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    KM41C1000C Search Results

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    KM41C1000C Price and Stock

    Samsung Semiconductor KM41C1000CJ-7

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    Bristol Electronics KM41C1000CJ-7 40
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    Quest Components KM41C1000CJ-7 299
    • 1 $10.5
    • 10 $10.5
    • 100 $6.475
    • 1000 $5.775
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    KM41C1000CJ-7 30
    • 1 $10.5
    • 10 $5.25
    • 100 $5.25
    • 1000 $5.25
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    Samsung Semiconductor KM41C1000CP-8

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    Bristol Electronics KM41C1000CP-8 20
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    Samsung Semiconductor KM41C1000CZ7

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    Bristol Electronics KM41C1000CZ7 11
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    SEC (USE SAMSUNG ELECTRONIC) KM41C1000CP-7

    IC,DRAM,FAST PAGE,1MX1,CMOS,DIP,18PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM41C1000CP-7 32
    • 1 $3.57
    • 10 $2.38
    • 100 $1.785
    • 1000 $1.785
    • 10000 $1.785
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    Samsung Semiconductor KM41C1000CP-7

    IC,DRAM,FAST PAGE,1MX1,CMOS,DIP,18PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM41C1000CP-7 30
    • 1 $3.57
    • 10 $2.38
    • 100 $1.785
    • 1000 $1.785
    • 10000 $1.785
    		Buy Now
    KM41C1000CP-7 4
    • 1 $5.1
    • 10 $3.4
    • 100 $3.4
    • 1000 $3.4
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    Find more KM41C1000C price and stock on Findchips.com

    KM41C1000C Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM41C1000C-6 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C1000C-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C1000C-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C1000CG-6 Sharp 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM41C1000CG-7 Sharp 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM41C1000CG-8 Sharp 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM41C1000CJ-6 Sharp 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM41C1000CJ-7 Sharp 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM41C1000CJ-8 Sharp 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM41C1000CL-6 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C1000CL-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C1000CL-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C1000CP-6 Sharp 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM41C1000CP-7 Sharp 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM41C1000CP-8 Sharp 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM41C1000CSL-6 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C1000CSL-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C1000CSL-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C1000CT-6 Sharp 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM41C1000CT-7 Sharp 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF

    KM41C1000C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    41C1000

    Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
    Text: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000C KM41C1000C 576x1 KM41C1000C-6 KM41C1000C-7 KM41C100 20-LEAD 41C1000 KM41C1000CJ-7 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7

    1000CLP

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 KM41C1000CL-7 KM41inued) 20-LEAD 1000CLP

    Untitled

    Abstract: No abstract text available
    Text: KMM581000C DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000C is a 1M b it x 8 Dynamic RAM high density memory module. The Samsung KMM581000C consist of eight KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM581000C KMM581000C-6 KMM581000C-7 KMM581000C-8 110ns 130ns 150ns KMM581000C KM41C1000C

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns GD1S412

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    41c1000

    Abstract: AS11D KM41C1000CP
    Text: KM41C1OOOC/CL/CSL CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM41C1000C/CL/CSL-6 tR A C tC A C tR C 60ns 15ns 110ns KM41C1000C/CL/CSL-7 70ns 20ns 130ns KM41C1000C/CLÆSL-8 80ns 20ns 150ns •


    OCR Scan     		PDF KM41C1OOOC/CL/CSL KM41C1000C/CLVCSL KM41C1000C 20-LEAD 41c1000 AS11D KM41C1000CP

    km41c1000cj-6

    Abstract: KM41C1000C-7 KM41C1000C-6 m4lc KM41C1000CJ-7 KM41C1000CP KM41C1000CJ
    Text: CMOS DRAM KM41C1000C 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000C KM41C1000C-6 KM41C1000C-7 KM41C1000C-8 110ns 130ns 150ns KM41C1000C 576x1 km41c1000cj-6 m4lc KM41C1000CJ-7 KM41C1000CP KM41C1000CJ

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000CSL KM41C1000CSL 576x1 KM41C1000CSL-6 110ns KM41C1000CSL-7 130ns KM41C1000CSL-8 150ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000C KM41C1000C 576x1 KM41C1000C-7 130ns KM41C1000C-8 KM41C1000C-6 150ns 20-LEAD

    KMM591000C8

    Abstract: KMM591000C KMM591000C7 KMM591000C-7
    Text: KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000C is a 1M b itx 9 Dynamic RAM high density memory module. The Samsung KMM591000C consist of nine KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM591000C 110ns 130ns 150ns KMM591000C KM41C1000C 20-pin 30-pin KMM591000C8 KMM591000C7 KMM591000C-7

    Untitled

    Abstract: No abstract text available
    Text: KM41C1000CSL CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000CSL KM41C1000CSL 576x1 KM41C1000CSL-6 KM41C1000CSIC 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: b?E J> m SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 0Ü1S3ÖG SS3 KM41C1000C CMOS DRAM 1Mx1 Bit C M O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e ra n g e : T h e S am sung KM41C1000C is a C M O S high speed 1,048,576x1 D ynam ic R andom A ccess M emory. Its


    OCR Scan     		PDF KM41C1000C KM41C1000C 576x1 110ns KM41C1000C-7 130ns KM41C1000C-8 KM41C1000C-6 150ns

    KM41C1000CJ-6

    Abstract: KM41C1000cJ-7 KM41C1000C-6 KM41C1000C-8 KM41C1000CP-6 KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP-7
    Text: SAMSUNG E L E C TRONICS INC b?E ]> • 7=îtim42 0G153Ö0 553 I SMGK KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF b4142 KM41C1000C KM41C1000C-6 110ns KM41C1000C-7 130ns KM41C1000C-8 150ns 256Kx4 KM41C1000CJ-6 KM41C1000cJ-7 KM41C1000CP-6 KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP-7

