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    Contextual Info: Preliminary Datasheet 2SK975 R07DS0434EJ0300 Previous: REJ03G0905-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device


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    2SK975 R07DS0434EJ0300 REJ03G0905-0200) PRSS0003DC-A PDF

    2SK975TZ

    Abstract: 2SK975 PRSS0003DC-A 2sk975t
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    2SK975TZ-E

    Contextual Info: Preliminary Datasheet 2SK975 R07DS0434EJ0300 Previous: REJ03G0905-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device


    Original
    2SK975 R07DS0434EJ0300 REJ03G0905-0200) PRSS0003DC-A 2SK975TZ-E PDF

    2SK975TZ

    Abstract: 2SK975 PRSS0003DC-A
    Contextual Info: 2SK975 Silicon N Channel MOS FET REJ03G0905-0200 Previous: ADE-208-1243 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source


    Original
    2SK975 REJ03G0905-0200 ADE-208-1243) PRSS0003DC-A 2SK975TZ 2SK975 PRSS0003DC-A PDF