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    2SK97 Search Results

    2SK97 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK972-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 25A Mohm To-220Ab Visit Renesas Electronics Corporation
    2SK975TZ-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 1.5A 400Mohm To-92 Mod Visit Renesas Electronics Corporation
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    2SK97 Price and Stock

    Rochester Electronics LLC 2SK970-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK970-E Bulk 163
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    Rochester Electronics LLC 2SK974L-E

    GENERAL SWITCHING POWER MOSFET
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    DigiKey 2SK974L-E Bulk 194
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    Rochester Electronics LLC 2SK973L-E

    GENERAL SWITCHING POWER MOSFET
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    DigiKey 2SK973L-E Bulk 263
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    Rochester Electronics LLC 2SK972-94-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK972-94-E Bulk 151
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    Rochester Electronics LLC 2SK974-93L-E

    GENERAL SWITCHING POWER MOSFET
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    DigiKey 2SK974-93L-E Bulk 194
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    2SK97 Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK97 Unknown FET Data Book Scan PDF
    2SK97 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK97 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK970 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK970 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK970 Unknown FET Data Book Scan PDF
    2SK970 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK970 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK970 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK971 Fuji Electric Silicon N-Channel MOS FET Original PDF
    2SK971 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK971 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK971 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK971 Unknown FET Data Book Scan PDF
    2SK971 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK971 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK971 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK971 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK97-1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK972 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF

    2SK97 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK975 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK975 D-85622 Hitachi DSA002779

    2SK973

    Abstract: Hitachi DSA0015
    Text: 2SK973 L , 2SK973(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK973 Hitachi DSA0015

    2SK972

    Abstract: Hitachi DSA0015
    Text: 2SK972 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK972 O-220AB 2SK972 Hitachi DSA0015

    2SK975

    Abstract: Hitachi DSA0015
    Text: 2SK975 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK975 2SK975 Hitachi DSA0015

    Untitled

    Abstract: No abstract text available
    Text: 2SK973L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)10 Minimum Operating Temp (øC)


    Original     		PDF 2SK973L

    2SK97

    Abstract: No abstract text available
    Text: 2SK97 Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)210m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF 2SK97

    C313C

    Abstract: 2SK971
    Text: 2SK971 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


    Original     		PDF 2SK971 220AB C313C 2SK971

    2SK970

    Abstract: 2SK97 NS8060
    Text: 2SK970 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


    Original     		PDF 2SK970 220AB 2SK970 2SK97 NS8060

    2SK974

    Abstract: 2SK974S
    Text: 2SK974 L , 2SK974 S Silicon N-Channel MOS FET Application 4 DPAK-1 High speed power switching 4 Features 12 • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


    Original     		PDF 2SK974 2SK974S

    2SK971

    Abstract: Hitachi DSA00163 2SK971E
    Text: 2SK971 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK971 O-220AB D-85622 2SK971 Hitachi DSA00163 2SK971E

    2SK975

    Abstract: Hitachi DSA00388
    Text: 2SK975 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK975 2SK975 Hitachi DSA00388

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SK975 R07DS0434EJ0300 Previous: REJ03G0905-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device


    Original     		PDF 2SK975 R07DS0434EJ0300 REJ03G0905-0200) PRSS0003DC-A

    Untitled

    Abstract: No abstract text available
    Text: 2SK979 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)35 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)120 Minimum Operating Temp (øC)


    Original     		PDF 2SK979

    2SK97-3

    Abstract: 2SK973
    Text: 2SK973 L , 2SK973 S Silicon N-Channel MOS FET Application 4 DPAK-1 High speed power switching 4 Features 12 • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


    Original     		PDF 2SK973 2SK97-3

    Untitled

    Abstract: No abstract text available
    Text: 2SK974S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)


    Original     		PDF 2SK974S

    Untitled

    Abstract: No abstract text available
    Text: 2SK974 L , 2SK974(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SK974

    2SK1778

    Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
    Text: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247


    OCR Scan     		PDF 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK13003 2SK1665 2SK1778 27.145 2SK1296 2SJ172 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302

    k1835

    Abstract: 2SK979
    Text: • Ä 9 -M O S -F E 7 2SK979 IS <Ta = 25uC F l" f y ae-s K u h • V - < > V Ü J£ Vgss -2 0 V saâfcï Id 10 A lo(pu^$)% 35 A 120 (Te=25*C) W 150 X > 18 X : < s-T- 3 -7- V * í& ;u ss Ï? ig. ;)m * Po « Tch ߣ Tstg -5 5 æ PW^lmseCv Outy cycle IS B


    OCR Scan     		PDF 2SK979 k1835 2SK979

    Untitled

    Abstract: No abstract text available
    Text: 2SK970 blE ]> • 44^205 - 0 0 1 3 1 4 ^ 71G ■ H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ZEE 02 ■ FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device


    OCR Scan     		PDF 2SK970 44Tb20S

    Untitled

    Abstract: No abstract text available
    Text: 2SK971 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SK971 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: 2SK975 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SK975

    Untitled

    Abstract: No abstract text available
    Text: 2SK973 L , 2SK973(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SK973 2SK973Ã

    2SK2728

    Abstract: 2sk2729
    Text: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SK741 2SK1667 2SK970 2SK2927 2SK971 2SK2928, 2SK2929


    OCR Scan     		PDF 2SK741 2SK970 2SK971 2SK972 2SK973 2SK974 2SK1093 2SK1094 2SK2728 2sk2729

    2SK975

    Abstract: No abstract text available
    Text: 2SK975 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for m otor drive, D C-D C converter, pow er sw itch and solenoid drive


    OCR Scan     		PDF 2SK975 2SK975