2X512KX32 Search Results

AM29LV004T

Abstract: EDI7F33512V
Contextual Info: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: EDI7F33512C White Electronic Designs 512Kx32 FLASH FIG.1 BLOCK DIAGRAMS The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are

AM29LV004T

Abstract: EDI7F33512V eco 9230
Contextual Info: EDI7F33512V SEDI, 512Kx32 Flash ELECTRONIC DESIGNS, IN C I 512Kx32 Flash Block Diagrams The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in

AM290F040

Contextual Info: White Electronic Designs EDI7F33512C 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM290F040 Flash Device Fast Read Access Time - 80-150ns 5V Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each

512k x 8 chip block diagram

Abstract: AMD 705 AM29LV004T EDI7F33512V
Contextual Info: White Electronic Designs EDI7F33512V 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM29LV004T Flash Device Fast Read Access Time - 80ns 3V Only Reprogramming Flexible, Sector Architecture One 16Kbyte, two 8Kbyte, one 32Kbyte and

Contextual Info: WHITE M IC R O E L E C T R O N IC S 2x512Kx32 5V FLASH SIM M WPF1M32A-90PSC5 PRELIMINARY* FEATURES • A ccess Tim e o f 90ns ■ ■ Packaging: ■ Organized as tw o banks o f 512Kx32 • 80-pin S IM M ■ C om m ercial T e m pe ratu re Range • The m odule is m a nufa cture d w ith e ig h t 512Kx8 CMOS

332 Ic 8 pin

Abstract: 4X512K ic 331
Contextual Info: ^EDI E D I7F33S 12C 512Kx32 Flash EL£CTRONC CESGN& M C I Features 512Kx32 Flash Module 2,4,8 megabyte CMOS Flash Module Family Organization: 512Kx32 2x512Kx32 4x512Kx32 Fast Read Access Time-80ns Five Volt Only Reprogramming Internal Program Control and Timer

367 al

Abstract: CQ31 9020 11 ak 30 a4 51b7 Amos Flash SIMM 80 AM29F040 EDI7F33512C
Contextual Info: ^EDI EDI7F33512C 512KX32 Flash ELECTRONIC DESIGNS INC 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP Block Diagrams

PD2743

Abstract: WPF1M32A-90PSC5 80pin-SIMM AO523
Contextual Info: I/VHITE M IC R O E L E C T R O N IC S 2x512Kx32 5V FLASH S IM M WPF1M32A-90PSC5 P R E L IM IN A R Y * FEATURES • Access Time of 90ns ■ 100,000 Erase/Program Cycles ■ Packaging: ■ Organized as two banks of 512Kx32 • 80-pin S IM M ■ Commercial Temperature Range

Q180

Contextual Info: MITSUBISHI MEMORY CARD D YN A M IC RAM CARDS M F14M 1-J57A TXX 2x512Kx32bit D R A M Card Connector Type T w o -p iece 88-pin DESCRIPTION These D R A M C A R D s have been developed based on J E I D A D R A M C A R D G U I D E L I N E V e r . 2.1. T hese c a rd s a re m a d e u s in g in d u s t r y s t a n d a r d 512K

Contextual Info: W DI EDI7F33512V 512Kx32 Flash ELECTRONIC DESIGNS, IN C I 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in Block Diagrams

Contextual Info: EDI7F33512C 512Kx32 Flash DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: MITSUBISHI M EM O RY CARD D Y N A M IC R A M CAR D S 2x512Kx32bit D R A M Card MF14M1-J57ATXX Connector Type T w o -p ie c e 8 8 -p in D E S C R IP T IO N T hese D R A M C A R D s have been developed based on J E I D A D R A M C A R D G U ID E L IN E V er.2.1.

AM29LV004T

Abstract: EDI7F33512V
Contextual Info: EDI7F33512V 512Kx32 Flash 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4

Flash SIMM 72 29F040

Contextual Info: 2x512Kx32 5V FLASH S IM M p r e l im in a r y * FEATURES • Access Time of 90ns ■ 100,000 Erase/Program Cycles ■ Packaging: ■ Organized as tw o banks of 512Kx32 • 80-pin S I M M ■ Commercial Temperature Range • The module is manufactured w ith eight 512Kx8 C M O S

Contextual Info: MITSUBISHI M EM O R Y CARD D Y N A M I C R A M CARDS 2x512Kx32à/f DRAM Card 1x512/fx32ô/Y DRAM Card MF12M1-J57ATXX " MF14M1-J57ATXX Connector Type Two-piece 88-p in D E S C R IP T IO N m o d e a n d Page m o d e f u n c t io n s a re a v a ila b le . These D R A M C A R D s have been developed based on

j2829

Contextual Info: WPF1M32A-90PSC5 M/HITE / M I C R O E L E C T R O N I C S 2x512Kx32 5V FLASH S IM M PRELIM INARY * FEATURES • Access Tim e of 90ns ■ 100,000 Erase/Program Cycles ■ Packaging: ■ Organized as tw o banks of 512Kx32 • 80-pin S IM M ■ Comm ercial Tem perature Range

1.5528

Abstract: EDI7F33512C AM29F040 2192
Contextual Info: EDI7F33512C 512Kx32 Flash DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

AM29F040

Abstract: EDI7F33512C
Contextual Info: EDI7F33512C 512Kx32 Flash 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

AM29LV004T

Abstract: EDI7F33512V
Contextual Info: White Electronic Designs EDI7F33512V 512Kx32 FLASH FEATURES DESCRIPTION „ 512Kx32, 2x512Kx32 and 4x512Kx32 Densities „ Based on AMDs - AM29LV004T Flash Device „ Fast Read Access Time - 80ns „ 3V Only Reprogramming The EDI7F33512, EDI7F233512 and EDI7F433512 are

Contextual Info: ^EDI EDI7F33512C 512KX32 Flash ELECTRONIC DESIGNS INC. 512Kx32 Flash The EDI7F33512, E D17F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP Block Diagrams

Contextual Info: White Electronic Designs EDI7F33512C 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM290F040 Flash Device Fast Read Access Time - 80-150ns 5V Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each

AM290F040

Abstract: F3351 512KI x8 F335-12 f33512
Contextual Info: WDÌ EDI7F33512C 512Kx32Flash ELECTRONICDESJGW S.INC. 512Kx32 Flash TheE DI7F3351 EDI7F233512 and E DI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32respectively.Themodulesarebasedon AMD’s AM29F040-512Kx8 Flash Device in TSOP EDI7F33512CSNC