2SK387 Search Results

2SK387 Datasheets (24)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK387	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK387	Toshiba		Original	PDF	44.05KB	9
2SK387	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	123.53KB	1
2SK387	Unknown	FET Data Book	Scan	PDF	96.25KB	2
2SK387	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	86.52KB	1
2SK387	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	58.42KB	1
2SK387	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	63.92KB	1
2SK3870-01	Fuji Electric	N-channel Silicon Power Mosfet	Original	PDF	94.96KB	4
2SK387/1	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	86.52KB	1
2SK3871-01MR	Fuji Electric	N-channel Silicon Power Mosfet	Original	PDF	95.98KB	4
2SK387/2	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	86.52KB	1
2SK3872-01L	Fuji Electric	N-Channel Silicon Power MOSFET, Super FAP-G Series	Original	PDF	251.76KB	4
2SK3872-01S	Fuji Electric	N-Channel Silicon Power MOSFET, Super FAP-G Series	Original	PDF	251.76KB	4
2SK3872-01SJ	Fuji Electric	N-Channel Silicon Power MOSFET, Super FAP-G Series	Original	PDF	251.76KB	4

2SK387/3	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	86.52KB	1
2SK387/4	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	86.52KB	1
2SK387/5	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	86.52KB	1
2SK3875-01	Fuji Electric	Power MOSFET / Super FAP-G Series	Original	PDF	102.16KB	4
2SK387/6	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	86.52KB	1
2SK3876-01R	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF	100.13KB	4

2SK387 Price and Stock

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Toshiba America Electronic Components 2SK3878(F) Mosfet, N Channel, 900V, 9A, Sc-65; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes \|Toshiba 2SK3878(F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	2SK3878(F)	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	2SK3878(F)		26			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fuji Electric Co Ltd 2SK3875-01 MOSFET, Power, N-Ch, VDSS 900V, RDS(ON) 0.79Ohm, ID 13A, TO-247,PD 355W, VGS +/-30V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	2SK3875-01	Bulk			500	1 - 10 - 100 - 1000 $3.05 10000 $2.59	Get Quote
Toshiba America Electronic Components 2SK3879-TE24LQ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK3879-TE24LQ		7,813			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK3878 POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 900V, 1.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK3878		34			1 $10.96 10 $7.31 100 $6.76 1000 $6.76 10000 $6.76	Buy Now
ComSIT USA	2SK3878		40			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	2SK3878		891			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	2SK3878		12,000			1 - 10 - 100 $1.28 1000 $1.06 10000 $1.06	Buy Now
Toshiba America Electronic Components 2SK3878F Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK3878F		4,538			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2SK387 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220	PDF
k3878 Abstract: 2SK3878STA1 2sk3878 Contextual Info: 2SK3878 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV 2SK3878 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 7.0 S (標準)	Original	2SK3878 k3878 2SK3878STA1 2sk3878	PDF
2sk3875 Contextual Info: 2SK3875-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	2SK3875-01 2sk3875	PDF
SJ 76 A DIODE Abstract: 2sk387201l Contextual Info: 2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators	Original	2SK3872-01L Symbol48V 100ms SJ 76 A DIODE 2sk387201l	PDF
Contextual Info: 2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)	Original	2SK3879	PDF
k3878 Abstract: transistor Toshiba K3878 toshiba k3878 2SK3878 transistor k3878 APPLICATION NOTE K3878 2SK3878 equivalent k3878 toshiba K387 SC-65 Contextual Info: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •	Original	2SK3878 k3878 transistor Toshiba K3878 toshiba k3878 2SK3878 transistor k3878 APPLICATION NOTE K3878 2SK3878 equivalent k3878 toshiba K387 SC-65	PDF
2SK3875 Abstract: 2SK3875-01 Contextual Info: 2SK3875-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	2SK3875-01 2SK3875 2SK3875-01	PDF
k3879 Abstract: 65a3 2SK3879 Contextual Info: 2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)	Original	2SK3879 k3879 65a3 2SK3879	PDF
k3878 Abstract: transistor Toshiba K3878 APPLICATION NOTE K3878 toshiba k3878 2SK3878 k3878 toshiba 2SK3878 equivalent transistor k3878 SC-65 K3878 transistor Contextual Info: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •	Original	2SK3878 k3878 transistor Toshiba K3878 APPLICATION NOTE K3878 toshiba k3878 2SK3878 k3878 toshiba 2SK3878 equivalent transistor k3878 SC-65 K3878 transistor	PDF
2SK3871-01MR Contextual Info: 2SK3871-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators	Original	2SK3871-01MR O-220F 100ms 2SK3871-01MR	PDF
mg15g1al3 Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673	OCR Scan	2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115	PDF
2SK3879 Abstract: K3068 Contextual Info: 2SK3879 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV 2SK3879 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 5.2 S (標準)	Original	2SK3879 2-10S2B 2SK3879 K3068	PDF
transistor Toshiba K3878 Abstract: K3878 toshiba k3878 k3878 toshiba APPLICATION NOTE K3878 transistor k3878 toshiba transistor k3878 2SK3878 2sk3878 toshiba K3878 transistor Contextual Info: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •	Original	2SK3878 transistor Toshiba K3878 K3878 toshiba k3878 k3878 toshiba APPLICATION NOTE K3878 transistor k3878 toshiba transistor k3878 2SK3878 2sk3878 toshiba K3878 transistor	PDF
2SK3870-01 Contextual Info: 2SK3870-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators	Original	2SK3870-01 O-220AB 100ms 2SK3870-01	PDF