    KM41C1000CLP

    Abstract: KM41C1000CLJ DRAM 18DIP KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 Scans-001144 samsung hv capacitor
    Text: SAMSUNG ELECTRONICS INC b7E T> 7RbMmH 00153^7 flS7 • CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM41C1000CL KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns 200fiA cycle/64ms 256Kx4 KM41C1000CLP KM41C1000CLJ DRAM 18DIP Scans-001144 samsung hv capacitor

    DRAM 18DIP

    Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
    Text: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 KM41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its


    OCR Scan     		PDF KM41C1000CSL KM41C1000CSL-6 110ns KM41C1000CSL-7 130ns KM41C1000CSL-8 150ns 100fiA 100/A cycle/128ms DRAM 18DIP DRAM 256kx4

    Untitled

    Abstract: No abstract text available
    Text: KM41C1OOOC/CL/CSL CMOSDRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM41C1000C/CL/CSL-6 60ns 15ns 110ns KM41C1000C/CL/CSL-7 70ns 20ns 130ns KM41C1000C/CL/CSL-8 80ns 20ns 150ns • Fast Page Mode operation


    OCR Scan     		PDF KM41C1OOOC/CL/CSL KM41C1000C/CL/CSL-6 110ns KM41C1000C/CL/CSL-7 130ns KM41C1000C/CL/CSL-8 150ns cycle/64ms cycle/128ms 60/70/80ms)

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The S am sung KM41C1000CL is a CMOS high speed 1,048,576x1 D ynam ic Random A cce ss M em ory. Its design is o p tim ized fo r high perform ance ap p lica tio n s


    OCR Scan     		PDF KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E ]> 7 = ^ 4 1 4 2 0 0 1 5 4 1 4 7bb H S f l G K CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM41C1000CSL KM41C1000CSL 576x1 KM41C1000CSL-6 110ns 130ns KM41C1000CSL-8 KM41C1000CSL-7 150ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAJ1SUNG ELECTRONICS INC b7E ]> • V^bNlMS DOISOTI bTb ■ S flG K KMM591020BN DRAM MODULES 1Mx9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591020BN. is a 1M b itsx9 Dynamic RAM high density memory module. The Samsung KMM591020BN


    OCR Scan     		PDF KMM591020BN KMM591020BN. KM44C1000BLJ-1Mx4) 20-pin KM41C1000CLJ1Mx1) 30-pin 22/xF KMM591020BN-6

    KM44C1000CJ

    Abstract: KMM5361000C
    Text: DRAM MODULE 4 Mega Byte KMM5361000C2/C2G Fast Page Mode 1Mx36 DRAM SIMM Using Parity PLCC, 5V G EN E R A L D ESCRIPTIO N FEATURES The Samsung KMM5361000C2 is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361000C2 consists of eight CMOS


    OCR Scan     		PDF KMM5361000C2/C2G 1Mx36 KMM5361000C2 20-pin 18-pin 72-pin KM44C1000CJ KMM5361000C

    KMM591000BN-6

    Abstract: kmm591000bn7 KMM591000BN6 KMM591000BN8 1Mx9 DRAM 30-pin SIMM KM44C1000BJ KMM591000BN KMM591000B
    Text: KMM591000BN DRAM MODULES 1MX9 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tu e tcAc I rc KMM591000BN-6 60ns 15ns 110ns KMM591000BN-7 70ns 20 ns 130ns KMM591000BN-8 80ns 20 ns 150ns The KMM591000BN is a Single In-line Memory Module


    OCR Scan     		PDF KMM591000BN KMM591000BN-6 KMM591000BN-7 KMM591000BN-8 110ns 130ns 150ns KMM591000BN KM44C1000BJ kmm591000bn7 KMM591000BN6 KMM591000BN8 1Mx9 DRAM 30-pin SIMM KMM591000B

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S INC b?E D • KMM581000C 001 S 02 M Tfll S N G IC DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000C is a 1M b it x 8 Dynamic RAM high density memory module The Samsung


    OCR Scan     		PDF KMM581000C KMM581000C KM41C1000C 20-pin 30-pin 110ns KMM581000C-7 130ns KMM581000C-8

    M541000

    Abstract: 18PIN KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 KM41C1001C-6 KM41C1001C-8 KM41C1002C-6 KM41C1002C-7 M5M41000
    Text: - IM CMOS X m % ît £ °C Á D y n a m i c y * TRAC max (ns) TRCY min (ns) TCAD (ns) TAH mm (ns) y RAM (I 0 4 8 5 7 6 x 1 ) % ft +Ï TDH min (ns) THWC V D D or V C C (ns) TOY mm (ns) (ns) (V) TP 1 8 P I N X m I DD max (mA) I DD STANDBY ( I SB/ I SB2) (mA)


    OCR Scan     		PDF 18PIN KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 H5H41102AP/AJ/AL-10 M5M41102AP/AJ/AL-12 M5M41102AP/AJ/AL-8 M5M4C1000P/J/I. M5M4C1000P/J/L M541000 KM41C1001C-6 KM41C1001C-8 KM41C1002C-6 KM41C1002C-7 M5M41000

    km44c1000cj

    Abstract: No abstract text available
    Text: / DRAM MODULE 8 Mega Byte KMM5362000C2/C2G Fast Page Mode 2Mx36 DRAM SIMM Using Parity PLCC, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5362000C2 is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362000C2 consists ot sixteen CMOS


    OCR Scan     		PDF KMM5362000C2/C2G 2Mx36 KMM5362000C2 20-pin 18-pin 72-pin km44c1000cj