2SR 715 Search Results

LTC-3710G

Abstract: LTG-3710 LTC-3710 371g 371QY
Contextual Info: ÖÖ35547 G0DG71Ö 2 LTC-3710 SERIES TAIWAN LITON ELECTRONIC S4E D T ~ 4 I ~ 0.3" FO UR D IGIT LE D C LO C K FR EQ U EN C Y D ISP LA YS ^ w M r SPECIALIST FEA T U R E S • 0.3 INCH 7.62mm D IG IT HEIGHT. • CONTINUOUS UNIFORM SEGMENTS. • CHOICE OF S IX BRIG H T COLORS RED /BRIG H T

D SUB connector ITT Cannon

Abstract: MDM-15P Hysol HD3561 WC28 MDM-25P 2-56UNC-2B A141 A172 MIL-C-83513 MDM-100P
Contextual Info: MDM Micro-D M etal Shell - .050" C en ter Spacing P IN /M IC R O SO C K E T™ contacts on .0 50 1.27 centers in a contact density identical to the stan­ dard M ICRO-D connector series, but with these additional features: MDM connectors are used in applications requiring

DP 704

Abstract: 898N 9576 GM 455T 879N 879F 855p transistor 9751 UPC 923 642T
Contextual Info: PICO Pico # • Glass Fuses and Fuse Holders 905 • Constructed of tough black thermoset UL94V0 . Includes 3 springs for various fuse sizes and spring-locked, bayonet type knob. Supplied with 15” loop of 14 gauge red wire. Use with Glass SFE 7-1/2, 9, 14, 20, AGA, AGC,

Contextual Info: I P ^ iU ö Ä Ä f in te i 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Very High-Performance Read — 85 ns Maximum Access Time

Contextual Info: 524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION DECEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • Automated Byte Write and Block Erase — Industry-Standard Command User Interface

hp vanc

Abstract: MAX714
Contextual Info: IS28F004BV/BLV 524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Ërase — 2.7V, 3.3V or 5V Read Operation Automated Byte W rite and Block Erase — Industry-Standard Command User Interface — Status Registers

Contextual Info: PRODUCT PREVIEW in te l SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 28F200B5, 28F400B5, 28F800B5 SmartVoltage Technology — Smart 5 Flash: 5V Reads, 5V or 12V Writes — Increased Programming Throughput at 12V Vrp Very High-Performance Read — 2-, 4-Mbit: 60 ns Access Time

Contextual Info: ir v tJ . 4-MBIT 256K x 16, 512K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F400BL-T/B, 28F004BL-T/B • Low Voltage Operation for Very Low-Power Portable Applications — Vcc = 3.0V-3.6V Read — Vcc = 3.15V-3.6V Program/Erase ■ SRAM-Compatible Write Interface

Contextual Info: IS28F400BV/BLV 262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION NOVEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Plead Maximum Access Times — 5V: 60/80/120 ns

Contextual Info: SIEM ENS Audio Ringing Codec Filter Featuring Speakerphone Function ARCOFI -SP PSB 2165 CMOS 1C Preliminary Data 1.1 Features • Applications in digital terminal equipment featuring voice functions • Digital signal processing performs all CO D EC functions

cyclohexene

Abstract: 82306 1010218 urea formaldehyde resin adhesive tetrabutyl tin zinc naphthenate hydroquinone manufacturing process calcium chloride p-chlorophenol pentaerythritol
Contextual Info: Matsushita Electric Group Chemical Substance Management Rank Guidelines Version 2 July 6, 2000 Matsushita Electric Industrial Co., Ltd. Contents 1. Purpose ････････････････････････････････････････････････････････1

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

eaton el 198

Abstract: PCb board zd lty 2 PCb board zd lty 6 nte quick cross 14305H SMD MARKING CODE ALg 5302H F105 LA 4301 Z851 marking code
Contextual Info: Indicator Lights LED Optoelectronics • Incandescent • Neon For Surface Mount, PC Mount & Panel Mount TABLE OF CONTENTS SECTION 6 SECTION 1 Technical Notes Incandescent Lamps Neon Lamps O ptoelectronics Soldering Neon Glow Lamps 3 6 10 SECTION 2 IDI Product Line

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

MCIMX51RM

Abstract: Reference Manual Samsung eMMC 4.41 hynix emmc toshiba emmc 4.4 spec mp3 player schematic diagram BR A928 Hynix eMMC 4.5 controller AMD z430 nec a1129
Contextual Info: An errata for this document is available. See Document ID#: IMX51RMAD. MCIMX51 Multimedia Applications Processor Reference Manual MCIMX51RM Rev. 1 2/2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: