2SK556, Search Results

2SK556, Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK556	Hitachi Semiconductor	Silicon N-Channel MOS FET	Scan	PDF	146.95KB	4
2SK556	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF	133.16KB	1
2SK556	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	82.7KB	1
2SK556	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	94.51KB	1
2SK556	Unknown		Scan	PDF	48.89KB	1
2SK556	Unknown	FET Data Book	Scan	PDF	91.06KB	2
2SK556	Renesas Technology	Silicon N-Channel MOS FET	Scan	PDF	257.74KB	4

2SK556, Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK556 Abstract: 2SK557 Contextual Info: 2SK556,2SK557 -> i; a> N MOS FET SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 5.0max. 1.5 1. Y — h Gate 2. Y V- -i > Drain 2.8 7 7 > ’ y (Flange) 3. 7 — X ; Source (Dimensions in mm) (TO-3P) ABSOLUTE MAXIMUM RATINGS m Kw y s a — > h •	OCR Scan	2SK556 2SK557	PDF
DIODE T25 4 Jo Abstract: 2SK556 2SK557 H909 Hitachi Scans-001 Contextual Info: blE D 44*11,505 0 0 1 3 m i G74 « H I T 4 2SK556,2SK557 „m C H I/C O P TO EU C TK O H I« SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • • • • • Low O n-R esistance. High S peed Switching. Low Drive Current. No Secondary Breakdown.	OCR Scan	0013mi 2SK556 2SK557 2SK556, 2SK557 DIODE T25 4 Jo H909 Hitachi Scans-001	PDF
2SK557 Abstract: 12A 250v 314 hitachi ha-1 IT 314 2SK55 2SK556 A111-1 IT314 Hitachi Scans-001 ISV10 Contextual Info: bl E D 44*^205 0013DS1 Ü74 IHIT4 2SK556,2SK557 H IT A C H I/C O P T O E L E C T R O N IC S » S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance. • High Speed Switching. • Low Drive Current. • No Secondary Breakdown.	OCR Scan	00130S1 2SK556 2SK557 2SK556, 2SK557 12A 250v 314 hitachi ha-1 IT 314 2SK55 A111-1 IT314 Hitachi Scans-001 ISV10	PDF

Catalog Datasheet

Type

Document Tags

PDF

2SK556

Abstract: 2SK557
Contextual Info: 2SK556,2SK557 -> i; a> N MOS FET SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 5.0max. 1.5 1. Y — h Gate 2. Y V- -i > Drain 2.8 7 7 > ’ y (Flange) 3. 7 — X ; Source (Dimensions in mm) (TO-3P) ABSOLUTE MAXIMUM RATINGS m Kw y s a — > h •

OCR Scan

2SK556 2SK557

PDF

DIODE T25 4 Jo

Abstract: 2SK556 2SK557 H909 Hitachi Scans-001
Contextual Info: blE D 44*11,505 0 0 1 3 m i G74 « H I T 4 2SK556,2SK557 „m C H I/C O P TO EU C TK O H I« SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • • • • • Low O n-R esistance. High S peed Switching. Low Drive Current. No Secondary Breakdown.

OCR Scan

0013mi 2SK556 2SK557 2SK556, 2SK557 DIODE T25 4 Jo H909 Hitachi Scans-001

PDF

2SK557

Abstract: 12A 250v 314 hitachi ha-1 IT 314 2SK55 2SK556 A111-1 IT314 Hitachi Scans-001 ISV10
Contextual Info: bl E D 44*^205 0013DS1 Ü74 IHIT4 2SK556,2SK557 H IT A C H I/C O P T O E L E C T R O N IC S » S IL IC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance. • High Speed Switching. • Low Drive Current. • No Secondary Breakdown.

OCR Scan

00130S1 2SK556 2SK557 2SK556, 2SK557 12A 250v 314 hitachi ha-1 IT 314 2SK55 A111-1 IT314 Hitachi Scans-001 ISV10

PDF