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onsemi MJ2955G TRANS PNP 60V 15A TO204
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DigiKey	MJ2955G	Tray	155		1	1 $4.87 10 $3.401 100 $2.5264 1000 $2.20676 10000 $2.20676	Buy Now
Avnet Americas	MJ2955G	Bulk		9 Weeks, 1 Days	1	1 $4.92 10 $3.9 100 $3.33 1000 $3.33 10000 $3.33	Buy Now
	MJ2955G	Tray		10 Weeks	300	1 - 10 - 100 - 1000 $2.31267 10000 $2.24206	Buy Now
Mouser Electronics	MJ2955G		348			1 $4.87 10 $3 100 $2.52 1000 $2.2 10000 $2.2	Buy Now
Arrow Electronics	MJ2955G		100	10 Weeks	100	1 - 10 - 100 $2.5451 1000 $2.2327 10000 $2.2266	Buy Now
Newark	MJ2955G	Bulk	99		1	1 $4.92 10 $3.9 100 $3.33 1000 $2.6 10000 $2.6	Buy Now

Onlinecomponents.com	MJ2955G		155			1 - 10 $2.63 100 $2.49 1000 $2.18 10000 $2.08	Buy Now
Avnet Silica	MJ2955G			11 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	MJ2955G		200	12 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	MJ2955G		7,600			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	MJ2955G		155			1 - 10 $2.63 100 $2.49 1000 $2.18 10000 $2.08	Buy Now
New Advantage Corporation	MJ2955G		200		1	1 - 10 - 100 $4.15 1000 $3.84 10000 $3.84	Buy Now
STMicroelectronics MJ2955 TRANS PNP 60V 15A TO3
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DigiKey	MJ2955	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	MJ2955		12			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EVVO Semiconductor MJ2955 TRANS PNP 60V 15A TO3
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DigiKey	MJ2955	Tray			1	1 $5.37 10 $3.762 100 $2.8088 1000 $2.5 10000 $2.5	Buy Now
Central Semiconductor Corp MJ2955-PBFREE TRANS PNP 70V 15A TO3
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DigiKey	MJ2955-PBFREE	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Aptina Imaging MJ2955G Trans GP BJT PNP 60V 15A 115000mW 3-Pin(2+Tab) TO-3 Tray
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Verical	MJ2955G		150		20	1 - 10 - 100 $3.237 1000 $2.834 10000 $2.834	Buy Now
	MJ2955G		100		100	1 - 10 - 100 $2.5518 1000 $2.2386 10000 $2.2325	Buy Now

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MJ2955 Datasheets (43)

Part	Manufacturer	Description	Datasheet Type	PDF
MJ2955	Motorola	15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115	Original	PDF
MJ2955	On Semiconductor	Complementary Silicon Power Transistors	Original	PDF
MJ2955	Semelab	Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115	Original	PDF
MJ2955	STMicroelectronics	Complementary power transistors	Original	PDF
MJ2955	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115	Original	PDF
MJ2955	USHA	PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115	Original	PDF
MJ2955	USHA	Silicon power transistor. General purpose switching and amplifier applications. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vdc, Ic = 15Adc, Ib = 7Adc. - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115	Original	PDF
MJ2955	Various Russian Datasheets	Transistor	Original	PDF
MJ2955	Wing Shing Computer Components	PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115	Original	PDF
MJ2955	Boca Semiconductor	COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115	Scan	PDF
MJ2955	Central Semiconductor	Leaded Power Transistor General Purpose, TO-3	Scan	PDF
MJ2955	Continental Device India	TO-3 Power Package Transistors	Scan	PDF
MJ2955	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
MJ2955	Crimson Semiconductor	EPITAXIAL BASE Transistor	Scan	PDF

MJ2955	Diode Transistor	Transistor Short Form Data	Scan	PDF
MJ2955	Diode Transistor	Silicon Transistors / TO-63 Transistors	Scan	PDF
MJ2955	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
MJ2955	General Electric	Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115	Scan	PDF
MJ2955	Mospec	Complementary Silicon Power Transistor	Scan	PDF
MJ2955	Mospec	POWER TRANSISTORS(15A,50V,115W) - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115	Scan	PDF

