30006D Search Results

Contextual Info: □IX Y S MEA / MEE / MEK 300-06DA Preliminary Data V RRM = 1200V Fast Recovery Epitaxial Diode FRED Module 600V 600V 1 rÎ I 2 3 Jj i, 2 r| 1 M 1 W l| 1 L ' frm TVJ = 45CC TVJ = 150°C Jpdt TVJ = 45° C TVJ = 150°C 1 I N I l< v , S0L t = 10 ms t = 8.3 ms

1057 D21B

Abstract: 072d silabs 353 PCA B 790 0029 1588 RS232 062d b4420 07BC 0352 FCS 530 rfm 1207
Contextual Info: TRC101/102 FHSS By Bob Nelson 2/7/2007 Scope: This application will demonstrate the ease of implementing a FHSS radio when using the TRC101/2. This document will give you the schematic and firmware to implement the design. Keep in mind that the TRC101/2 will meet or exceed FCC

300-06DA

Abstract: 0143f
Contextual Info: MEA 300-06DA MEE 300-06DA MEK 300-06DA Fast Recovery Epitaxial Diode FRED Module RRM FAVM rr 600 V 304 A 250 ns Preliminary data V„ V,R RM 600 600 V Type MEA300-06DA 1 'ÎI 1 MEK300-06DA MEE300-06DA 2 2 3 1 1",1“! f f1rî 2 M 1 N I ¡11 W * N 1 ! ! Î

DSE112-06A

Abstract: dse112 30-1OA 805A 140-12DA DSEI 30-06A DSE112-06 2X30-06C FOR DSEI 2X61-04C dsei 2x60
Contextual Info: Fast Recovery Epitaxial Diodes FRED and FRED Modules lFAV = 8 - 305 A Typa VJM DSEI8-06A • DSEI 8-05A • DSEI 8-04A ► DSEI 12-12A DSEI 12-10A lm @ -dl/dt F ^ 'F Van ‘ r, 45'C max. typ. typ. 10 ms Tvjm = 150-C TVJ=250C TVJ = 100CC A A/^a A ns •C

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

300-06DA

Contextual Info: MEA 300-06 DA MEK 300-06 DA MEE 300-06 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 600 V IFAVM = 304 A trr = 250 ns Preliminary data VRSM V 600 VRRM Type V 600 2 MEA 300-06DA 1 2 MEK 300-06DA 3 1 2 1 MEE 300-06DA 3 1 2 3 3 Symbol Test Conditions

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

30n50 mosfet

Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
Contextual Info: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600

DSE112-12

Abstract: DSE112-12A dse112 2x30-12b DSE119-06AS 500-06DA 250-12DA 300-06DA
Contextual Info: Fast Recovery Epitaxial Diodes FRED Ifav = 8 - 5 8 2 A Type *FSM TVjm = 150°C VJM A ► New 10 ms 45°C A Package style F max. "^VJM = typ. typ. T vj=25°C TVJ A ns 150°C A 100-C A/jis K/W 64 2.5 50 100 2.0 62 100 1.6 78 35 100 1.6 62 40 100 1.6 78 200

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1

Contextual Info: MEA 300-06 DA MEK 300-06 DA MEE 300-06 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 600 V IFAVM = 304 A = 250 ns trr Preliminary data VRSM V 600 VRRM Type V 600 2 MEA 300-06DA 1 2 MEK 300-06DA 3 1 2 1 MEE 300-06DA 3 1 2 3 3 Symbol Test Conditions

300-06DA

Contextual Info: Fast Recovery Epitaxial Diode FRED Module MEO 300-06DA lFAVM = 305 A vRRM= 600 v trr Symbol Test Conditions ^FRMS ^FAVM TVJ = 125°C; Ts = 65°C TVJ = 125°C; Ts = 65°C; rectangular, d = 0.5 TVJ = 125°C; Ts = 65°C 431 305 1220 A A A ^FSM TVJ = 45°C;

250-12DA

Abstract: 300-06DA 95-06DA 450-12DA 350-02DA 7512DA 500-06DA
Contextual Info: FRED Modules lFAV= 75 - 582 A v RRM Type 1 ' fav @ * T1c d=0.5 ^FRMS Tvjm = 150°C vF ^FSM ^"vJM lF lnM @-di/dt l rr typ. typ. TVJ=25‘ C T„. = 100°C A A/ocs ns Package style P.« R .hJC ó Z max. Outline drawings 01 W Ll on page 91-100 V A MEO 550-02DA

IXYS MEO 450-12DA

Abstract: ixys 550-02da 250-12DA MEA 75-12 DA diode FRED module MEA75-12DA 300-06DA 550-02DA D3-11 MEA75-12
Contextual Info: FRED Modules Contents Package style 1 TO-240 AA Type Page 250 MEK/MEA/MEE 95-06 DA D3-2 75 250 MEK/MEA/MEE 75-12 DA D3-4 200 356 200 MEK 350-02 DA D3-5 200 582 150 MEO 550-02 DA D3-7 600 304 250 MEK/MEA/MEE 300-06 DA D3-9 2 600 514 250 MEO 500-06 DA D3-11