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    30N120 Search Results

    30N120 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TW030N120C
    Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.04 Ω@18 V, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    TRS30N120HB
    Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 30 A, 2 in 1, TO-247 Visit Toshiba Electronic Devices & Storage Corporation

    30N120 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    30N120D2
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.6KB 1
    SF Impression Pixel

    30N120 Price and Stock

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    onsemi NVBG030N120M3S

    SILICON CARBIDE (SIC) MOSFET - E
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    DigiKey () NVBG030N120M3S Digi-Reel 611 1
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    NVBG030N120M3S Cut Tape 611 1
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    Mouser Electronics NVBG030N120M3S 771
    • 1 $23.64
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    Newark NVBG030N120M3S Cut Tape 1,575 1
    • 1 $32.39
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    Richardson RFPD NVBG030N120M3S 1,600 800
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    Chip 1 Exchange NVBG030N120M3S 1,600
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    Avnet Silica NVBG030N120M3S 7 Weeks 800
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    EBV Elektronik NVBG030N120M3S 1,600 8 Weeks 800
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    New Advantage Corporation NVBG030N120M3S 1,600 1
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    Littelfuse Inc IXFB30N120P

    MOSFET N-CH 1200V 30A PLUS264
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    DigiKey IXFB30N120P Tube 545 1
    • 1 $44.70
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    RS IXFB30N120P Bulk 8 Weeks 300
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    onsemi NTBG030N120M3S

    SILICON CARBIDE (SIC) MOSFET - E
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    DigiKey () NTBG030N120M3S Digi-Reel 505 1
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    NTBG030N120M3S Cut Tape 505 1
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    Mouser Electronics NTBG030N120M3S 899
    • 1 $10.61
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    Newark NTBG030N120M3S Cut Tape 160 1
    • 1 $7.76
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    Richardson RFPD NTBG030N120M3S 800 800
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    Avnet Asia NTBG030N120M3S 160 18 Weeks 800
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    Avnet Silica NTBG030N120M3S 19 Weeks 800
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    EBV Elektronik NTBG030N120M3S 9,600 20 Weeks 800
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    New Advantage Corporation NTBG030N120M3S 8,000 1
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    IXYS Corporation IXYH30N120C3D1

    IGBT 1200V 66A TO-247
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    DigiKey IXYH30N120C3D1 Tube 476 1
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    TTI IXYH30N120C3D1 Tube 300
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    STMicroelectronics SCT30N120

    SICFET N-CH 1200V 40A HIP247
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    DigiKey SCT30N120 Tube 353 1
    • 1 $22.77
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    Mouser Electronics SCT30N120 919
    • 1 $21.41
    • 10 $20.11
    • 100 $13.65
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    Newark SCT30N120 Bulk 60 1
    • 1 $20.80
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    • 100 $19.20
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    STMicroelectronics SCT30N120 919 1
    • 1 $20.98
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    TME SCT30N120 1
    • 1 $21.54
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    Avnet Silica SCT30N120 90 17 Weeks 30
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    EBV Elektronik SCT30N120 33 Weeks 30
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    Vyrian SCT30N120 511
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    30N120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol


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    30N120 30N120 247TM E153432 IXDR30N120 PDF

    30N120

    Abstract: 30n120d
    Contextual Info: □IXYS IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcGR Tj = 25°C to 150°C; RGE= 20 k£l


    OCR Scan
    30N120 30N120 IXDT30N120 O-247 D-68623 30n120d PDF

    Contextual Info: Advanced Technical Information IXDR 30N120 D1 VCES IC25 IXDR 30N120 High Voltage IGBT with optional Diode ISOPLUSTM package = 1200 V = 60 A = 2.4 V VCE sat typ (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C C G ISOPLUS 247TM


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    30N120 30N120 247TM E153432 D-68623 PDF

    IXDR30N120

    Abstract: 30N120 5027A R30N120 30n120d1 MJ10
    Contextual Info: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol


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    30N120 30N120 247TM E153432 IXDR30N120 IXDR30N120 5027A R30N120 30n120d1 MJ10 PDF

    Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type unshielded GND electrode


