2SK97 Search Results

Contextual Info: 2SK974 L , 2SK974(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK1778

Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Contextual Info: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247

Hitachi DSA002779

Contextual Info: 2SK975 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

k1835

Abstract: 2SK979
Contextual Info: • Ä 9 -M O S -F E 7 2SK979 IS <Ta = 25uC F l" f y ae-s K u h • V - < > V Ü J£ Vgss -2 0 V saâfcï Id 10 A lo(pu^$)% 35 A 120 (Te=25*C) W 150 X > 18 X : < s-T- 3 -7- V * í& ;u ss Ï? ig. ;)m * Po « Tch ߣ Tstg -5 5 æ PW^lmseCv Outy cycle IS B

2SK973

Abstract: Hitachi DSA0015
Contextual Info: 2SK973 L , 2SK973(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK972

Abstract: Hitachi DSA0015
Contextual Info: 2SK972 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK975

Abstract: Hitachi DSA0015
Contextual Info: 2SK975 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SK973L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)10 Minimum Operating Temp (øC)

2SK97

Contextual Info: 2SK97 Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)210m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2SK970 blE ]> • 44^205 - 0 0 1 3 1 4 ^ 71G ■ H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ZEE 02 ■ FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device

C313C

Abstract: 2SK971
Contextual Info: 2SK971 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,

2SK970

Abstract: 2SK97 NS8060
Contextual Info: 2SK970 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,

2SK974

Abstract: 2SK974S
Contextual Info: 2SK974 L , 2SK974 S Silicon N-Channel MOS FET Application 4 DPAK-1 High speed power switching 4 Features 12 • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,

2SK971

Abstract: Hitachi DSA00163 2SK971E
Contextual Info: 2SK971 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SK975 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK975

Abstract: Hitachi DSA00388
Contextual Info: 2SK975 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: Preliminary Datasheet 2SK975 R07DS0434EJ0300 Previous: REJ03G0905-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device

Contextual Info: 2SK979 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)35 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)120 Minimum Operating Temp (øC)

2SK97-3

Abstract: 2SK973
Contextual Info: 2SK973 L , 2SK973 S Silicon N-Channel MOS FET Application 4 DPAK-1 High speed power switching 4 Features 12 • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,

2SK97-2

Abstract: 2SK972
Contextual Info: 2SK972 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,

Contextual Info: 2SK973 L , 2SK973(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK2728

Abstract: 2sk2729
Contextual Info: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SK741 2SK1667 2SK970 2SK2927 2SK971 2SK2928, 2SK2929

2SK975

Contextual Info: 2SK975 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for m otor drive, D C-D C converter, pow er sw itch and solenoid drive

Contextual Info: 2SK974S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)