2SK88 Search Results

2SK880

Contextual Info: 2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.)

Contextual Info: 2SK882 SILICON N CHANNEL MOS TYPE FM TUNER, VHF RF A MPLIFIER APPLICATIONS. Unit in mm . Low Reverse Transfer Capacitance: Crss= 0 •025pF Typ. . Low Noise Figure 2.110.1 1.25 ±0.1 :NF= 1 .7dB(Typ.) . High Power Gain :Gps=28dB(Typ.) . Reconunend Operation Voltage

2SK880

Contextual Info: SILICON N CHANNEL JUNCTION TYPE 2SK880 Unit in mm AU D IO F R E Q U EN C Y LOW N O IS E A M P L I F I E R A P P L I C A T I O N S . 2.1 ± 0.1 1.2 5 ± 0 .1 • High Y fs : EE IYfs |=15ms Typ. at Vd s =10V, Vg s =0 • High Breakdown Voltage: • Low Noise:

2SK880

Contextual Info: 2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)

2SK881

Contextual Info: 2SK881 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK881 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB typ. (f = 100 MHz) · High forward transfer admittance: |Yfs| = 9 mS (typ.) Maximum Ratings (Ta = 25°C)

2SK880

Contextual Info: TOSHIBA 2SK880 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK880 AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS • High |Yfs | U nit in mm 2.1 ± 0 .1 : |Yfs| = 15mS Typ. at VDS = 10V, 1.25 ± 0.1 VGS = 0 • High Breakdown Voltage : V q d s = —50V

2SK880

Contextual Info: TO SH IBA 2SK880 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK880 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS • High |Yfs| • • High Breakdown Voltage : V Q D g=—50V Low Noise : NF = l.OdB Typ. at Vn« = 10V, In = U.5mA, f = 1kHz,

2SK880

Abstract: MARKING LODB
Contextual Info: T O S H IB A 2SK880 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK880 Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS • High |Yfs| : |Yfc| = 15mS Typ. at V D S = 10V, 2.1 + 0.1 vGs=o 1.25 ± 0.1 3- • High Breakdown Voltage : V q d s = —50Y

2SK881

Abstract: L180 2sk88
Contextual Info: TOSHIBA 2SK881 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK881 FM TUNER APPLICATIONS U n it in mm VHF BAND AMPLIFIER APPLICATIONS 2.1 ± 0.1 1.25 ± 0.1 3- • Low Noise Figure : N F = 2.5dB Typ. (f=100M Hz) • High Forward Transfer Adm ittance : |Yfs|= 9mS (Typ.)

Contextual Info: 2SK881 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK881 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB typ. (f = 100 MHz) • High forward transfer admittance: |Yfs| = 9 mS (typ.) Maximum Ratings (Ta = 25°C)

2SK881

Contextual Info: 2SK881 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK881 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB typ. (f = 100 MHz) • High forward transfer admittance: |Yfs| = 9 mS (typ.) Absolute Maximum Ratings (Ta = 25°C)

transistor marking BOs

Abstract: n09z
Contextual Info: TOSHIBA 2SK881 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 9 <; K 8 8 1 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. Unit in mm 2.1 ± 0.1 1.25±0.1 0.65 ,0.65 Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admittance

2SK882

Contextual Info: TO SH IB A 2SK882 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK882 Unit in mm FM TUNER, VHF RF AM PLIFIER APPLICATIONS • • • • Low Reverse Transfer Capacitance Crss = 0-025PF Typ. NF= 1.7dB (Typ.) Low Noise Figure High Power Gain

Contextual Info: SILICON N CHANNEL JUNCTION TYPE 2SK881 FM T UNER APPLICATIONS. U n i t i n mm VHF BAND A M PLIFIER APPLICATIONS. . Low Noise Figure 2.1 ± 0.1 : N F = 2 .5 d B T y p . 1.25 ± 0.1 (f=100MHz) 3 . Hi gh Forw ar d T r a n s f e r Admittance: | Yfs | = 9mS(Typ.)

Contextual Info: TO SHIBA 2SK881 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK881 U nit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS • • 2.1 ± 0.1 Low Noise Figure : NF = 2.5dB Typ. (f=100M Hz) High Forward Transfer Admittance : |Yfs|= 9mS (Typ.)

Contextual Info: T O SH IB A 2SK880 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK880 AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS • High |Yfs| U nit in mm 2.1 + 0.1 : |Yfe| = 15mS Typ. at VDS = 10V, 1.25 ± 0.1 r- • ■1-i vGs=o 3 - • High Breakdown Voltage

2SK882

Abstract: SNF10 K882 sk882
Contextual Info: TOSHIBA 2SK882 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE 2SK882 Unit in mm FM TUNER, VHF RF A M PLIFIER APPLICATIONS • • • • 2.1 ± 0.1 Low Reverse Transfer Capacitance Crss = 0.025pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain

2SK882

Abstract: TRANSISTOR MARKING FA
Contextual Info: TO SH IB A 2SK882 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK882 Unit in mm FM TUNER, VHF RF AM PLIFIER APPLICATIONS • • • • Low Reverse Transfer Capacitance Crss = 0-025PF Typ. NF= 1.7dB (Typ.) Low Noise Figure High Power Gain

2SK882

Contextual Info: 2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.025 pF typ. · Low noise figure: NF = 1.7dB (typ.) · High power gain: Gps = 28dB (typ.)

SNF10

Abstract: 2SK882 z6100 p250a
Contextual Info: TOSHIBA 2SK882 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK882 FM TUNER, VHF RF AM PLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Low Reverse Transfer Capacitance Crss = 0.025pF Typ. • Low Noise Figure NF = 1.7dB (Typ.) • High Power Gain

2SK889

Abstract: 007IL
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH 2SK889 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. . Low Drain-Source ON Resistance : Rd S (ON) = 0-07il(Typ.)

2SK880

Contextual Info: T O S H IB A 2SK880 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK880 Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS • High |Yfs| : |Yfc| = 15mS Typ. at VDS = 10V, 2.1 + 0.1 vGs=o ± 0.1 1.25 3- • High Breakdown Voltage : V q d s = —50Y

Contextual Info: 2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit: mm • • • • • High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0 High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.)

2SK880

Abstract: hz4120 10VRg
Contextual Info: 2SK880 東芝電界効果トランジスタ シリコンNチャネル接合形 2SK880 ○ 低周波低雑音増幅用 単位: mm • 小型パッケージです。 • 高|Yfs|のため高利得が得られます。 : |Yfs| = 15 mS 標準 (VDS = 10 V, VGS = 0)