MJ2955 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N3055A Abstract: Vce(sat) MJ2955A Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055A DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage: VCE sat = 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A	Original	PDF	2N3055A MJ2955A 2N3055A Vce(sat) MJ2955A
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION	Original	PDF	2N3055 MJ2955 C-120 MJ2955Rev291201E
2n3055 malaysia Abstract: Mj2955 Text: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors Applications • General purpose 1 • Audio amplifier 2 Description TO-3 Figure 1.	Original	PDF	2N3055, MJ2955 2N3055 DocID4079 2n3055 malaysia Mj2955
pmd10K80 Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88 Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789	Original	PDF	2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
2N3055 Abstract: MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 MJ2955 mexico 2N3055 JAPAN Text: 2N3055 MJ2955  COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series	Original	PDF	2N3055 MJ2955 2N3055 MJ2955. MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 MJ2955 mexico 2N3055 JAPAN
2N3055 Abstract: hfe 2n3055 2N3055 ST 2N3055 schematic diagram MJ2955 ST 2N3055 2N3055 MJ2955 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier Text: 2N3055 MJ2955 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 1 2 Description The devices are manufactured in epitaxial-base	Original	PDF	2N3055 MJ2955 2N3055 JESD97. hfe 2n3055 2N3055 ST 2N3055 schematic diagram MJ2955 ST 2N3055 2N3055 MJ2955 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier
texas 2n3055 Abstract: BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955* Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc	Original	PDF	2N3055 MJ2955* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C texas 2n3055 BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100
Untitled Abstract: No abstract text available Text: 2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for	Original	PDF	2N3055 MJ2955 200mA 200mA, 400mA 26-July
2N3055 Abstract: 2n3055 malaysia MJ2955 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955 Text: 2N3055 MJ2955 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 1 2 Description The devices are manufactured in epitaxial-base	Original	PDF	2N3055 MJ2955 2N3055 2n3055 malaysia MJ2955 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
MJ2955 Abstract: 2N3442 2N3055 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773 Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789	Original	PDF	2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 MJ2955 2N3442 2N3055 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773
2N5875 Abstract: BDX85C LM3661TL-1.40 BU208 2N5886 BDW52B Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789	Original	PDF	BUY69C MJ802 MJ1000 MJ1001 MJ3000 MJ3001 MJ4033 MJ4034 MJ4035 2N5875 BDX85C LM3661TL-1.40 BU208 2N5886 BDW52B
pin configuration transistor 2n3055 Abstract: pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 2n3055 IC 2n3055 pin hfe 2n3055 Mj2955 power transistor pnp transistor 2N3055 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION	Original	PDF	2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 IC 2n3055 pin hfe 2n3055 Mj2955 power transistor pnp transistor 2N3055
MJ2955 300 watts amplifier circuit diagram Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • http://onsemi.com	Original	PDF	2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
Untitled Abstract: No abstract text available Text: MJ2955 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	MJ2955 O204AA) 18-Jun-02

