2SK61 Search Results

k613

Abstract: 2SK013 2SK613 2SK613-3 sony IT 243 sony m-100
Contextual Info: Sony. 2SK613 Silicon N-Channel Junction FET U n it: mm P a cka g e O u tlin e D escrip tion M aking the best of Epitaxy and Pattern latest technology, 2 S K 6 13 accom plishes so far unattain­ able levels of performance. Usage with head am plifiers for video cam eras

Contextual Info: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low ON resistance • High-speed switching • Allowing to be driven directly CMOS, TTL

2SK614

Abstract: to-92 type
Contextual Info: Silicon MOS FETs Small Signal 2SK614 Silicon N-Channel MOS FET For switching unit: mm 5.0±0.2 5.1±0.2 • Features 13.5±0.5 ● Low ON-resistance RDS(on) ● High-speed switching ● Allowing to be driven directly by CMOS and TTL +0.2 Symbol +0.2 0.45 –0.1

2sk to-92

Contextual Info: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80

vth for mos 0,9

Abstract: 2SK0615 2SK615 SC-71
Contextual Info: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features 2.5±0.1 6.9±0.1 Drain to Source voltage 80 V 20 V ±0.5 A ID Max drain current Allowable power dissipation Channel temperature Storage temperature

2SK613

Abstract: SK813 2SK613-2 2SK613-4 2SK613-3 TMS23
Contextual Info: S O NY CORP/COMPONENT PRODS 4TE D • 63flE363 0003077 2SK613 I SONY. Silicon N-Channel Junction FET Description Waking the best of Epitaxy and Pattern latest technology, 2 S K 6 13 accomplishes so far unattain able levels of performance. Usage with head amplifiers for video cameras

2SK619

Abstract: high impedance amplifier
Contextual Info: 2SK619 '> IJ z i y N F + MOS FET SILICON N-CHANNEL MOS FET HIGH FREQUENCY AMPLIFIER HIGH IMPEDANCE AMPLIFIER 1. . K V 4 > : Drain 2. V — X : Source 3. r — h : Gate Dimensions in mm (JED EC TO-126 MOD.) ABSOLUTE MAXIMUM RATINGS {T a = § m Y V 4 • V -

2SK645

Abstract: 2SK630 2SK626 2sk633 2SK63 2SK621 2SK647 2SK628 2SK629 2SK635
Contextual Info: - 58 - Sí £ tt A f ffl MOS N E 200 DSX RF PA,SW MOS N E 800 DSS ±20 S V/UHF LN A GaAs N D 10 DSX RF A, t'ftltitl MOS N E 70 DSS * a % * 2SK617 « ± W 8 tëff 2SK618 2SK619 2SK62Û 2SK521 BÍL féT féT 2SK622 2SK623 2SK624 B aL föT 2SK625 V * fi JÈ

Contextual Info: 2SK615 Silicon MOS FETs Small Signal 2SK615 Silicon N-Channel MOS Unit : mm For switching 6.9±0.1 ● Easy automatic- /manual-insertion due to M type package. Self-fix- 1.0 Direct drive possible with CMOS, TTL 0.85 ing to printed circuits board. 4.5±0.1

Contextual Info: 2SK614 Silicon MOS FETs Small Signal 2SK614 Silicon N-Channel MOS Unit : mm For switching 4.0±0.2 5.1±0.2 5.0±0.2 Low ON-resistance RDS(on) ● High-speed switching ● Direct drive possible with CMOS, TTL +0.2 +0.2 0.45 –0.1 0.45 –0.1 • Absolute Maximum Ratings (Ta = 25˚C)

2SK0614

Abstract: 2SK614
Contextual Info: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.1±0.2 For switching circuits 4.0±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

2SK0614

Abstract: 2SK614
Contextual Info: Silicon MOS FETs Small Signal 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm 5.0±0.2 5.1±0.2 • Features 4.0±0.2 13.5±0.5 ● Low ON-resistance RDS(on) ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ■ Absolute Maximum Ratings (Ta = 25°C)

2SK61

Abstract: 2SK0615 2SK615 SC-71
Contextual Info: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as

Contextual Info: S ONY CORP/COMPONENT PRODS MTE D 63ÖE363 0DD3D77 b • S ON Y SONY, 2SK613 Silicon N-Channel Junction FET ^ < 2 5^ Package Outline Description Unit: mm Waking the best of Epitaxy and Pattern latest technology, 2SK613 accomplishes so far unattain­ able levels of performance.

2SK0614

Abstract: 2SK614
Contextual Info: Silicon MOS FETs Small Signal 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm • Features 5.0±0.2 0.7±0.2 5.1±0.2 ● Low ON-resistance RDS(on) ● High-speed switching ● Allowing to be driven directly by CMOS and TTL 4.0±0.2 12.9±0.5

SSSMini3-F1 transistor

Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)

Contextual Info: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as

2SK0614

Abstract: 2SK614
Contextual Info: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 • Low ON resistance • High-speed switching • Allowing to be driven directly CMOS, TTL 0.7±0.2 • Features 13.5±0.5

2SK0615

Abstract: 2SK615 SC-71
Contextual Info: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching unit: mm • Features 6.9±0.1 * 1.0 0.85 Ratings Unit Drain to Source voltage VDS 80 V Gate to Source voltage VGSO 20 V Drain current ID ±0.5 A Max drain current IDP

2SK612

Abstract: 42755S
Contextual Info: N E C ELECTRONICS INC 6427525 N E C ELECTRONICS INC TÛ DeT|l,42755S DOlflflM? 3 98D 18847 D W MOS FIELD EFFECT POWER TRANSISTOR 2SK612 FAST S W IT C H IN G N-CHANNEL SILICON POWER M O S FET IN D U STR IA L USE FE A T U R E S PACKAG E D IM E N S IO N S U n it: m m

2SK613-2

Contextual Info: 2SK613-2 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)15 I(D) Max. (A)50m I(G) Max. (A)5m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)2.0n @V(GS) (V) (Test Condition)7 V(GS)off Min. (V).65 I(DSS) Max. (A)21m

Contextual Info: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 0.7±0.1 Symbol Rating Unit Drain-source voltage VDS 80 V Gate-source voltage (Drain open) VGSO 20 V 0.5 A 1.0 A 750 mW 150

2SK0615

Abstract: 2SK615 SC-71
Contextual Info: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm M Di ain sc te on na tin nc ue e/ d • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39