2SK66 Search Results

2SK0662

Abstract: 2SK662
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency and low-noise amplification • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665 (2SK665) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency amplification For switching circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1

2SK669

Contextual Info: Ordering number:EN2563C N-Channel Enhancement Silicon MOSFET 2SK669 Very High-Speed Switch, Analog Switch Applications Applications Package Dimensions • Analog switches, low-pass filters, Ultrahigh-speed switches. unit:mm 2040A [2SK669] 4.0 Features 3.0 · Large yfs.

2SK0662

Abstract: 2SK662
Contextual Info: Silicon Junction FETs Small Signal 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification unit: mm 2.1±0.1 • Features 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 +0.1 0.425 ● High mutual conductance gm ● Low noise type

2SK0662

Abstract: 2SK662
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency and low-noise amplification • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

2SK0663

Abstract: 2SK663
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Features ue pl d in

2SK0664

Abstract: 2SK664
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0664 (2SK664) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 2 0.2±0.1 1

2SK0665

Abstract: 2SK665
Contextual Info: Silicon MOS FETs Small Signal 2SK0665 (2SK665) Silicon N-Channel MOS FET (0.425) unit: mm 0.3+0.1 –0.0 For switching 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 ● High-speed switching ● Small drive current owing to high input inpedance ● High electrostatic breakdown voltage

2SK0665

Abstract: 2SK665
Contextual Info: Silicon MOSFETs Small Signal 2SK0665 (2SK665) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Small drive current owing to high input inpedance

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0664 (2SK664) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ 2 0.2±0.1 1 2.1±0.1 M Di ain sc te on na

2SK665

Contextual Info: Silicon MOS FETs Small Signal 2SK665 Silicon N-Channel MOS FET For switching unit: mm 2.1±0.1 • Features 0.425 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 +0.1 ● High-speed switching ● Small drive current owing to high input inpedance ● High electrostatic breakdown voltage

D2006

Abstract: N1501 2SK669 ITR00863 ITR00864 8019K
Contextual Info: 注文コード No.N 2 5 6 3 D 2SK669 三洋半導体データシート 半導体ニューズ No.N2563C とさしかえてください。 2SK669 N チャネルエンハンスメント MOS 形シリコン電界効果トランジスタ 超高速スイッチアナログスイッチ用

2SK620

Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663

2SK669

Contextual Info: j Ordering number: EN 2563C No.2563C 7/ 2SK669 N-Channel Enhancement MOS Silicon FET Very High-Speed Switch, Analog Switch Applications Applications • Analog switches, low-pass filters, very high-speed switches F e a tu re s • Large lyfs! • Enhancement type

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency and low-noise amplification 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚

2SK660

Abstract: 2SK66
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance

2SK0665

Abstract: 2SK665
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665 (2SK665) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/ d 5˚ • High-speed switching

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET For low-frequency and low-noise amplification • Package • Code SMini3-G1 • Pin Name M Di ain sc te on na

2SK0665

Abstract: 2SK665
Contextual Info: Silicon MOS FETs Small Signal 2SK0665 (2SK665) Silicon N-Channel MOS FET unit: mm 2.1±0.1 For switching 1.25±0.1 0.425 0.3–0 0.65 ● High-speed switching ● Small drive current owing to high input inpedance ● High electrostatic breakdown voltage

2SK0664

Abstract: 2SK664
Contextual Info: Silicon MOSFETs Small Signal 2SK0664 (2SK664) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing

Contextual Info: 2SK664 Silicon MOS FETs Small Signal 2SK664 Silicon N-Channel MOS Unit : mm For switching 2.1±0.1 0.425 • Features High-speed switching ● Downsizing of sets by S-mini type package and automatic insertion 0.425 0.3 -0 0.65 1 0.65 by taping/magazine packing are available.

Contextual Info: 2SK663 Silicon Junction FETs Small Signal 2SK663 Silicon N-Channel Junction Unit : mm For low-frequency amplification For switching 2.1±0.1 0.425 1.25±0.1 0.425 ● Downsizing of sets by S-mini type package and automatic insertion 0.3 -0 Low noise type

2SK0662

Abstract: 2SK662
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET For low-frequency and low-noise amplification • Package ■ Features • High mutual conductance gm • Low noise type