Untitled Abstract: No abstract text available Text: SEMELAB LTD 37E D Û1331Ô7 DGGGDbO 1 • SMLB m ‘ Î'rîwî. Type No. Reliability Polarity Option MJ900 MJ901 MJ2500 MJ2501 MJ2955 SCREEN SCREEN SCREEN SCREEN CECC PNP PNP PNP PNP PNP MJ3000 MJ3001 MJ3201 HJ3202 MJ3238 SCREEN SCREEN HX-REL HI-REL HI-REL	OCR Scan	PDF	MJ900 MJ901 MJ2500 MJ2501 MJ2955 MJ3000 MJ3001 MJ3201 HJ3202 MJ3238
2N3442 Abstract: 2N5875 NPN Transistor 2N3055 darlington 2N3055 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 Text: Pow er Transistors TO-3 Case TYPE NO. •c Pd BVc b O b v C e o @ Ic hFE VCE SAT @ <c TYP (A) NPN 2N3055 PNP MJ2955 2N3442 (W) MAX 15 115 (A) (V) (V) MIN MIN MIN 100 60 5.0 — 00 (A) 10 (MHZ) MIN MAX MAX fT TYP 3.0 10 2.5 . 10 117 160 140 20 70 3.0 5.0	OCR Scan	PDF	2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 2N3442 2N5875 NPN Transistor 2N3055 darlington
MJ2955 Abstract: bdx18 Text: File Number HARRI S BDX18, MJ2955 994 SEMICOND SECTOR 5bE » Silicon P-N-P EpitaxialHigh-Power Transistors 430 2 27 1 0040bflfl T4T H H A S 7 =3 3 -? - 3 TERMINAL DESIGNATIONS Rugged, Broadly Applicable Devices For Industrial and Commercial Use Features: • High dissipation capability	OCR Scan	PDF	BDX18, MJ2955 0040bflfl RCA-BDX18 MJ2955 BDX18) 92CM-3D559RI BDX18 MJ2955. 2CS-29005
2n3055 Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR Text: COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications PNP MJ2955 Boca Semiconductor Corp. BSC FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A	OCR Scan	PDF	2N3055 MJ2955 MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR
MJ2955 Abstract: MJ2955 300 watts amplifier BDX18 bdx18 me distan U007 L100 J BDX18 33z3 Text: G E SOLID STATE 3875081 G E SOL ID S TATE Pro Electron Power Transistors _ 01 ]>F\| 3fl7S0fll 0017557 T 01Ë" 17557 D r - i J ' - 2-? BDX18, MJ2955 Silicon P-N-P Epitaxial-Base High-Power Transistors File Number 994 TERMINAL DESIGNATIONS Rugged, Broadly A pplicable Devices	OCR Scan	PDF	BDX18, MJ2955 O-220AB RCA-BDX18 MJ2955 BDX18 MJ295S. 92CS-2 001LECTOR-TO-EMITTER 290Q7 MJ2955 300 watts amplifier bdx18 me distan U007 L100 J BDX18 33z3
pin configuration transistor 2n3055 Abstract: 2N3055 MJ2955 power transistor 2n3055 Transistor 2n3055 pin configuration transistor mj2955 pin configuration 2N3055 transistor 2N3055 Text: IL 2N3055 MJ2955 2N3055 MJ2955 NPN POWER TRANSISTOR PNP POWER TRANSISTOR General Purpose Switching and Amplifier Applications DIM MIN A B C D - E F G H J K L M - 6.35 0,96 29,90 10,69 5.20 16,64 11,15 - 3.84 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter	OCR Scan	PDF	2N3055 MJ2955 MJ2955 pin configuration transistor 2n3055 2N3055 MJ2955 power transistor 2n3055 Transistor 2n3055 pin configuration transistor mj2955 pin configuration 2N3055 transistor
MJ2955 TRANSISTOR Abstract: pnp transistor 2N3055 2n3055 collector characteristic curve 2N3055 Transistor MJ2955 data transistor 2n3055 MJ2955 2n3055 200 watts amplifier Mj2955 power transistor 2N3055 transistor 2N3055 curve Text: SOLID STATE INC. 46 FARRAND STR EE T BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com COMPLEMENTARY SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching applications NPN PNP 2N3055 MJ2955 FEA TU RES: * Power Dissipation - PD = 115W @ Tc = 25°C	OCR Scan	PDF	2N3055 MJ2955 2N3055 MJ2955 MJ2955 TRANSISTOR pnp transistor 2N3055 2n3055 collector characteristic curve Transistor MJ2955 data transistor 2n3055 MJ2955 2n3055 200 watts amplifier Mj2955 power transistor 2N3055 transistor 2N3055 curve
MJ2955HV Abstract: No abstract text available Text: CDU MJ2955HV MJ2955HV PNP POWER TRANSISTOR Hi-fidelity Amplifier and Power Switching Circuits, Series and Shunt Regulator Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15 11,15 12,25	OCR Scan	PDF	MJ2955HV MJ2955HV 400mA 300ps;
MJ2955 Abstract: BDX18 CDP055 Text: TO-3 Power Package Transistore PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) VCBO v CE0 (V) (V) Vebo Pd (W) (A) (V) Min Tc=25°c Min Min BDX18 100 60 7 117 15 C D P05 5 50 50 5 50 10 MJ2955 100 60 7 117	OCR Scan	PDF	BDX18 CDP055 MJ2955
transistor 2N3055 Abstract: MJ2955 300 watts amplifier mj2955 MBD5300 2N3055* motorola MJ2955 app. note 2N3055 AN-415 MJ2500 MJ3000 Text: MJ2955 SILICON 15 AMPERE POWER TRANSISTOR PNP SILICON POWER TRANSISTOR PNP SILICON . . . designed for general-purpose switching and amplifier applications. • DC Current Gain — hpE = 20-70 @ lc = 4.0 Adc * Collector-Emitter Saturation Voltage — VcE(sat) “ 1*1 Vdc (Max) @ lc = 4.0 Adc	OCR Scan	PDF	MJ2955 2N3055 MJ3000, MJ3001 MJ2500 transistor 2N3055 MJ2955 300 watts amplifier mj2955 MBD5300 2N3055* motorola MJ2955 app. note 2N3055 AN-415 MJ3000

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MJ2955 Datasheets (43)

MJ2955 Datasheets Context Search

2N3055A

Untitled

2n3055 malaysia

pmd10K80

2N3055

2N3055

texas 2n3055

Untitled

2N3055

MJ2955

2N5875

pin configuration transistor 2n3055

MJ2955 300 watts amplifier circuit diagram

Untitled

Untitled

2N3442

MJ2955

2n3055

MJ2955

pin configuration transistor 2n3055

MJ2955 TRANSISTOR

MJ2955HV

MJ2955

transistor 2N3055