29F040 Search Results

flash hamming ecc

Abstract: 29F0408RP radiation solid state recorder
Contextual Info: SPACE ELECTRONICS INC. FLASH MEMORY S PACE PRODUCTS 29F0408RP DESCRIPTION: • Single 5.0V supply • Organization: - Memory cell array: 4M + 128k bit x 8bit - Data register: (512 + 16)bit x 8bit • Automatic program and erase - Page program: (512 + 16)Byte

Contextual Info: -Preliminary- 29F0408RP FLASH MEMORY RADIATION HARDENED FEATURES: DESCRIPTION: • Single 5.0 volt Supply • Organization - Memory Cell Array: 4M + 128K bit x 8bit - Data Register: (512 + 16)bit x8bit • Automatic Program and Erase - Page Program: (512 + 16)Byte

sample code read the flash memory manufacture id

Abstract: 29F0408
Contextual Info: PRELIMINARY 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash

Am29F040

Contextual Info: Data Sheet 124376 FlashLite Byte-W ide M em ory C a rd — A M D A M 29F040 JUNE 95 REV A Product Features • Thin Profile— PCMCIA Type I Package, 3.3 mm Thick ■ Memory Capacity of 512 KByte, based on AMD 29F040 Flash Technology ■ Eight Equal Size Sectors of 64 KBytes each

atmel 718

Abstract: 28SF040 sst flash memory amd 29f040 29C040 29F040 SST28SF040
Contextual Info: SST28SF040–Compatibility Considerations Between 4 Megabit Flash Products Application Note INTRODUCTION The SST 28SF040, Atmel 29C040 and AMD 29F040 are not 100% Program and Erase compatible for several reasons. 1. SST and AMD devices require a separate Erase

1N914

Abstract: M29F040 PLCC32 TSOP32 w431 w631
Contextual Info: S G S -T H O M S O N i[Ui EïïïïM]D(ES M 29F040 4 Mb (512K x 8, Block Erase SING LE SUPPLY FLASH M EM O RY • 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10ps typical ■ ERASE TIME

29F0408

Contextual Info: 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash

27C32

Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
Contextual Info: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512

29VF040

Abstract: 29VF040-15 29VF040-12 29VF040-10
Contextual Info: TMS29LF040, TMS29VF040 524288 BY 8-BIT FLASH MEMORIES SMJSB25C - SEPTEMBER 199S - REVISED NOVEMBER \m Single Power Supply 3.3 V ± 0.3 V - '29LF040 2.7 V to 3.6 V - ’29VF040 5 V ± 10% - See 29F040 Data sheet Literature Number SMJS820 Organization. . . 524288 By 8 Bits

Contextual Info: 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash

Contextual Info: 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash

00JJ

Abstract: M29F040 PLCC32 TSOP32 31AY
Contextual Info: SGS-THOMSON OMDGKMDI[LI uTS IRQDOS M 29F040 4 Mb 512K x 8, Block Erase SING LE SUPPLY FLASH M EM O RY • 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10jxs typical ■ ERASE TIME

Contextual Info: /S T *7 # S G S -T H O M S O N ^Q g®(Q [I[L[i TO®KilO(gi M 29F040 SINGLE SUPPLY 4 Megabit (512Kx 8, Sector Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5 V ± 10% SUPPLY VOLTAGE in READ

29f040b

Abstract: C167 flash programming programming 29F400 amd 29F010 flash memory C167 flash program flash 29f400 ROM. In-system programming c167 programming c166 TC75074 MCB167-NET
Contextual Info: Application Note Use External Flash ROM on the MCB167-NET APNT_169 OVERVIEW The Keil MCB167-NET board may be equipped with two 29F040B Flash devices that provide 1MB ROM. In-system programming is possible via the COM interface of the MCB167-NET. This application notes comes with an example project and shows you how to program such Flash

29f040b

Contextual Info: ?'RE ! AM DB A m 29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics H 5.0 V ± 10% for read and write operations — Minimizes system level power requirements • Manufactured on 0.35 Jim process technology

Contextual Info: 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash

s29f

Contextual Info: 29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '

Contextual Info: 29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

80c42

Abstract: 82C42 siemens J146 80c42c 82c42 via cga to vga converter circuits siemens s35 lcd smd 39a diode zener B34AB amd elan sc300
Contextual Info: Module Élan386_3 FORTH-SYSTEME GmbH Postfach 11 03 Küferstr. 8 l D-79200 Breisach a. Rhein l D-79206 Breisach a. Rhein 07667 908-0lFax ( Module Élan386_3 (C) Copyright 1998: FS FORTH-SYSTEME GmbH Postfach 1103

29LV800

Abstract: 29f016 29f400 29F040
Contextual Info: Common Flash Interface Version 1.4 Vendor Specific Extensions Application Note Introduction This application note provides an overview of the changes implemented between versions 1.3 and 1.4 of the SpansionTM Flash memory Common Flash Interface CFI implementation.

Contextual Info: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce

T1A16

Abstract: 29LV116
Contextual Info: A M D ÎI Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and

29LV033C

Contextual Info: ADVANCE INFORMATION AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce