FET 2SK3796 Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applications • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications

2SK3796

Contextual Info: 2SK3796 Ordering number : EN8636 SANYO Semiconductors DATA SHEET 2SK3796 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applicatins • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications.

k3798

Abstract: 2SK3798
Contextual Info: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.)

SMD transistor Mu

Abstract: smd mu diode smd transistor ISS smd diode Mu smd MU 78 DIODE SMD 2SK3794 mu diode SMD Transistor m.u DIODE SMD 10A
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3794 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low On-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max

k3798

Abstract: 2SK3798 equivalent 2SK3798 K379
Contextual Info: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

K3799

Abstract: 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379
Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V)

k3799

Abstract: K3799 Transistor
Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3799 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.0Ω (typ.) High forward transfer admittance: |Yfs| = 7.0S (typ.)

K3799

Abstract: transistor 2SK3799 K3799 Transistor 2SK3799
Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.0 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 720 V)

D1677

Abstract: 2SK3794 2SK3794-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3794 TO-251 MP-3

2SK3796

Contextual Info: Ordering number : EN8636B 2SK3796 N-Channel JFET http://onsemi.com 30V, 0.6 to 3.0mA, 6.5mS, SMCP Applications • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications Features • Small IGSS • Small Ciss Specifications

D1677

Abstract: 2SK3794 2SK3794-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3794 TO-251 2SK3794-Z

k3797

Abstract: K3797 Transistor K379 2SK3797
Contextual Info: 2SK3797 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3797 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: Low leakage current: IDSS = 100 A (VDS = 600 V)

Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)