SIMM 30-pin
Abstract: 30 SIMM 30 pin SIMM socket 30 pin
Text: SINGLE IN-LINE TYPE MODULE 30 PIN PLASTIC MSS-30P-P04 30-pin plastic SIMM socket type Lead pitch 50mil Motherboard material Plastic Mounted package material Plastic Pin plating Solder (MSS-30P-P04) 30-pin plastic SIMM (socket type) (MSS-30P-P04) 88.90±0.13(3.500±.005)
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MSS-30P-P04
50mil
30-pin
MSS-30P-P04)
SIMM 30-pin
30 SIMM
30 pin SIMM socket
30 pin
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SIMM 30-pin
Abstract: p03 transistor MSS-30P-P03 30-pin
Text: SINGLE IN-LINE TYPE MODULE 30 PIN PLASTIC MSS-30P-P03 Lead pitch 50mil Motherboard material Plastic Mounted package material Plastic Pin plating Solder 30-pin plastic SIMM socket type (MSS-30P-P03) 30-pin plastic SIMM (socket type) (MSS-30P-P03) 88.90 ±0.13(3.500 ±.005)
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MSS-30P-P03
50mil
30-pin
MSS-30P-P03)
SIMM 30-pin
p03 transistor
MSS-30P-P03
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simm 30-pin 9-bit
Abstract: 30-pin 9-bit ram module 30-pin simm memory dynamic TM4100EAD9 TMS44100
Text: TM4100EAD9 4194304 BY 9-BIT DYNAMIC RAM MODULE SMMS419C – NOVEMBER 1991 – REVISED JUNE 1995 D D D D D D D D D D D D Organization . . . 4 194 304 x 9 Single 5-V Power Supply ±10% Tolerance 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets
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Original
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TM4100EAD9
SMMS419C
30-Pin
4100EAD9-60
4100EAD9-70
4100EAD9-80
simm 30-pin 9-bit
30-pin 9-bit ram module
30-pin simm memory dynamic
TM4100EAD9
TMS44100
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TM4100EAD9
Abstract: TMS44100 simm 30-pin 9-bit
Text: TM4100EAD9 4194304 BY 9-BIT DYNAMIC RAM MODULE SMMS419C – NOVEMBER 1991 – REVISED JUNE 1995 D D D D D D D D D D D D Organization . . . 4 194 304 x 9 Single 5-V Power Supply ±10% Tolerance 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets
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Original
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PDF
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TM4100EAD9
SMMS419C
30-Pin
4100EAD9-60
4100EAD9-70
4100EAD9-80
TM4100EAD9
TMS44100
simm 30-pin 9-bit
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30-pin simm memory "16m x 8"
Abstract: No abstract text available
Text: STI916100 30-PIN SIMMS 1 6 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI916100 is a 16M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI916100 consist of nine CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A
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STI916100
30-PIN
STI916100
24-pin
STI916100-xxT)
STI916100-xxG)
30-pin simm memory "16m x 8"
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30-pin simm memory "16m x 8"
Abstract: 30-pin simm memory 30-pin SIMM RAM
Text: 30-PIN SIMMS STI816100 16M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI816100 is a 16M bit x 8 Dynamic RAM high density memory module. The Simple Technology STI816100 consist of eight CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A
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STI816100
30-PIN
STI816100
24-pin
STI816100-xxT)
STI816100-xxG)
30-pin simm memory "16m x 8"
30-pin simm memory
30-pin SIMM RAM
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Untitled
Abstract: No abstract text available
Text: STI84000A 30-PIN SIMMS 4M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI84000A is a 4M bii: x 8 Dynamic RAM high density memory module. The Simple Technology STI84000A consist of two CMOS 4M x 4 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A 0.1 ^F
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STI84000A
STI84000A-60
STI84000A-70
STI84000A-80
110ns
130ns
150ns
30-PIN
STI84000A
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EADS-80
Abstract: No abstract text available
Text: TM4100EAD9 4194304 BY 9-BIT DYNAMIC RAM MODULE SMMS419C - NOVEMBER 1991 - REVISED JUNE 1995 Organization . . . 4194304 x 9 SINGLE IN-LINE MODULE Single 5-V Power Supply ±10% Tolerance (TOP VIEW) 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets
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OCR Scan
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TM4100EAD9
SMMS419C
30-Pin
4100EAD9-60
4100EAD9-70
4100EAD9-80
EADS-80
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Untitled
Abstract: No abstract text available
Text: 30-PIN SIMMS STI91000 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000 is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91000 consist of nine CMOS 1M x 1 DRAMs in 20-pin SOJ package
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STI91000
STI91000-60
STI91000-70
STI91000-80
110ns
130ns
150ns
30-PIN
STI91000
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TM4100GAD8
Abstract: No abstract text available
Text: TM4100GAD8 4194 304 BY 8-BIT DYNAMIC RAM MODULE SMMS508A-MARCH 1992-REVISED JANUARY 1993 * Organization. 4 194 304 x8 * Single 5-V Power Supply ±10% Tolerance * 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets * Utilizes Eight 4-Megabit Dynamic RAMs in
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TM4100GAD8
SMMS508A-MARCH
1992-REVISED
30-Pin
4100GAD8-60
410OGAD8-70
4100GAD8-80
1992-REVISEO
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30-pin SIMM RAM
Abstract: No abstract text available
Text: STI94000 30-PIN SIMMS 4M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI94000 is a 4M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI94000 consist of nine CMOS 4 M x 1 DRAMs in 20-pin SOJ package
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STI94000
30-PIN
110ns
