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    K379 Search Results

    K379 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    K 37 90
    		Gedore Torque IMPACT SOCKET 1.1/2"" 90 MM Original PDF 6.54MB
    K 37 95
    		Gedore Torque IMPACT SOCKET 1.1/2"" 95 MM Original PDF 6.54MB
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    K379 Price and Stock

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    Power Integrations LNK3792D-H006-TL

    IC OFFLINE SWITCH FLBACK 16-SO B
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    DigiKey LNK3792D-H006-TL Bulk 2,500 1
    • 1 $1.65
    • 10 $1.65
    • 100 $1.12
    • 1000 $0.92
    • 10000 $0.78
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    Avnet Americas LNK3792D-H006-TL Reel 111 Weeks 2,500
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    • 10000 $0.68
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    Mouser Electronics LNK3792D-H006-TL
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    EBV Elektronik LNK3792D-H006-TL 22 Weeks 2,500
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    Power Integrations LNK3792D-H004-TL

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    DigiKey LNK3792D-H004-TL Bulk 2,495 1
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    Avnet Americas LNK3792D-H004-TL Reel 111 Weeks 2,500
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    Mouser Electronics LNK3792D-H004-TL
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    EBV Elektronik LNK3792D-H004-TL 22 Weeks 2,500
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    Power Integrations LNK3792D-H003-TL

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    DigiKey LNK3792D-H003-TL Bulk 2,485 1
    • 1 $1.65
    • 10 $1.65
    • 100 $1.12
    • 1000 $0.92
    • 10000 $0.78
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    Avnet Americas LNK3792D-H003-TL Reel 111 Weeks 2,500
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    Mouser Electronics LNK3792D-H003-TL
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    EBV Elektronik LNK3792D-H003-TL 20 Weeks 2,500
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    TE Connectivity HK379T-000

    ALR-7060-VPS
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    DigiKey HK379T-000 Box 982 1
    • 1 $17.26
    • 10 $13.70
    • 100 $11.63
    • 1000 $11.54
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    Avnet Americas HK379T-000 Bulk 14 Weeks, 5 Days 100
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    • 1000 $8.56
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    Mouser Electronics HK379T-000
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    • 100 $12.15
    • 1000 $11.54
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    RS HK379T-000 Bulk 990 5 Weeks 1
    • 1 $17.43
    • 10 $16.04
    • 100 $14.82
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    Interstate Connecting Components HK379T-000
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    Avnet Abacus HK379T-000 113 Weeks 100
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    Master Electronics () HK379T-000 4
    • 1 $18.77
    • 10 $16.19
    • 100 $14.66
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    HK379T-000
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    Sager HK379T-000 100
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    • 100 $12.83
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    NMB Technologies Corporation 29SM-K379-00V

    STEP MOTOR HYBRID UNIPOLAR 24V
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    DigiKey 29SM-K379-00V Bulk 12 1
    • 1 $93.73
    • 10 $83.06
    • 100 $83.06
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    Mouser Electronics 29SM-K379-00V
    • 1 $87.14
    • 10 $84.09
    • 100 $79.50
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    Newark 29SM-K379-00V Bulk 10
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    • 10 $99.67
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    Sager 29SM-K379-00V 1
    • 1 $99.28
    • 10 $90.39
    • 100 $79.68
    • 1000 $79.68
    • 10000 $79.68
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    Find more K379 price and stock on Findchips.com

    K379 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K3797

    Abstract: 2SK3797 2SK3797 equivalent
    Contextual Info: K3797 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3797 ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.32 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.5 S (標準)


    Original     		2SK3797 SC-67 2-10U1B K3797 2SK3797 2SK3797 equivalent PDF

    k3797

    Abstract: K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B
    Contextual Info: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		2SK3797 k3797 K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B PDF

    K3797

    Abstract: K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q)
    Contextual Info: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		2SK3797 K3797 K3797 Transistor 2sk3797 equivalent 2SK3797 600VTH 2SK3797(Q) PDF

    k3639

    Abstract: K379 K3793 ECKN
    Contextual Info: Thte document ti ttw w p m i a Corporation CUSTOMER DRAWING Amphand Corporation and b doltamd on ‘ to b * dlMloNd. rapreduood or uMd, In ar M l* bv anyofi* ottitr than Amphenol ngM I* granted to alodooo 4,60+0,04 1 "1 C? Iu REV ISIO N S SYM ECKN DESCRIPTION


