2X1012 Search Results

INA110KP

Abstract: 2N2222A plastic instrumentation amplifier with offset adjust MPC800 AD524 AD624 INA110 INA110AG INA110BG RG113
Contextual Info: INA110 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK ● AMPLIFICATION OF HIGH IMPEDANCE SOURCES

Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK

photodiode responsivity 1550nm, 1

Abstract: Photodiode, 1550nm NEP photodiode 1550nm nep photodiode 5mm 1550nm photodiode nep 1300nm-1550nm InGaAs Photodiode 1550nm
Contextual Info: Large Area InGaAs p-i-n Photodiode 35PD5M-TO The 35PD5M-TO series of InGaAs photodiodes has a 5mm-diameter photosensitive region. Applications include high sensitivity instrumentation and sensing. Class A devices feature very low dark current and high dynamic impedance. High reliability is assured through planar,

honeywell memory sram

Abstract: hx6408 HXS6408
Contextual Info: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating

Contextual Info: HXSR06432 2M x 32 STATIC RAM The Multi-Chip Module MCM , 2M x 32 Radiation Hardened Static RAM is a high performance 2,097,152 word x 32-bit static random access memory MCM. The SRAM MCM consists of four 512k x 32 SRAM die fabricated with Honeywell’s 150nm silicon-on-insulator CMOS (S150) technology.

ocxo mv89

Abstract: MV89 8.192 Mc 2X101 9243 a STABILITY
Contextual Info: 13a, KIMa Ave., St.Petersburg,199155, RUSSIA. Tel:+7-812-350-9243; 350-4461. Fax:+7-812-350-7290. http://www.morion.com.ru E-mail: sale@morion.com.ru DOUBLE OVEN ULTRA HIGH STABILITY PRECISION OCXO MV89 Features: • High stability vs. temperature - up to ±5x10-11

Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK

TXM11

Contextual Info: 集成晶体振荡器目录 博威集成电路有限公司 ● 晶振电路的生产研发条件 5 ● 质量保证 6 ● 订购表 7 ● 产品概览 8 恒温晶体振荡器 OCXOs ● 命名规则 9 OX14B-T-HU-V-10M OX12A-T-HT-V-40M 晶体 切型 频率温度稳定度

Contextual Info: DOX551 series Double Oven controlled Crystal Oscillator BOWEI INTEGRATED CIRCUITS CO.,LTD. Pin function 1:Frequency control or NC 2:Reference voltage output or NC Features -10 ● High frequency stability ～2*10 ● Good short term stability～2*10-12/S ●

AD524

Abstract: AD624 INA110 INA110AG
Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK

MV142

Abstract: 1x1010
Contextual Info: Features: • High stability vs. temperature - up to ±1x10-10 • Low aging • Low phase noise • Ideal for GPS, CDMA, 3G applications • Frequency range 4.0-20.0 MHz ±1x10-10 Vibrations Frequency range Acceleration Shock Acceleration Duration Humidity @ 25 oC

Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK

DIP 16 DRAWING Advanced Micro Devices

Abstract: 57401j mmi SINGLE SHIP ORGAN INCOMING RAW MATERIAL INSPECTION checklist Defense 5962-85155 MMI PAL14L8 38510 Cross Reference
Contextual Info: M ilitary S p ecialty M em ory Whatever your military data buffering needs, Advanced Micro Devices has the right specialty memory device to fit your applica­ tion. All of our military bipolar and CMOS First-in First-out FIFO memories are fully screened to MIL-STD-883.

VHZ 463

Abstract: nsk Crystal 2N41
Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N E INA110 1 INA110 Fast-Settling FET-lnput INSTRUMENTATION AMPLIFIER APPLICATIONS • FAST SETTLING: 4|is to 0.01% • MULTIPLEXED INPUT DATA ACQUISITION SYSTEM • HIGH CMR: 106dB min; 90dB at 10kHz

TCXO204C

Abstract: 10MHz 1pps shock 130030 TCXO 10MHZ 4 lead
Contextual Info: High Precision Oscillators Rb Oscillators with Built-in GPS Function MCXO-094B Features • Frequency Control Function by GPS. • Highly stable and accurate reference frequency by Rb atom oscillator. • Superior long term stability. • 10MHz-8 output standard.

HXSR01632

Abstract: x-ray cmos S150
Contextual Info: HXSR01632 512K x 32 STATIC RAM Features n Fabricated on S150 SiliconOn-Insulator SOI CMOS n 150 nm Process (Leff = 110 nm) n Read Cycle Times Typical ≤13 ns Worst case ≤ 20 ns n Write Cycle Times Typical ≤ 9 ns Worst case ≤ 12 ns n Asynchronous Operation

cdte

Contextual Info: MCT HgCdTe Photoconductive Detectors (TE-cooled Types) Thermoelectric Cooling Assures Stable Operation Over Extended Time Periods Choice of Spectral Response The band gap of HgCdTe can be modified by controlling the compo­ sition ratio o f HgTe and CdTe. Utilizing this fact, various types are

Contextual Info: High Precision Oscillators Rb Oscillators with Built-in GPS Function MCXO-094B Features • Frequency Control Function by GPS. • Highly stable and accurate reference frequency by Rb atom oscillator. • Superior long term stability. • 10MHz-8 output standard.

Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK

three stage Instrumentation Amplifier

Abstract: INA110AG Power resistor 0,25R transformer pulse 6 pin 500v AD524 AD624 INA110 ad624 application ad524 application
Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK

AD524

Abstract: AD624 INA110 INA110AG JEDEC Drawing MO-006 dsp relay A0301
Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK

MV83M

Contextual Info: Features: x Excellent short-term stability x High stability/Excellent phase noise x Low power consumption x Low aging x Wide choice of packages x Frequencies 5.0 & 10.0 MHz Frequency option 5.0 MHz 10.0 MHz ORDERING GUIDE: MV83M – C 10 F – Z – 5.0 MHz

ocxo mv180

Abstract: MV180 5MHz OCXO ocxo 10MHz ocxo 10MHz 12v
Contextual Info: DOUBLE OVEN LOW PROFILE ULTRA PRECISION OCXO MV180 • · · · Features: Low sensitivity to rapid changes of ambient temperature Low profile package with the height of 19 17 mm High stability vs. temperature - up to ±1x10-10 Available as RoHS Package type

Contextual Info: DOX551系列 双层恒温晶体振荡器 博威集成电路有限公司 性能特点 引脚功能 ● 高温度稳定度 ～2*10 3 ● 优良短稳特性 ～2*10-12/S 2 ● SC切晶体 ● -10 2：空或参考电压输出端 3：信号输出端 5 1 低老化率～2*10-10/日