130ns
150ns
STI94000
20-pin
30-pin SIMM RAM
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SIMM 30-pin
Abstract: No abstract text available
Text: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is a fast-page 4,194,304-word by 8-bit 30-Pin Leaded SIMM dynam ic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir
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MC-424100A8
304-word
uPD424100
30-Pin
MC-424100A8
SIMM 30-pin
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KMM591000C8
Abstract: KMM591000C KMM591000C7 KMM591000C-7
Text: KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000C is a 1M b itx 9 Dynamic RAM high density memory module. The Samsung KMM591000C consist of nine KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM591000C
110ns
130ns
150ns
KMM591000C
KM41C1000C
20-pin
30-pin
KMM591000C8
KMM591000C7
KMM591000C-7
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Untitled
Abstract: No abstract text available
Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM594000A
130ns
150ns
180ns
KMM594000A
30-pin
KM41C4000AJ
20-pin
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KMM584000A
Abstract: km41c4000aj
Text: KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KMM584000A consist of eight KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM584000A
KMM584000A
KM41C4000AJ
20-pin
30-pin
KMM584000A-
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Untitled
Abstract: No abstract text available
Text: KMM581000C DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000C is a 1M b it x 8 Dynamic RAM high density memory module. The Samsung KMM581000C consist of eight KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM581000C
KMM581000C-6
KMM581000C-7
KMM581000C-8
110ns
130ns
150ns
KMM581000C
KM41C1000C
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30-pin simm memory
Abstract: 30-pin SIMM RAM TTL 30pin
Text: STI84000 30-PIN SIMMS 4M X 8 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: Wc ^CAC ^RC STI84000-60 60ns 15ns 110ns STI84000-70 70ns 20ns 130ns STI84000-80 80ns 20ns 150ns Fast Page Mode operation CAS-before-RAS refresh capability
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STI84000
STI84000-60
STI84000-70
STI84000-80
30-PIN
STI84000
20-pin
30-pin simm memory
30-pin SIMM RAM
TTL 30pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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OCR Scan
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KMM584000A
84000A-
84000A-10
100ns
130ns
150ns
180ns
84000A
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SS1000
Abstract: KMM581000B
Text: KMM581000B DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581OOOB consist of eight KM41C1OOOBJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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OCR Scan
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KMM581000B
581000B
KMM581OOOB
KM41C1OOOBJ
20-pin
30-pin
581000B-
KMM581
SS1000
KMM581000B
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SIMM 30-pin
Abstract: TM497GU8 30-pin simm memory TMS417400 TMS417400DJ
Text: TM497GU8 4194394-WORD BY 8-BIT DYNAMIC RAM MODULE S M M S498-A PR IL 1994 Organization . . . 4194304 x 8 U SINGLE-IN-LINE PACKAGE TOP VIEW Single 5-V Power Supply (±10% Tolerance) 30-Pin Single-In-Line Memory Module (SIMM) for Use With Sockets VCC CAS DQ1
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TM497GU8
4194394-WORD
SMMS498-APRIL
30-Pin
16-Megabit
497GU8-60
497GU8-70
497GU8-80
R-PSIP-N30
SIMM 30-pin
30-pin simm memory
TMS417400
TMS417400DJ
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333z
Abstract: 333z capacitor 00A80
Text: STI91OOOA 30-PIN SIMMS 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000A is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91 OOOA consist of two CMOS 1M x 4 DRAMs in 20-pin SOJ package and one CMOS 1M x 1 DRAM in 20-pin SOJ package
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STI91OOOA
STI91000A-60
STI91000A-70
STI91000A-80
110ns
130ns
150ns
30-PIN
STI91000A
STI91
333z
333z capacitor
00A80
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KMM584000
Abstract: KM41C4000J
Text: KM M584000 DRAM MODULES 4 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000 is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung KMM584000 consist of eight KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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OCR Scan
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M584000
KMM584000-8
KMM584000-10
100ns
150ns
180ns
KMM584000
KM41C4000J
20-pin
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dram simm memory module samsung 30-pin 16M
Abstract: No abstract text available
Text: KMM5916100/T DRAM MODULES 16Mx9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59161QG/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung «1^5916100^ consist of nine KM41C16100/T DRAMs in 24-pin SOJ/TSOP II packages mounted on a 30-pin
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KMM5916100/T
16Mx9
KMM59161QG/T
KM41C16100/T
24-pin
30-pin
KMM5916100/T
KMM5916100-6
KMM5916100-7
dram simm memory module samsung 30-pin 16M
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YL-69
Abstract: No abstract text available
Text: NEC Electronics Inc. MC-421000A9 1,048,576 X 9-Bit Dynamic CMOS RAM Module Description Pin Configurations The M C-421000A9 is a fas t-p a g e 1,048,576-word by 9-bit dynam ic RAM m odule designed to o perate from a single + 5-volt pow er supply. 30-Pin Leaded SIMM MC-421000A9A/AA/AB
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MC-421000A9
C-421000A9
576-word
30-Pin
MC-421000A9A/AA/AB)
/JPD421000)
/L/PD424400)
YL-69
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