302 PHOTOTRANSISTOR Search Results

RPI-302

Contextual Info: RPI-302 Sensors Photointerrupter, double-layer mold type RPI-302 The RPI-302 is standard tall package photointerrupter. This product can be fix on PCB by snap. zExternal dimensions Units : mm zApplication Reel count sensor for VCR Notes: 1. Unspecified tolerance shall be ±0.2.

ST-303

Abstract: ST-302
Contextual Info: Photo transistors KODENSHI ST-302・ST-303 DIMENSIONS Unit : mm The ST-302, 303 a high-sensitivity NPN silicon phototransistor mounted in a clear sidelooking package, is compact, low profile and easy to mount. FEATURES •Low profile package •Compact •Low-cost

foto transistor

Abstract: 302 phototransistor datasheet phototransistor 302 Q62702-P1623 Q62702-P1624 Q62702-P1625 Q62702-P1626 Q62702-P1627 Q62702-P1641 E F 302
Contextual Info: SFH 302 SFH 302 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm

Contextual Info: フォトトランジスタ PHOTOTRANSISTORS ST-302 ST-302は縦型透明樹脂でモールドされた高感度のシリコンフォト •外形寸法 DIMENSIONS（Unit : mm） The ST-302 is a high-sensitivity NPN silicon phototransistor 0.5 mounted in a clear low profile side-viewing package. This

phototransistor 302

Abstract: photo transistor high current PHOTO TRANSISTOR A 720 transistor TRansistor A 940 Rise time of photo transistor 720 transistor 302 phototransistor npn photo transistor
Contextual Info: OST-302 PHOTO TRANSISTOR • General Description The OST-302 is high sensitivity NPN silicon photo-transistor mounted in a black side-looking package , is compact , low profile and easy to mount. ■ Features ˙Compact ˙Low profile package ˙Low cost plastic package

Sunshine Science

Abstract: sunshine ST-302 82c08 22C02
Contextual Info: n ffigfifi ST-302 PHOTOTRANSISTORS SU NSH INE SC IE N C E su n sh in e DIMENSIONS U n it: mm S T -3 0 2 & v l i v b ? > * s Z 2 V to T he S T -302 is a h ig h -se n sitivity NPN silicon p ho to tra n sisto r m o u n te d in a c le a r low p ro file s id e -v ie w in g p a c k a g e . T h is

QAA27

Abstract: sfh siemens
Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Features Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm

foto transistor

Abstract: GETY6017 Q62702-P1641
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar

302 opto

Abstract: GET06017 Q62702-P1624 Q62702-P1625 Q62702-P1641 npn phototransistor
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar

Infrared Phototransistor 302

Abstract: LTR-5576D 302 phototransistor datasheet LTE-302-M LTE-309 LTR-5986DH phototransistor 302 302 phototransistor if lte LTE-302
Contextual Info: GaAs Plastic Side Look Infrared Emitting Diode LTE-302-M/LTE-309 Features Package Dimensions Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-5576D/ LTR-5986DH series of phototransistor.

OPL126A

Contextual Info: Issued July 1985 F4866 High voltage opto-isolator Stocknumber 302-148 The RS OPL126A opto-isolator consists of a GaAsP light emitting diode optically coupled to an NPN silicon phototransistor. The form of construction provides 10kV isolation between input and output, with a minimum

SIEMENS Phototransistors BPY

Abstract: 2108a siemens dioden SFH-506 SFH100 BPW21 300FA 2108 A SFH 314 SFH-10
Contextual Info: Silicon Photodetectors Si-Fotodetektoren Summary of Types Typenübersicht 1. Integrierter Empfänger Integrated Receiver 2. Fototransistoren Phototransistors ♦ SFH 506 BPX 81 3. SFH 300/FA SFH 313/FA SFH 314/FA BP 103 SFH 302 SFH 305 BPX 83 BP 104 F BPW 34 FA

BPX48

Abstract: SFH291 SFH100 fh205 BPW-21 SFH 314 fotodioden SFH317 bpx90 SFH2030
Contextual Info: Si-Fotodetektoren Silicon Photodetectors Typenübersicht Summary of Types 1. Integrierter Empfänger Integrated Receiver 2. Fototransistoren Phototransistors S ' y •- S BP 103 SFH 302 S F H 50 6 BPX81 BPX 83 SFH 305 V BP X 90/F BPX 38 BP 103 B/BF SFH 313/FA

OPL126A

Abstract: 812252U optoisolator IC OPTO-ISOLATOR Optoisolator 30214
Contextual Info: Issued March 1997 232-2560 Data Pack F High voltage opto-isolator Data Sheet RS stock number 302-148 The RS OPL126A opto-isolator consists of a GaAsP light emitting diode optically coupled to an NPN silicon phototransistor. The form of construction provides 10kV isolation between input and output, with a minimum current

Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor Chip p o s itio n SFH 302 R adiant sensitive area 0 0 .4 5 3.0 A p pro x. w e ight 0.5 g M a ß e in mm, w enn nicht anders angeg eben/D im ension s in mm, u n less otherw ise specified Wesentliche Merkmale

565-2 vde

Abstract: VDE0304
Contextual Info: PLASTIC HOLDER, SEPARABLE ARRANGEABLE IN ROWS KMA 301 KMA 307 KMA 302 KMA 308 KMA 303 KMA 309 KMA 304 KMA 310 KMA 305 KMA 311 KMA 306 KMA 312 EXAMPLE EXAMPLE SERIES KMA 301 TYPE PEAK FULL LUMINOUS INTENSITY VIEWING ANGLE TYP. IF FORWARD VOLTAGE IF = 20 mA

Side Look

Contextual Info: IR Emitter and Detector Product Data Sheet LTE-302 Spec No.: DS-50-92-0009 Effective Date: 04/12/2000 Revision: B LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.

FR 309 diode

Abstract: Infrared Phototransistor 302 2D05 LTR-5888
Contextual Info: • w p r A i II L I I C L f J k l l GaAs PLASTIC SIDE LOOK INFRARED EMITTING DIODE LTE-302-M/LTE-309 FEATURE •S e le c te d to specific o n -lin e intensity and rad iant intensity ranges. •Low cost plastic side looking package. •Mechanically and spectrally matched to the CTR-5576D/LTR5888DH series of phototransistor.

4n25

Abstract: 4n35 597-289 4n25 an DIODE 0536 W4N35 4n32
Contextual Info: Issued November 1992 F14481 4N series opto-isolators RS stock nos. 597-289, 597-295, 597-302 A range of industry standard general purpose opto-isolators. The 4N25 and 35 consist of a gallium arsenide infra-red emitting diode coupled to an NPN silicon photo-transistor. The 4N32 device consists of a gallium

Contextual Info: O K I electronic components T35L_ Silicon NPN Epitaxial Planar Phototransistor_ GENERAL DESCRIPTION The planar structure of the OKI T35L silicon phototransistor makes it a highly sensitive photodetector. High reliability is ensured by a hermetically sealed T O -18 package.

Contextual Info: O K I electronic components T55L_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.

PHOTO SENSORS

Abstract: diagram ta 306 ic 307 ex photo sensor 700 T55L photo resistance
Contextual Info: O K I electronic com ponents T55L_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.

bp 103-2

Abstract: Q62702-P79-S2 bp 103-5 Q62702-P1641
Contextual Info: Silicon Photodetectors Si-Fotodetektoren 2. Fototransistoren 2. Phototransistors 2.4 2.4 im hermetisch dichten Metallgehäuse Type Package deg. mm2 mA V nm US ±8 0.12 0.5 . 2.5 50 420 . 1130 BPY 62-3 0.8 . 1.6 7 Q60215-Y1112 BPY 62-4 1.25 . 2.5 9