304 FET TRANSISTOR Search Results

BUK7513-75B

Abstract: BUK7613-75B
Contextual Info: BUK75/7613-75B TrenchMOS standard level FET Rev. 01 — 14 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK75

Abstract: BUK7513-75B
Contextual Info: BUK7513-75B N-channel TrenchMOS standard level FET Rev. 02 — 25 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: D2 PA K BUK7613-75B N-channel TrenchMOS standard level FET Rev. 3 — 27 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: BUK7513-75B N-channel TrenchMOS standard level FET Rev. 02 — 25 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

75b diode

Abstract: BUK75 BUK7613-75B
Contextual Info: BUK7613-75B N-channel TrenchMOS standard level FET Rev. 2 — 17 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: D2 PA K BUK7613-75B N-channel TrenchMOS standard level FET Rev. 3 — 27 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

FET BFW61

Abstract: BFW61 v511 304 fet transistor N CHANNEL FET BFW61
Contextual Info: 711Qfl2b D0t7tiflM TS3 M P H I N BFW61 N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in aTO -72 metal envelope w ith the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers.

PH4530L

Contextual Info: PH4530L N-channel TrenchMOS logic level FET Rev. 02 — 26 January 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

Contextual Info: Part Number: Integra IGN2735M250 Preliminary TECHNOLOGIES, INC. S-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent thermal stability  Gold Metal IGN2735M250 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for

T39 diode

Contextual Info: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage,

304P

Abstract: V304P FDV304P SQT23
Contextual Info: August 1997 F A IR O H H -P SEMICONDUCTOR t m FDV304P Digital FET, P-Channei General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

Contextual Info: R A I R C H A ug ust 1997 I I- D SEM IC ONDUCTO R tm FDV304P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

Contextual Info: July 1997 FAIRCHILD SEM IC ONDUCTO R m FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

1SS SOT-23

Abstract: FDV304P
Contextual Info: B A ID C U lL n May 1997 p r e l im in a r y M IC O N D U C T O R tm FDV304P P-Channel, Digital FET General Description Features These P-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

FAIRCHILD SOT-223 MARK 032

Contextual Info: August 1997 FDV304P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

FDV304P

Abstract: FDV304 SOIC-16
Contextual Info: August 1997 FDV304P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

sot21

Contextual Info: July 1997 g A J R g H ty O S E M IC O N D U C T O R tm FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

FDC6304P

Abstract: SOIC-16
Contextual Info: July 1997 FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

1da sot-23

Abstract: 1da sot LS05-A FDC6304P SOIC-16 O443
Contextual Info: July 1997 FAIRCHILD S E M IC O N D U C T O R w FDC6304P Digital FET, Dual P-Channel General Description F e a tu re s These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

bootstrap diode

Abstract: application note gate driver with bootstrap capacitor IR switch control AN978
Contextual Info: DESIGN TIP DT 98-2 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Bootstrap Component Selection For Control IC’s By Jonathan Adams TOPICS COVERED Operation Of The Bootstrap Circuit Factors Affecting The Bootstrap Supply Calculating The Bootstrap Capacitor Value

MGM5N45

Abstract: MGM5N50 MGP5N45 MGP5N50
Contextual Info: MGM5N45 MGM5N50 MGP5N45 MGP5N50 N-CHANNEL ENHANCEMENT MODE SILICON GATE, GAIN ENHANCED MOS FIELD EFFECT TRANSISTOR These GEMFETS are designed for high voltage, high current power controls such as line operated motor controls and converters. o High Input Impedance

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

S29JL032H70

Contextual Info: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book

UPA65

Abstract: ed101
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA653TT P チャネル MOS FET スイッチング用 外形図（単位: mm） µPA653TT は，4.0 V 電源系による直接駆動が可能なスイッ チング素子です。