3/SEMICONDUCTOR GAMMA RADIATION DETECTOR Search Results

Contextual Info: UM9441 PIN RADIATION DETECTORS temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on devices of the UM9441 design show no

UM9441

Contextual Info: UM9441 PIN RADIATION DETECTORS KEY FEATURES DESCRIPTION temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on

60Co

Contextual Info: CHAPTER 7 SCINTILLATION COUNTING Radiation of various types is widely utilized for non-destructive inspection and testing such as in medical diagnosis, industrial inspection, material analysis and other diverse fields. In such applications, radiation detectors play an important role. There are various methods

UM9441

Abstract: FX-25
Contextual Info: PIN RADIATION DETECTORS Features • • • • • • High Photocurrent Sensitivity High Reliability Construction Fast Rise Time Wide Dynamic Range Hardness to Neutron Bombardment Low Operating Voltage Description Silicon PIN devices are effective detectors

Semiconductor Nuclear Radiation Detector

Abstract: fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector
Contextual Info: National Semiconductor Application Note 926 Michael Maher January 1994 INTRODUCTION Today’s rapidly changing global political climate is significantly impacting the military strategies of Free World countries Important decisions are being made regarding each

Contextual Info: PIN RADIATION DETECTORS Features • High Photocurrent Sensitivity • High Reliability Construction • Fast Rise Time • Wide Dynamic Range • Hardness to Neutron Bombardment • Low Operating Voltage Description Silicon PIN devices are effective detectors

circuit diagram blood gas analyzer

Abstract: Light Detector laser
Contextual Info: CHAPTER 14 APPLICATIONS Photomultiplier tubes PMTs are extensively used as photodetectors in fields such as chemical analysis, medical diagnosis, scientific research and industrial measurement. This chapter introduces major applications of photomultiplier tubes and describes the principle and

Selection guide

Abstract: United Detector Technology PSD
Contextual Info: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable

Alps 934a vco

Contextual Info: The following set of frequently asked questions concerns the radiation and operational performance of National Semiconductor’s LMX2305WG-MLS, LMX2315WG-MLS, and LMX2325WG-MLS space level phase lock loop devices. The non radiation specific information pertains to both the –QML military and

5962F9764101VEA

Abstract: 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS-6254RH HS9-6254
Contextual Info: HS-6254RH Data Sheet August 1999 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides

smd transistor 304

Abstract: cdfp4-f16
Contextual Info: HS-6254RH Semiconductor Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,

proton rx 4000 watts power amplifier circuit diagram

Abstract: Hamamatsu r300 0812E H5783
Contextual Info: PHOTOMULTIPLIER TUBES Basics and Applications THIRD EDITION Edition 3a PHOTON IS OUR BUSINESS 2007 HAMAMATSU PHOTONICS K. K. ▲ Photomultiplier Tubes ▲ Photomultiplier Tube Modules © 2007 HAMAMATSU PHOTONICS K. K. Introduction Light detection technolgy is a powerful tool that provides deeper understanding of more sophisticated

2N2369 avalanche

Abstract: Microsemi micronote series 050 Semiconductor Nuclear Radiation Detector DIODE ga101 pin diodes radiation detector UM9441 Microsemi Generic Diode nuclear radiation detector diode GA100 radiation ionizing dose TID detector
Contextual Info: Spring 1998 MicroNote Series 050 by Kent Walters, Microsemi Scottsdale Radiation Hardened Performance of Discrete Semiconductors Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military

CDFP4-F24

Abstract: CDIP2-T18 CMM5104 CMM5104D1DZ CMM5104D3 CMM5104K1DZ CMM5104K3 r2a5
Contextual Info: CMM5104 Radiation Hardened, High Reliability, CMOS/SOS 4096 Word by 1-Bit LSI Static RAM November 1995 Pinouts Features 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835, CDIP2-T18 TOP VIEW • Radiation Hardened to 10K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

HS1-2420RH-Q

Abstract: HS-2420RH
Contextual Info: HS-2420RH Radiation Hardened Fast Sample and Hold July 1995 Features Description • Maximum Acquisition Time The HS-2420RH is a radiation hardened monolithic circuit consisting of a high performance operational amplifier with its output in series with an ultra-low leakage analog switch

ultrasonic 40 khz transducer

Abstract: RCA photomultiplier mk-109 Ultrasonic Transducer application notes ultrasonic transducer excitation circuit lvdt accelerometer Schaevitz accelerometer lvdt accelerometer sensor ultrasonic transducer drive circuits LVDT strain gauge displacement transducer
Contextual Info: A substantial amount of information is available on signal conditioning for common transducers. Fortunately, most of these devices, which are used to sense common physical parameters, are relatively easy to signal condition. Further, most transducer-based measurement requirements are well

Contextual Info: HS-2420RH Semiconductor Radiation Hardened Fast Sam p le and Hold juiy 1995 Features Description • Maximum Acquisition Time The HS-2420RH is a radiation hardened monolithic circuit consisting of a high performance operational amplifier with its output in series with an ultra-low leakage analog switch

RCA photomultiplier

Abstract: 2n2222 h 331 mk-109 ultrasonic 40 khz transducer ultrasonic transducer excitation circuit ultrasonic transducer drive circuits Schaevitz accelerometer MK109 schematic ultrasonic distance meter LVDT sensor for aerospace
Contextual Info: National Semiconductor Application Note 301 January 1982 A substantial amount of information is available on signal conditioning for common transducers Fortunately most of these devices which are used to sense common physical parameters are relatively easy to signal condition Further

ON semiconductor image sensor

Contextual Info: NOIS1SM0250A STAR250 250K Pixel Radiation Hard CMOS Image Sensor Features Applications • 512 x 512 active pixels ■ Satellites ■ 25 m pixel size ■ Spacecraft monitoring ■ 1 inch optical format ■ Nuclear inspection ■ Up to 30 frames per second fps at full resolution

Contextual Info: NOIS1SM0250A STAR250 250K Pixel Radiation Tolerant CMOS Image Sensor Features • • • • • • • • • • • • • • • • 512 x 512 Active Pixels 25 mm Pixel Size 1 inch Optical Format Up to 30 Frames per Second fps at Full Resolution

shadow photodiode

Abstract: NOIS1SM0250A 114AK-01 JLDCC84 image sensor star tracker STAR250 star tracker video section meaning
Contextual Info: NOIS1SM0250A STAR250 250K Pixel Radiation Tolerant CMOS Image Sensor Features • • • • • • • • • • • • • • • • 512 x 512 Active Pixels 25 mm Pixel Size 1 inch Optical Format Up to 30 Frames per Second fps at Full Resolution

CCD and CID Technology

Abstract: CCTV DISTRIBUTION NETWORK single line diagram transistor AN132 AN132 ITU-601 RS-170 RS-343 CCTV DISTRIBUTION NETWORK diagram eye refraction system CCTV pinhole infrared
Contextual Info: AN132 Application Note IMAGING TERMS 1/2 Inch CCD: A CCD measuring 1/2 inch along the diagonal across the photosensitive array. 1/3 Inch CCD: A CCD measuring 1/3 inch along the diagonal across the photosensitive array. 1/4 Inch CCD: A CCD measuring 1/4 inch along the diagonal across

BA-914

Abstract: NOIS1SM0250A 114AK JLDCC84 shadow photodiode an5256 ADC hard radiation T15T STAR-250
Contextual Info: NOIS1SM0250A STAR250 250K Pixel Radiation Tolerant CMOS Image Sensor Features • • • • • • • • • • • • • • • • 512 x 512 Active Pixels 25 mm Pixel Size 1 inch Optical Format Up to 30 Frames per Second fps at Full Resolution

JLDCC84

Contextual Info: NOIS1SM0250A STAR250 250K Pixel Radiation Tolerant CMOS Image Sensor Features • • • • • • • • • • • • • • • • 512 x 512 Active Pixels 25 mm Pixel Size 1 inch Optical Format Up to 30 Frames per Second fps at Full Resolution