2SK3876 Abstract: 2SK3876-01R Contextual Info: 2SK3876-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	2SK3876-01R 2SK3876 2SK3876-01R	PDF
K3879 Abstract: 2SK3879 Contextual Info: 2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2SK3879 K3879 2SK3879	PDF
2SK3879 Abstract: K3879 2SK38 k387 Contextual Info: 2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3879 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2SK3879 2SK3879 K3879 2SK38 k387	PDF
2SK387 Abstract: 2sk38 Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK387 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 20l5M a x . FEATURES : . Low Drain-Source ON Resistance : Rd S(ON)~0.12fi (Typ.)	OCR Scan	2SK387 20l5M 2SK387 2sk38	PDF
2SK3870-01 Abstract: 2sk387 Contextual Info: 2SK3870-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters	Original	2SK3870-01 O-220AB 100ms 2SK3870-01 2sk387	PDF
2SK3874 Abstract: 2SK3874-01R Contextual Info: 2SK3874-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters	Original	2SK3874-01R 2SK3874 2SK3874-01R	PDF
2SK3873 Abstract: 2SK3873-01 2sk38 Contextual Info: 2SK3873-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	2SK3873-01 2SK3873 2SK3873-01 2sk38	PDF
K3878 Abstract: toshiba k3878 2SK3878 k3878 toshiba SC-65 2sk3878 toshiba VDD400 Contextual Info: 2SK3878 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV 2SK3878 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 7.0 S (標準)	Original	2SK3878 SC-65 2-16C1B K3878 toshiba k3878 2SK3878 k3878 toshiba SC-65 2sk3878 toshiba VDD400	PDF
k3878 Abstract: transistor Toshiba K3878 toshiba k3878 APPLICATION NOTE K3878 2SK3878 2SK3878 equivalent transistor k3878 k3878 toshiba SC-65 2sk3878 toshiba Contextual Info: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •	Original	2SK3878 k3878 transistor Toshiba K3878 toshiba k3878 APPLICATION NOTE K3878 2SK3878 2SK3878 equivalent transistor k3878 k3878 toshiba SC-65 2sk3878 toshiba	PDF
2SK3879 Abstract: K3879 Contextual Info: 2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3879 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2SK3879 2SK3879 K3879	PDF

2SK387 Search Results

2SK387 Datasheets (24)

2SK387 Price and Stock

Toshiba America Electronic Components 2SK3878(F)

Fuji Electric Co Ltd 2SK3875-01

Toshiba America Electronic Components 2SK3879-TE24LQ

Toshiba America Electronic Components 2SK3878

Toshiba America Electronic Components 2SK3878F

2SK387 Datasheets Context Search

2SK1118

k3878

2sk3875

SJ 76 A DIODE

k3878

2SK3875

k3879

k3878

2SK3871-01MR

mg15g1al3

2SK3879

transistor Toshiba K3878

2SK3870-01

2SK3876

K3879

2SK3879

2SK387

2SK3870-01

2SK3874

2SK3873

K3878

k3878

2SK3879