    OCR Scan     		K3639 K3793 BBF16002N BBF16002N K379 ECKN PDF

    K3797 Transistor

    Abstract: K3797 2SK3797 54V4 transistor k3797 K379
    Contextual Info: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		2SK3797 K3797 Transistor K3797 2SK3797 54V4 transistor k3797 K379 PDF

    K3799

    Abstract: 2sk3799 K379
    Contextual Info: K3799 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ K3799 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)


    Original     		2SK3799 SC-67 2-10U1B K3799 2sk3799 K379 PDF

    k3798

    Abstract: 2SK3798 K379
    Contextual Info: K3798 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3798 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.8 S (標準)


    Original     		2SK3798 SC-67 2-10U1B k3798 2SK3798 K379 PDF

    Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3798 PDF

    k3799

    Contextual Info: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 k3799 PDF

    k3798

    Abstract: 2SK3798
    Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.)


    Original     		2SK3798 k3798 2SK3798 PDF

    K3799

    Abstract: 2sk3799
    Contextual Info: K3799 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ K3799 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)


    Original     		2SK3799 SC-67 2-10U1B K3799 2sk3799 PDF

    k3798

    Abstract: 2SK3798 equivalent 2SK3798 K379
    Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3798 k3798 2SK3798 equivalent 2SK3798 K379 PDF

    K3799

    Abstract: 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379
    Contextual Info: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 K3799 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379 PDF

    k3799

    Abstract: K3799 Transistor
    Contextual Info: K3799 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3799 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.0Ω (typ.) High forward transfer admittance: |Yfs| = 7.0S (typ.)


    Original     		2SK3799 k3799 K3799 Transistor PDF

    D836A

    Abstract: k1606 B948A K 1833 N6015 D856A K753 K379 K749A b941a
    Contextual Info: Maintenance Types • M aintenance Types • M O S LSIs T y p e No. A lte r n a tiv e _ M N 158455 - M N 40174B /S A lt e r n a t i v e _ M N 1204B - M N 158481 — M N 40175B /S _ M N 50003 M N 1215P - M N 158482 - M N 4018B/S _ M N 50007 M N 1215 - MN 158483


    OCR Scan     		MN115P 1204B 1215P MN1221 1227B 1237/A 1277B MN1281 MN12811 MN12821 D836A k1606 B948A K 1833 N6015 D856A K753 K379 K749A b941a PDF

    k3797

    Abstract: K3797 Transistor K379 2SK3797
    Contextual Info: K3797 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3797 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3797 k3797 K3797 Transistor K379 2SK3797 PDF

    Contextual Info: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 PDF

    Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3798 PDF

    K3799

    Abstract: 2sk3799 2SK3799 equivalent transistor 2SK3799
    Contextual Info: K3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		2SK3799 K3799 2sk3799 2SK3799 equivalent transistor 2SK3799 PDF

    k3797

    Abstract: K3797 Transistor
    Contextual Info: K3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)


    Original     		2SK3797 k3797 K3797 Transistor PDF

    k3798

    Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3798 k3798 PDF

    545 voltsensor

    Abstract: HYS3o
    Contextual Info: Models 545 and 546 Features • Dual Set-Point High and Low ■ Triple Output (HI, GO, LO) High Level Output (100 mA) . ■ Versatile Input Amplifier Differential Input Pin-Selectable Ranges High Input Impedance ■ Variable Hysteresis ■ Latching Capability


    OCR Scan     		MK378 MK379 r2401 000157b 545 voltsensor HYS3o PDF

    k3798

    Contextual Info: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3798 k3798 PDF

    k3797

    Abstract: 2SK3797
    Contextual Info: K3797 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3797 ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.32 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.5 S (標準)


    Original     		2SK3797 SC-67 2-10U1B k3797 2SK3797 PDF