30- 40GHZ FET Search Results

Sumitomo 1295SA

Abstract: 1295SA 283E03 S2125 S1125 P125D
Contextual Info: AMMC-6442 37 - 40 GHz 1W Power Amplifier Data Sheet Description Features The AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37GHz and 40GHz. In the operational band, it provides typical 30 dBm of output power P-1dB and 23dB of

Sumitomo 1295SA

Abstract: 1295SA sumitomo silver epoxy HBM W10 TRAY THERMO A004R GaAs MMIC ESD, Die Attach and Bonding Guidelines
Contextual Info: AMMC-6442 37 - 40 GHz 1W Power Amplifier Data Sheet Description Features The AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37GHz and 40GHz. In the operational band, it provides typical 30 dBm of output power P-1dB and 23dB of

super bonder 325

Abstract: ls40f
Contextual Info: EC1840 4 0 G H z LOW N O I SE FET G a A s F I E L D E F F E C T T R A N S I S T O R NOT FOR NEW DESIGNS. USE EC2827 REPLACEMENT. FEATURES • Low noise figure : N F min = 1.5dB typ. at 18GHz N F min. = 3dB (typ.) at 40GHz • High associated gain : G a = 11.5dB (typ.) at 18GHz

203263

Contextual Info: AMMC-6550 15 to 50 GHz Image Rejection Mixer Data Sheet Description Features AMMC-6550 is an image rejection mixer IRM , which can also be used as an IQ mixer. The AMMC-6550 utilizes two distributed passive FET mixers and a Lange coupler realized in Avago Technologies unique

CHR2297

Abstract: if6g
Contextual Info: CHR2297 RoHS COMPLIANT 36-44GHz Multifunction Down-Converter GaAs Monolithic Microwave IC Description The CHR2297 is a multifunction chip MFC which integrates a LO buffer amplifier, an IF amplifier and a single cold FET mixer. It is usable for down-conversion. It is designed

IF2G

Abstract: GaAs FET HEMT Chips CHR2297
Contextual Info: CHR2297 RoHS COMPLIANT 36-44GHz Multifunction MFC Down-Converter GaAs Monolithic Microwave IC Description The CHR2297 is a multifunction chip (MFC) which integrates a LO buffer amplifier, an IF amplifier and a single cold FET mixer. It is usable for down-conversion. It is designed for a

Contextual Info: SDA-7000 SDA-7000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.40mmx1.21mmx0.102mm Product Description Features RFMD’s SDA-7000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They are ideal for wideband amplifier gain blocks, modulators,

Contextual Info: CHR2297 RoHS COMPLIANT 36-44GHz Multifunction Down-Converter GaAs Monolithic Microwave IC Description The CHR2297 is a multifunction chip MFC which integrates a LO buffer amplifier, an IF amplifier and a single cold FET mixer. It is usable for down-conversion. It is designed

CC45T47K240G5C2

Abstract: Sumitomo 1295SA SA1515BX101M2HX5 SK04B102M11A6 GRP155F51A474ZDO2B PCB Rogers RO4003 substrate AVX0402YG104ZAT2A HIGH GAIN FET 1295SA Presidio Components CAP
Contextual Info: AMMC-5024 30KHz–40 GHz TWA Operational Guide Application Note 5359 Introduction Device Description This application note is an operational guide for Avago’s AMMC-5024 Traveling Wave Amplifier. The AMMC-5024 is a broadband PHEMT GaAs MMIC designed for medium output power 22.5dBm P1dB

AMMP-6441

Abstract: A004R
Contextual Info: AMMP-6441 36 - 40 GHz, 0.4W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6441 MMIC is a 0.4W power amplifier in a surface mount package designed for use in transmitters that operate at frequencies between 36GHz and 40GHz. In the operational band, it provides 26 dBm of output power

if6g

Abstract: CHR2297 pHEMT 6GHz
Contextual Info: CHR2297 RoHS COMPLIANT 36-44GHz Multifunction Down-Converter GaAs Monolithic Microwave IC Description The CHR2297 is a multifunction chip MFC which integrates a LO buffer amplifier, an IF amplifier and a single cold FET mixer. It is usable for down-conversion. It is designed