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    30N1200 PDF

    30N120A

    Contextual Info: Advanced Data High Voltage IGBT with Diode IXDH 30N120AU1 VCES IC25 VCE sat typ SCSOA Capability Symbol Test Conditions V CES Tj =25°C to 150°C Vco„ T, = Maximum Ratings 25°C to 150°C; RGE= 1 M fi 1200 V 1200 V V GES Continuous ±20 V V QE„ T ransient


    OCR Scan
    30N120AU1 O-247 30N120A PDF

    30n120

    Abstract: 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600
    Contextual Info: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V C G TO-247 AD (IXDH) G E E IXDH 30N120 IXDT 30N120 G C IXDH 30N120 D1 IXDT 30N120 D1


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    30N120 30N120 O-247 O--268 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600 PDF

    Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable


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    30N1200 PDF

    Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable


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    30N1200 PDF

    Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type non-flush GND electrode


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    30N1200 PDF

    Contextual Info: Capacitive Sensors CFAK 30N1200 Capacitive Sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm


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    30N1200 PDF

    Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo mounting type unshielded nominal sensing distance Sn 25 mm nominal sensing distance Sn adjustable 5 . 30 mm temperature drift


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    30N1200 PDF

    IXDH30N120AU1

    Abstract: 30N120A
    Contextual Info: High Voltage IGBT with Diode IXDH 30N120AU1 IXDT 30N120AU1 V CES 1200 V 50 A 2.5 V ^C25 V CE sat typ S hort C ircuit SOA Capability Prelim inary Data Symbol Test Conditions V CES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES


    OCR Scan
    30N120AU1 O-268 IXDH30N120AU1 30N120A PDF

    Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type non-flush GND electrode


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    30N1200 PDF

    30N120D1

    Abstract: 30n120d 30N120 T30N120 ixdh 30n120d1
    Contextual Info: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Preliminary Data VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V E IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1


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    30N120 30N120 IXDH30N120 D-68623 30N120D1 30n120d T30N120 ixdh 30n120d1 PDF

    30n12

    Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm temperature drift


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    30N1200 30n12 PDF

    IXDH30N120

    Abstract: 30N120 IXDH30N120D1 30N120D1 30n12
    Contextual Info: IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ VGES VGEM Continuous


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    30N120 30N120 IXDH30N120 IXDH30N120 IXDH30N120D1 30N120D1 30n12 PDF

    Contextual Info: IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V IC25 = 60 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode C C G G E Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ VGES VGEM Continuous Transient IC25 IC90 ICM TC = 25°C


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    30N120 30N120 IXDH30N120 PDF

    diode 439

    Abstract: 30N120 IXDR30N120 R30N120
    Contextual Info: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol


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    30N120 30N120 247TM E153432 IXDR30N120 diode 439 IXDR30N120 R30N120 PDF

    30N120AU1

    Abstract: robot control TO-268 IXDH30N120AU1
    Contextual Info: High Voltage IGBT with Diode IXDH 30N120AU1 IXDT 30N120AU1 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.5 V Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    30N120AU1 O-268 30N120AU1 robot control TO-268 IXDH30N120AU1 PDF

    Contextual Info: 30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


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    NGTB30N120IHRWG NGTB30N120IHR/D PDF

    Contextual Info: 30N120CN / 30N120CN Data Sheet August 2002 75A, 1200V, NPT Series N-Channel IGBT Features The 30N120CN and 30N120CN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


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    HGTG30N120CN HGTG5A30N120CN HGT5A30N120CN TA49281. PDF

    Contextual Info: Capacitive proximity sensors CFAK 30 Sn = 30 mm Capacitive proximity sensors sample drawing 72 58 M30 x 1,5 SW 36 LED Pot sample picture general data special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable


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    30N1200 30N3200 30P1200 30P3200 PDF

    Contextual Info: Capacitive sensors Versatile, contactless, durable Edition 2012/2013 With capacitive sensors from Baumer you can complete almost any task. Visibly better: Baumer sensors. The Baumer Group is an internationally leading manufacturer of sensors and system solutions for factory and process automation. Partnership, precision and


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    CH-8501 0x/12 11xxxxxx PDF