3030BG Search Results

VTE3175L

Abstract: VTE3176L
Contextual Info: SbE D m 3030bG^ 0DD1EE1 GaAIAs Infrared Emitting Diodes VTE3175L, 3176L Coax Package w/ Cathode Lead — 880 nm 8. E G bb^ H V C T _ G VACTEC T ~ 4 \ “ J3 PACKAGE DIMENSIONS inch mm DESCRIPTION CASES COAX HERMETIC (WITH CASE LEAD) CHIP SIZE: .011 ’ *.011"

IC 7405

Abstract: FFD-100 FFD-040
Contextual Info: E G & G JUDSON 27E D • 3030bG5 ODOOlâT G ■ T"4/-'5/ F Series FFD-040;FFD-100;FFD-200 _ Features • • • • Low Operating Voltage High Responsivity Ultra-Fast Rise and FallTime Isolated Photodiode Chip • • • Large ActiveArea Wide Spectral Range

NEP 250

Abstract: photodiode "interference filter" photodiode interference filter SALEM 15-V 5006 OPTICAL
Contextual Info: G E & G JUDSON 27E D • 3030bGS QQQQ1ÔS 3 ■ DFA Series DFA-XXXX1 _ Features • • Built-in Low Noise Amplifier Large Active Area • Groundable Case • Built-in Interference Filter • Shielded Amplifier • Wide Spectral Range Operating Data and Specifications at 23°C

Contextual Info: DUAL E LE M E N T P H O T O C O N D U C T IV E C E L L VT300C T Series PACKAGE D IM EN SIO N S inch mm .355 (9.02) .016(0.41) .365 (9.27) .019(0.48) DIA. 1 .320 (8.13) =#= .330 (8.38) t .035 (0.89) - * .250 (6.35) .050 (1.27) .172 (4.37) 1.00(25.4) .202 (5.13)

J16-18A-R01M-SC

Abstract: J16-8SP-R05M J16-5SP-R02M-HS J16-5SP-R02M-SC photodiode ge J16-18A-R01M photodiode germanium J16-18A-R01M-HS J16-5SP-R03M-HS germanium diode equivalent
Contextual Info: Germanium Detector Operating Notes 0.8 to 1.8 ¡im General Responsivity Operating Circuit J1 6 S eries d etectors are hig h -q u ality G erm an iu m photodiodes designed for th e 800 to 1800 n m w avelen g th range. T he eq u iv alen t circu it for a G erm a­

UV-040BG

Abstract: UV-444BQ uv photodiode UV-444BQ UV-215BG CI 7405 UV-100BG UV-250BQ UV100BG UV-100BQ UV-250BG
Contextual Info: E G & G JUDSON 27E D • 3030tiQS Q 00G lb 3 4 ■ UV Series Features • • • • • Planar Diffused Structure Oxide Passivated Wide Spectral Range Flat Noise Spectrum to DC • • Linearity Over W ide Dynamic Range Peak Responsivity: 0.62 A /W at 900 Nanometers