300FIS Search Results

82C8167

Abstract: UM82C8167 UM82C8
Contextual Info: UMC UM82C8167 S S 2 S S S 2 S 2 Î Real-Time Clock RTC eatures Microprocessor compatible (8-bit data bus) Milliseconds through month counters 56 bits of RAM with comparator to compare the real time counter to the RAM data 2 IN TERRU PT OUTPUTS with 8 possible interrupt

Contextual Info: RECTIFIERS SES5601C SES5602C SES5603C High Efficiency, 25A Center-Tap FEATURES • Low Forward Voltage • Fast Switching Speed • Convenient Package • High Surge Capability • Low Thermal Resistance • Mechanically Rugged TO-3 Package • Available as Positive or Negative Center-Tap

Contextual Info: TN2535 I Ljà Supertex. inc. I l L J U U 254° W Lr Low Thresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON ^GS(th) l[)(ON) b v dgs (max) (max) (min) 350V 12a 1.8V 400V 12Q 1.8 V Order Number / Package TO-243AA*

MOTOROLA POWER TRANSISTOR

Abstract: working of astable multivibrator circuit bipolar transistor tester mje13008 motorola AN1033 BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS Tektronix 7603 tester SCR DL111/D AN569
Contextual Info: by'ANI 083/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA AN1083 Basic Thermal Management of Power Semiconductors BY AL PSHAENICH MOTOROLA SEMICONDUCTOR PRODUCTS SECTOR Thermal management of power semiconductors is often overlooked by design engineers, either through oversight,

ds132

Contextual Info: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BST86 FEATURES: PARTMARKING DETAIL - KO ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 180 UNIT V Continuous Drain Current at Ta = 25°C •d 300 mA mA Pulse Drain Current taM

Contextual Info: FMMT2369 FMMT2369A S 0 T 2 3 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2369 - 1J FM MT2369A - P5 FMMT2369R - 9R FMMT2369AR - 9A ABSOLUTE MAXIMUM RATINGS VALUE U N IT V CBO 40 V V CES 40 V V C EO 15 V V mA PARAM ETER SYMBOL

VP0808B

Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P
Contextual Info: VPMH10 Part Numbers: VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B Leakage Currente Ohmic Region Vos— d r a in Tc—CASE TEMPERATURE °C SO U R C E VOLTAGE (VOLTS) ON Resistance Characteristics O Z I -60 -2 0 20 60 100 140 180

irf840

Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
Contextual Info: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j

4N29-4N33

Contextual Info: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E

Contextual Info: b.QE ]> • Û1331S7 GG0LH34 flbO M S r iL B SEUELAB PLC T ' H - Z S SEMELAB D1014UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DM O SRFFET 20W -28V-400M H z SINGLE ENDED M ECH A N ICA L DATA Dimensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: SENELAB LTD 37E » DEC 3 i 1987 Ö1331Ö7 OÜGDlGä O • SMLB SEMELAB BDS10 BDS11 B DS12 NEW PRODUCT ^ SILICON NPN EPITAXIAL BASE TO 220 METAL MECHANICAL DATA Dimensions in mm 10-60 FEATURES rjf • HERMETIC TO 220 METAL PACKAGE it • HIGH RELIABILTY • ISOLATED OPTION

Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E » • TTbHma N-CHANNEL POWER MOSFETS IRFP150/1511152/153 FEATURES • • • • • • • D Q 1 2 3 Ü 4 l b 1* ■ SMGK TO-3P Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

SPD502

Abstract: SPD503 SPD504 SPD505 SPD506
Contextual Info: y SPD502 PRELIMINARY 4 SOLID STATE DEVICES, INC thru SPD506 :- // 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 5 AMP 200-600 VOLTS 40 nsec HYPER FAST RECTIFIER Designer’s Data Sheet FEATURES: • ■ ■

100C

Abstract: SDR10A SDR10B SDR10D SDR10G SDR10J SDR10K SDR10M
Contextual Info: PRELIMINARY SDR10A thru SDR10M •¥: SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 10 AMPS 50-1000 VOLTS 5 iisec STANDARD RECOVERY RECTIFIER Designer’s Data Sheet FEATURES: ■ ■

Contextual Info: a SOLID STATE DEVICES INC 12E p Ja3t.b011 OQOlfiSb S | T-OS-13 SDR1A THRU SDR1N 1 AMP ULTRA FAST RECOVERY RECTIFIER 5 0 - 1 2 0 0 VOLTS CASE STYLE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES

Mosfet K 135 To3

Abstract: IRF430 432Z til 431 IRF330 IRF331 IRF332 IRF333 IRF431 IRF432
Contextual Info: 7 9 6 4 1 4 2 5 / M C M iM fî c c ü r r ' A M n n r ' T n -ñfl DE | ? ci t i 4 1 4E 0 0 D S 1 B 4 S c 98D ;N e 0 5134 D T ^ J f- N-CHANNEL POWER MOSFETS IRF430/431/432/433 FEATURES • • • • • • • • • Low RDS on at high voltage ' Improved inductive ruggedness

IN5616

Abstract: d5040 1N5614 1N5616 1N5618 1N5620 1N5622
Contextual Info: SOLI» STATE DEVICES INC 1SE D OGG1ÛDG *1 | T ~ 01 - 13 1N5614 THRU 1N5622 » s it a li 1 AMP STANDARD RECOVERY RECTIFIER 200-1000 VOLTS 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396 CASE STYLE FEATURES

NPN Transistor 10A 400V

Abstract: KSC2752 L 10mH TS 4142 KSC2751 400V 10A NPN transistor
Contextual Info: ¡SAMSUNG SEMICONDUCTOR INC KSC2751 " 1«4E 0 | 7^^4145 0 0 0 7 5 7 b 0 | NPN EPITAXIAL SILICON TRANSISTOR " : ; rT~33 -is HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating ' Sym bol Collector-Base Voltage

101B

Abstract: 2N5086
Contextual Info: Transistors 2N5086 USHA INDIA LTD AMPLIFIER TRANSISTOR TO-92 * Collector-Emitter Voltage: VCEo=50V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: fT 8253922 SILICON SÉNSORS INC JSILICON SENSORS INC SILICON SÉNSORS,JNC. EE5 Highway.;18;East. . : Dodgeyilie, Wisconsin 53533 ; E "TelepH c^ë; 608^35*2707^; TWX:910-28M 430 •' '• The Silicon Sensor 765-XX Optoelectronic Switch As­ sembly consists of a high quality Gallium Arsenide In­

IRFZ44

Abstract: IRFZ45 IRFZ44 mosfet IRFZ42 IRFZ44 MOSFETs IRFz44 n-channel MOSFET IRFZ40
Contextual Info: IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

FZT600

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 ISSUE 2 -FEBRUARY 1995- - m FEATURES * 2 A c o n tin u o u s c u rre n t * 140 VO LT VCE0 * G uara n te e d h FE S p e cifie d up to 1A

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - AUGUST 1995 _ FEATURES vCE0 * H igh * L o w s a tu ra tio n vo lta g e CO M PLEM ENTAR Y TYPE: -B S P 1 9 PAR TM ARKING DETAIL: - BSP16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - FEBRUARY 1996 O FEATURES * 25 Volt VCE0 * Low saturation voltage * Excellent hfE specified up to 6A pulsed . CO M PLEM EN TARY T Y P E - FZT655 PARTM ARKIN G D ETAIL - FZT755 ABSOLUTE MAXIMUM RATINGS.