300 VOLT 5 AMPERE TRANSISTOR Search Results

MBT3904 datasheet

Abstract: MBT3904 1 microfarad capacitor SOT23 MBT3904 MBT35200 MBT35200MT1 MRA4003T3 NCP100 TL431 TLV431
Contextual Info: AND8028/D Precision Sub-One Volt 1.7 Ampere Output LDO Jason Hansen ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Figure 1 for the circuit schematic. Since a PNP transistor is implemented, the signal from the precision reference needs to be inverted. A small signal NPN, Q2, is used for this

mj150* darlington

Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35

fusetron class k9

Contextual Info: Pg206 to 230 /12-25-01 1/3/02 3:42 PM Page 206 Fuse Technology Circuit Protection Electrical distribution systems are often quite complicated. They cannot be absolutely fail-safe. Circuits are subject to destructive overcurrents. Harsh environments, general deterioration, accidental damage, damage from natural causes, excessive expansion, and/or overloading of the electrical distribution system are

KR324515

Abstract: pm300hha120 300 volt 5 ampere transistor 200 Ampere transistor 200 Ampere power transistor CM100DY-24H PM300hH
Contextual Info: Power Tranalstor Module Numbering System Powtnx, Ine., 300 m m Str— t, Youngwood, ftw w yfHMHa Um 7-1t00 413 MO-7273 P ow n x, Europe, S.A. 438Aw nu• Q. Duranti, BP107, 73009 L* Mam, tou x» (43) 41.14.14 Digit 1: Digit 3: J - FETM OD M OSFET Modules

international rectifier GTO

Abstract: SCR 700v 30a LA50-P L15S1000 SCR 1000V 1000A LA055URD33TTI2250 LA100P DC Fuse 1000V 800A LA70QS80-22F LA60Q15-2
Contextual Info: Special Purpose Fuses Semiconductor Fuses 150 – 1300 VAC • Very Fast Acting • 1 – 6000 Amperes Semiconductor Fuses Littelfuse Semiconductor fuses are very fast acting fuses designed specifically for the protection of diodes, thyristors, triacs, and other

Contextual Info: l c/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MJ10042 MJ10045 MJ10048 25, GO, and 100 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 25 KVA ENERGY MANAGEMENT SERIES SWITCHMODE DARLINGTON TRANSISTORS

mcl d01 94V0

Abstract: mcl d01 94vo lcd nec 2501 LD 229 TY 8016 thyristor LNNB001 mcl d01 display mcl d01 94VO 4300 MCL D01 94VO LCD DISPLAY FREE Bucket Elevator Design NH3 GL-GG
Contextual Info: POWR-GARD PRODUCTS CATALOG Littelfuse The World’s Leading Provider of Circuit Protection Solutions An Exceptional Portfolio Littelfuse is committed to providing every one of our customers with the right solutions to meet all of your circuit protection needs. Makes All the Difference

7BR25SA120

Abstract: design drive circuit of IGBT IR2112 application note IGBT cross reference IRGP30B120KD-E AN-983a IR igbt gate driver ic IR2112 equivalent IR2112 an-990
Contextual Info: “Positive Only” Gate Drive IGBTs Created by Cres Minimization By Richard Francis, Peter Wood and Arnold Alderman, International Rectifier Corporation As presented at PCIM 2001 +Vbus Previously, the general practice is to provide Insulated Gate Bipolar Transistors IGBTs with

K042

Abstract: D-07 KD421A20
Contextual Info: m üEREX POÜJEREX INC TflD ] • 72T4LS1 QOOESOl Powerex, Inc., Hitlis Street, Youngwood, Pennsylvania 1S697 412) 925-7272 Ö KD421A20 Tentative Fast Switching Dual Darlington Transistor Module 200 Amperes/125 Volts Description - ; Powerex'Fast Switching Dual Darlington

Darlington 30A

Abstract: KD221K0310 kd2245
Contextual Info: 7294621 POWEREX INC 3 0 Amperes 4 5 0 /1 0 0 0 Volts ^2 D E Í 7 S T M b 2 1 D G D m i ñ 0 |~~ q \ T-33-35 Dual Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3.150+.020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 Millimeters 94 Max

RBSOA

Abstract: transistor crossover
Contextual Info: SWITCHING TRANSISTOR FUNDAMENTALS The advances in the technology of bipolar switching power transistors have resulted in devices which com­ bine high-voltage capability, speed, and ruggedness previously thought impossible to obtain in a single transistor. As an example, General Semiconductor

westinghouse DIODES

Abstract: WESTINGHOUSE dc motor 300 volt 5 ampere transistor Westinghouse diode westinghouse ac motor kd7245 KD724502 WESTINGHOUSE transistor westinghouse semiconductor
Contextual Info: 7294621 POWEREX INC PE | 7BT4b5:L □ 0 □ 0 •=]15 4 Dual Darlington TRANSISTOR Modules Dim A B C D E F Q H J Inches. 2.76 1.06 2.36 ±0.01 2.17 1.02 .59 .43 .181 .315 |~~5 _ qf T-33-35 20 Amperes 450 Volts Millimeters 70 27 60±0.3 5.5 26 15 11 4.6 8

Westinghouse diode

Abstract: KS8245A1 WESTINGHOUSE dc motor Westinghouse power diode S-8245 WESTINGHOUSE ELECTRIC westinghouse ac motor ks82
Contextual Info: r 7294621 PQWEREX INC dT | 75^51 DOOgflflT 7 B ~ — & Single Darlington TRANSISTOR Module Dim A B C D E F G H J K Inches 1.54 Max 1.27 * 0.008 .77 .65 .94 .276 .146 .165 .945 .126 T-33-35 15 Amperes 450 Volts Millimeters 39 Max 32.2 * 0.2 19.5 16.6 24 Max

Contextual Info: POUETREX 7294621 m N INC ejß]> ]> POWEREX E H m INC 7 2 ^ 2 1 0002431 3 98 D 02431 E X KEE525B0 Powerex, Inc., Hlllls Street, Yaungwood, Pennsylvania 15697 412 925-7272 In te g r a l B a k e r C la iìip Six-Darlington Transistor Module 8 Amperes/300 Volts

transistor k 4213 m

Abstract: transistor k 4213 1S697 KT521203 KTS21203
Contextual Info: 7294621 POWEREX IN C Tfl De | 7B cm b 2 1 mMEREX 3 j~ ‘ D ' T *i 3 3 -J t5 ; KT521203 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ) Split-Dual Darlington Transistor Module 30 Amperes/1200 Volts Description Powerex.Split-Dual Darlington Transistor

2N6543

Abstract: 2N6542 S200
Contextual Info: ÆlMOSPEC SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS NPN These devices are designed for high-voltage,high-speed,power 2N6542 2N6543 switching inductive circuits where fall time is critical.they are particu­ larly,suited for 115 and 220 volt line operated SWITCHMODE appli­

Westinghouse diode

Abstract: kd32 1B2 diode
Contextual Info: 7294621 POWEREX INC 150 Amperes 4 5 0 /1 0 0 0 Volts b2 DE I 7E14tHl 0 0 0 D C134 Û f _ 0 T-33-35 Dual Darlington TRANSISTOR Modules Dim A B C D E F G H J K L M N P Inches 3.740 Max 3.150+ .010 .90 Dim A B C D E F G H J K L M N P Q R S T U Inches 4.250 Max

power transistor motor control

Abstract: 1S697 D66GV D66GV5 D66GV6 D66GV7 l 7251 ICM75
Contextual Info: 7294621 POWEREX ¡NO O p W E R E HP, tE ^ a ^ a i Fo“' OOQ2177 u X o Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 1S697 412 925-7272 e -iT 7 ~ - 3i L : Fast Switching Single Darlington Transistor Module 50 Amperes 500-600-700 Volts Description

transistor k 4213 m

Abstract: transistor BJ 102 transistor k 4213 TRANSISTOR BJ 101 b206a KT-52
Contextual Info: 72 94621 POWEREX INC Tfl » F | 7 B cm b 2 1 m/vatex 3 | " D 'Ti S3-J5' KT521203 Powerex, Inc., Hlllts S treet, Yourtgwood, Pennsylvania 15697 412 925-7272 Split-Dual Darlington Transistor Module 30 Am peres/1200 Volts Description Powerex.Spiit-Dual Darlington Transistor

transistor z5t

Abstract: 1S697 KT521K03 300 volt 5 ampere transistor a 31 transistor k 4213 TI-125K 1251C
Contextual Info: 7 2 9 4 6 2 m N 1' P O W ER E X I NC T f l D e | 7 2 ^ 5 1 C O D E 3 7 7 E X _ E R Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 ) 1 | “ T ^ 3 3 ~ 3 5 “ d KT521K03 S p U t - D U d l D a r lin g t O F I Transistor Module

K723

Abstract: KT234520 transistor 236 bipolar power transistor vce 600 volt
Contextual Info: 7294621 POWEREX INC I O H E R E _ D E I 7 2 i MbSI 0D0SD3b fl D KT234520 K Powemi, Inc., Hlllla Street, ibungwood, Pennsylvania 15697 412 925-7272 Split-Dual Bipolar Transistor Module 200 Amperes/600 Volts Description Powerex Split-Dual Bipolar Transistor

CNY33

Abstract: CNY35 D29E2 D45H8 I20VAC 86Vac
Contextual Info: SOLID STATE 01 Optoelectronic Specifications » e I bü TSDÖI 001'ifl3ñ S T -*V < -5 3 Photon Coupled Isolator CNY33 Ga As Infrared Emitting Diode & NPN Silicon High Voltage Photo-Transistor The GE Solid State CNY33 is a gallium arsenide, infrared emitting

2N6543

Abstract: 2N6542 S200 LB 122 NPN TRANSISTOR
Contextual Info: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS These devices are designed for high-voltage,high-speed,power NPN 2N6542 2N6543 switching inductive circuits where fall time is critical.they are particu­ larly,suited for 115 and 220 volt line operated SWITCHMODE appli­

Contextual Info: 7294621 m POWEREX u a m INC “ DEI 7514^51 DD0SD3b x Powerex, Inc., Hlllls Street, ibungwood, Pennsylvania 15697 412 925-7272 fl D "T ^ S ^ Z y KT234520 Split-Dual Bipolar Transistor Module 200 Amperes/600 Volts Description o u t liv e m m ìn g Powerex Split-Dual Bipolar Transistor