3035P Search Results

3035-P

Abstract: 3035p 3045P D200 POWER DIODES r3045pt
Contextual Info: PD-2.324 International mURectifier m b r 3035p t m b r 3045p t SCHOTTKY RECTIFIER 30 Amp Description/Features Major Ratings and Characteristics MBR30.PT Units 30 A 35/45 V lFSM @ tp»5pssine 1020 A VF 0.60 V >F AV Rectanaular waveform VRRM The MBR30.PT center tap Schottky rectifier has been opti­

Contextual Info: DIGITRON SEMICONDUCTORS 3035PT-MBR3045PT 30A SCHOTTKY RECTIFIER MAXIMUM RATINGS Rating Symbol MBR 3035PT 3045PT 35 45 Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR Average rectified forward current Rated VR

Contextual Info: INTERNATIONAL RECTIFIER bSE D • 4AS54SS 001723b 315 PD-2.324 International W Rectifier m b r 3035p t m b r 3045p t SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Characteristics Description/Features MBR30.PT Units 30 A VRRM 35/45 V lFSM tp - 5 ps sine

DS23017

Abstract: 3045Pt 3050PT MBR3060PT 3040pt
Contextual Info: MBR3030PT - MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

30 MBR

Contextual Info: LITE-ON SEMICONDUCTOR MBR3030PTL thru 3060PTL REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-3P FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

30100PT

Contextual Info: MBR3030PT THRU MBR30100PT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 30 to 100 Volts Forward Current - 30.0 Ampere FEATURES TO-3P ● Plastic package has Underwriters Laboratory Flammability 15.8± 0.2 5.0± 0.15 4.9± 0.25 6.5± 0.3 Classification 94V-0

Contextual Info: 3035PT - MBR3060PT 3035PT - MBR3060PT Features • • • • • • Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier

Contextual Info: A dvanced R ow er Te c h n o lo g y 8 D2S7T0T Q00174Ô 301 • SBL3030PT thru SBL3060PT VOLTAGE 30 AMP RANGE 3 0 t o 6 0 V o lts SCHOTTKY BARRIER RECTIFIERS CURRENT 30 Am peres FEATURES TO-3P 645 16.4 Plastic package has U/L Flammability Classification 94V-0

3045PT

Abstract: 3060PT MBR3035PT MBR3060PT
Contextual Info: Certificate TH97/10561QM 3035PT ~ MBR3060PT DUAL SCHOTTKY BARRIER RECTIFIERS PRV : 35 ~ 60 Volts Io : 30 Amperes TO-247AD TO-3P 0.203(5.16) 0.645 (16.4) 0.193(4.90) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 30° 0.245(6.2) 0.225(5.7) FEATURES : * Plastic package has Underwriters Laboratory

Contextual Info: LITEM I s e m ic o n d u c t o r s SBL3030PT thru 3060PT 30 AMPS. SCHOTTKY BARRIER RECTIFIERS FEATU RES TO-3P • Plastic package has U /L • Flam m ability Classification 94V-0 • Exceeds environmental standards of M I L S *19500 • Metal of silicon rectifier, m ajority carrier conduction

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: SIEMENS Primary Rate Interface Signaling and Maintenance Controller PRISM PEB 3035 Preliminary Data CMOS IC Features Serial Interface • Two independent signaling/maintenance channels programmable in a - serial mode - strobe mode - time-slot assignment mode

3045PT

Abstract: 3060PT MBR3035PT MBR3060PT
Contextual Info: 0.203 5.16 Features • • • • • • 0.193(4.90) Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction.

3040pt

Abstract: SB3060PT SB3060 SB3030PT 3045PT 3060PT
Contextual Info: SB3030PT – SB3060PT W TE PO WE R SEM IC O ND UC TO R S 30A SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection High Current Capability, Low Forward Low Reverse Leakage Current High Surge Current Capability

3060PT

Abstract: 3040pt to-3p 3045PT SBL3030PT SBL3060PT
Contextual Info: SBL3030PT - SBL3060PT 30A SCHOTTKY BARRIER RECTIFIER Features • · Schottky Barrier Chip TO-3P Guard Ring Die Construction for Transient Protection Dim Min Max · · · · Low Power Loss, High Efficiency A 1.88 2.08 · Lead Free Finish, RoHS Compliant Note 3

3045Pt

Abstract: 3050PT 3060PT 3030PT MBR 3045Pt
Contextual Info: MBR3030PT - MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency

SB3040PT

Abstract: sb3060pt SB3045PT SB303 3040PT 3045PT 3060PT SB3030PT sb3040p j 122
Contextual Info: SB3030PT – SB3060PT W TE PO WE R SEM IC O ND UC TO R S 30A SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection High Current Capability, Low Forward Low Reverse Leakage Current High Surge Current Capability

5SBA20

Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
Contextual Info: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.

Contextual Info: SR3020PT SR3060PT THUR TO-247AD/TO-3P 0.645 16.4 Plastic package Underwriters Laboratory Flammability Classification 94V-0 0.203(5.16) 0.618(15.7) 0.252(6.4) 0.193(4.90) 0.225(5.7) Dual rectifier construction, positive center tap Metal silicon junction Majority carrier conduction

Contextual Info: 3035PT THRU MBR3060PT 30.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 60 Volts Current 30.0 Amperes TO-3P/TO-247AD Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

PVC30-35P

Abstract: DTS090275UDC-P5P-TK
Contextual Info: Date: 8 /1 1 /0 4 Part N o: DTS090275UDC-P5P-TK C U I INC Unit: mm Description: Power Supply 1 2 GENERAL .- . Description. 1.2 DC Output Requirements 2.1 Input Conditions” 2.2 AC Inrush Current 3 On/Off and

circuit diagram wireless spy camera

Abstract: interfacing 8051 with 300 GSM Modem datasheet PIC Microcontroller GSM Modem cash box guard project with procedure pmb 4220 interfacing 8051 with GSM Modem Siemens pmb 4220 pbc 05 ericsson Marking Code SMD databook gsm coding in c for 8051 microcontroller
Contextual Info: Contents Page Introduction . Quality Assurance . Page 3 Package Information 4 Summary of Types in Alphanumerical Order Mobile Communication ICs . 208 . 209 .

3060PT

Abstract: MBR3030PT-MBR3045PT 3040PT MBR 3045Pt 3045PT MBR3030PT MBR3060PT mbr3045pt liteon Mbr3045pt lite-on
Contextual Info: LITE-ON SEMICONDUCTOR MBR3030PT thru 3060PT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-3P FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

MBR3060PT

Abstract: 3045PT 3060PT MBR3035PT
Contextual Info: 3035PT - MBR3060PT 3035PT - MBR3060PT Features • • • • • • PIN 1 + Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier