2SK9 Search Results

2SK945

Abstract: 2SK9
Contextual Info: TOSHIBA 2SK945 Field Effect Transistor Silicon N Channel MOS Type rc-MOS II High Speed, High Current Switching, DC-DC Converter, Chopper Regulator and Motor Drive Applications Features • L o w D ra in -S o u rc e O N R esistan ce • r d s (o n ) = (T y p -)

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

2SK1118

Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531

2SK940

Contextual Info: 2SK940 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7 r-M O S lIl INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. 5.1 MAX RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. . 4-Volt Gate Drive . L o w Drain-Source ON Resistance

2SK963

Abstract: 2SK9
Contextual Info: 2SK963 Power F-MOS FET 2SK963 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON r e s is ta n c e R us on : R ds (on) = 0 .4 5 i l (ty p .) • High sw itc h in g r a te : t f = 4 5 n s (ty p .) • No se c o n d a ry b reak d o w n

2SK937

Contextual Info: Ordering number:EN 3006 _ 2SK937 No.3006 N-Channel Junction Silicon FET High-Frequency General-Purpose Amp Applications F e a tu re s • Adoption of FBET process •Large lyfsl ■Small ciss A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage

2SK955

Abstract: 2SK906A 2SK1134 2SK899 2SK900 2SK2001 2SK1660 2SK725 2SK2000A 2SK905
Contextual Info: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A

2SK995

Contextual Info: Pow er F-M O S F E T 2SK995 2SK995 Silicon N -channel Power F -M O S F E T • Package Dim ensions ■ Features • • • • • Unit: mm Low ON resistance Rns on : RDS (on) = 1 .2 0 (typ.) High switching rate : tt=65ns (typ.) No secondary breakdown High breakdown voltage, large power

diode A226

Abstract: 2SK903 equivalent 2sk903 2SK903-M
Contextual Info: 2SK903-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■A p plications

2SK996

Abstract: 1128A FET 1127
Contextual Info: P o w er F-MOS FET 2SK 996 2SK996 Silicon N-channel Power F-M O S FET Package Dim ensions • Features • Low ON resistan ce R ds on : R d s (on) = 1 .2 ii (typ.) • High sw itching ra te : tf = 60ns (typ.) • No secondary breakdown Unit: mm .10 2rr L4m ax

2SK932

Contextual Info: Ordering number:EN2841 N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions • AM tuner RF amplifier, low-noise amplifier. unit:mm 2050A Features [2SK932] · Adoption of FBET process. · Large yfs.

Contextual Info: 2SK974 L , 2SK974(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK94

Contextual Info: 2SK949-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage TO-220F15 Applications Switching regulators UPS DC-DC converters General purpose power amplifier

2SK1778

Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Contextual Info: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247

tcs5

Contextual Info: 2SK902 FUJI POWER MOS-FET n - :h a n n e l s ilic o n p o w e r m o s -fe t F -I S E R IE S lOutline Drawings • Features • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power ■ Applications • UPS • [ C-DC converters

2824I

Abstract: FUJI DS-100
Contextual Info: 2SK901 ">1 FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET p • Features S E R IE S ^ HOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power ■Applications • UPS • DC DC converters • General purpose power amplifier

Contextual Info: 2SK951-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220F15 Applications Switching regulators UPS DC-DC converters

2SK952

Contextual Info: 2SK952 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-220AB Applications Switching regulators UPS DC-DC converters

BU 2058

Abstract: 2SK932 OT100 transistor R3125
Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7TT707t 2SK932 000 3=1130 T T - J /- Z 5 N -C h an n el Junction Silicon FET 2050 High-Frequency Low-Noise Amp Applications 2841 A p p lic a tio n s • AM tu n e r RF am p, low-noise am p F e a tu re s • Adoption of FBET process

2SK955

Abstract: SC-65 640Vv 2SK9 AAFW
Contextual Info: 2SK955 FUJI PO W ER M O S-F ET N-CHANNEL SILICON POWER MOS-FET F-I S E R I E S lOutline Drawings ! • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators

2SK980

Contextual Info: HITACHI 2SK980 SILICON N-CHANNEL JUNCTIO N FET VIDEO FR EQ UENC Y LOW NOISE AMPLIFIER 0.1 :« 0-1C-S« T .r 1-j _ . _ . “ 1 i 2 ;l : ih i_ ¡.0 $5.| 0/55 in1';•"?[ — <jl M — i- 1 19 . L 1. D.- i.n î> o| 2Ü'S? ì. S o.rtt J. C-jiì m! (Oirwv>im> in ir<n>

2SK998

Abstract: PA33 TDA7508
Contextual Info: Y =7 7 .9 J u n c tio n F ie ld E ffe c t T ra n s is to r 2SK998 ' =1 N ¡ M & i& m m & h =7 > î > 7 . 9 £ u ' m ix m it O |gj G ain. iWj I Yfs I ) ~C~t~0 o t . 'y 'f iz M M 'C i'o o (T a = 25 °C) m g »§• ^r fê Æ il Y - h • K U 't > H B * Œ

Hitachi DSA002779

Contextual Info: 2SK975 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

nf012

Abstract: 2SK902
Contextual Info: 2SK902 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power TO-3P Applications UPS Uninterruptible Power Supply DC-DC converters General purpose power amplifier