SDA-7000SB

Abstract: JESD22-A114 broadband bias tee SDA-7000 30- 40Ghz FET
Contextual Info: SDA-7000 SDA-7000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.40mmx1.21mmx0.102mm Product Description Features RFMD’s SDA-7000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They are ideal for wideband amplifier gain blocks, modulators,

Contextual Info: Data Sheet GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126 FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 dB compression P1dB : 17.5 dB typical Saturated output power (PSAT): 21 dBm typical Gain: 11 dB typical Output third-order intercept (IP3): 28 dBm typical

Contextual Info: GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1127 3 RFIN RFOUT 1 5 VGG1 4 VGG2 13085-001 Output power for 1 dB compression P1dB : 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to

Contextual Info: AMMC-6550 15 to 50 GHz Image Rejection Mixer Data Sheet Chip Size: 1600 x 1300 mm 100 x 47 mils Chip Size Tolerance: ± 10mm (±0.4 mils) Chip Thickness: 100 ± 10mm (4 0.4 mils) Pad Dimensions: 100 x 100 mm (4 x 4 ± 0.4 mils) Description Features AMMC-6550 is an image rejection mixer (IRM), which

RF42

Abstract: 15-50G
Contextual Info: AMMC-6550 15 to 50 GHz Image Rejection Mixer Data Sheet Chip Size: 1600 x 1300 m 63 x 51 mils Chip Size Tolerance: ± 10 m (± 0.4 mils) Chip Thickness: 100 ± 10 m (4 ± 0.4 mils) Pad Dimensions: 100 x 100 m (4 x 4 ± 0.4 mils) Description Features

AMMC-6550

Abstract: mixers circuit using 90 degree hybrid satellite 40Ghz fet
Contextual Info: AMMC-6550 15 to 50 GHz Image Rejection Mixer Data Sheet Chip Size: 1600 x 1300 mm 63 x 51 mils Chip Size Tolerance: ± 10 mm (± 0.4 mils) Chip Thickness: 100 ± 10 mm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 mm (4 x 4 ± 0.4 mils) Description Features

Contextual Info: CHR3394-QEG RoHS COMPLIANT 37-40GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD leadless package Description The CHR3394-QEG is a multifunction monolithic receiver, which integrates a balanced cold FET mixer, a LO chain with buffers associated to a time two multiplier,

AN0017

Abstract: MO-220 38 C 41
Contextual Info: CHR3394-QEG RoHS COMPLIANT 37-40GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD leadless package Description The CHR3394-QEG is a multifunction monolithic receiver, which integrates a balanced cold FET mixer, a LO chain with buffers associated to a time two multiplier,

AMMP-6442

Abstract: 537e P125D S1125
Contextual Info: AMMP-6442 37- 40 GHz, 1W Linear Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6442 MMIC is a 1W linear power amplifier in a surface mount package designed for use in transmitters that operate at frequencies between 37GHz and 40GHz. In the operational band, it provides 30dBm of

Contextual Info: TGA4508 Ka Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3 V, Id = 40 mA Ga in & R e tu rn L o ss d B 40 30 Gain 20 Typical Frequency Range: 30 - 42 GHz 21 dB Nominal Gain

TGA4508

Contextual Info: TGA4508 Ka Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3 V, Id = 40 mA Ga in & R e tu rn L o ss d B 40 30 Gain 20 Typical Frequency Range: 30 - 42 GHz 21 dB Nominal Gain

datasheet shf 807

Contextual Info: SHF Communication Technologies AG Wilhelm-von-Siemens-Str. 23D • 12277 Berlin • Germany Phone +49 30 / 772 05 10 • Fax +49 30 / 753 10 78 E-Mail: sales@shf.de • Web: http://www.shf.de Datasheet SHF 807 Linear Broadband Amplifier SHF reserves the right to change specifications and design without notice – SHF 807 - V005 – August, 2013

Contextual Info: PPH15X_10 TECHNOLOGY The new UMS 150nm GaAs power pHEMT process UMS is now pleased to extend its foundry offer with the introduction of a new 150nm GaAs Power pHEMT process. This process is optimised for wideband high power amplification up to 40GHz with a typical Ft of 65GHz