MJ10 Search Results

MJ10020

Abstract: MJ10021 mj1002
Contextual Info: Æ&m o s p e c SWITCH MODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10020 The MJ10020 and MJ10021 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

diode 400V 4A

Abstract: vce 500v NPN Transistor MJ10007
Contextual Info: NPN MJ10007 SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)

MJ10023

Abstract: application MJ10023 npn 20A power Diode 20A DARLINGTON 20A transistor IC 12A
Contextual Info: MJ10023 Silicon NPN Power Darlington Transistor GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. TO-3 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf

MJ10009

Abstract: 1N4937 2N3762 MTP3055E
Contextual Info: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,

MJ10000

Contextual Info: NPN MJ10000 SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)

Contextual Info: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)

MJ10014

Abstract: MJ10013 MJ-10013
Contextual Info: Ü&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN MJ10013 MJ10014 The MJ10013 and MJ10014 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

MJ10006

Abstract: MJ10007 umi 150 5A 250V 5 amp npn darlington power transistors MJ-10006 MJ-10007
Contextual Info: ÆàMOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10006 MJ10007 The MJ10006 and MJ10007 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

MJ10016HX

Contextual Info: !4bE D • b3b72S4 DORS^QS MOTOROLA SC 7 ■MOTt 7^2^27 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10016HX, HXV NPN Silicon Power Darlington Transistor DM0 m in i Discrete Military Operation . .designed for high-voltage, high-speed power switching in inductive circuits where fall

Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 MJ10005 FAX: (973) 376-8960 SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode 20 AMPERE NPN SILICON POWER DARLINGTON

Contextual Info: tSstni-Conauctoi Lpi , L/nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ10041 MJ10044 MJ10047 26,50, and 100 AMPERE - NPN SILICON POWER DARLINGTON TRANSISTOR 25 kVA ENERGY MANAGEMENT SERIES

transistor mtp3055e

Abstract: 1N4937 2N3762 MJ10009 MTP3055E mtp3055
Contextual Info: MOTOROLA Order this document by MJ10009/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ10009*  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON

MJ10002

Abstract: MJ10003
Contextual Info: S W ITC H M O D E SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN MJ10002 MJ10003 The MJ10002 and MJ10003 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

kt 1118

Abstract: MJ10000 MJ10001
Contextual Info: SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS The MJ10000 and MJ10001 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

DIODE 40c 0649

Abstract: MJ100B3D45
Contextual Info: M O T O R O L A SC SbE D XSTRS/R F O rder th is data sheet by MJ100B3D45/D b 3 b 7 E S 4 QD^lEflt. D MOTOROLA SEMICONDUCTOR TECHNICAL DATA m € NPN Silicon Power Transistor Module Energy M anagem ent Series DUAL DARLINGTON POWER TRANSISTOR 100 AMPERES 450 VOLTS

application MJ10023

Abstract: BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,

MJH11021 equivalent

Abstract: BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)

MJ10016

Abstract: MJ10015 1N4937
Contextual Info: ON Semiconductort MJ10015 MJ10016 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for

222A

Abstract: 1N4937 MJ10023 mj1002
Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10023 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated switchmode

60 amp npn darlington power transistors

Abstract: RB650
Contextual Info: SOLID STATE INC. 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10022 The MJ10022 and MJ10023 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits

npn darlington 400v 10a

Abstract: npn darlington 6A 400V MJ10012 400V to 6V DC Regulator Darlington Transistors MJ-10012
Contextual Info: Inchange Semiconductor Product Specification MJ10012 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage,high current ・DARLINGTON APPLICATIONS ・Automotive ignition ・Switching regulator ・Motor control applications PINNING

Contextual Info: l c/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MJ10042 MJ10045 MJ10048 25, GO, and 100 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 25 KVA ENERGY MANAGEMENT SERIES SWITCHMODE DARLINGTON TRANSISTORS

MJ-10000

Contextual Info: ^E.mi-Condu<itoi ^Pioduch, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON

MJ10000

Abstract: MJ10001 1N4937 voltage regulators 6 amp to3
Contextual Info: MOTOROLA Order this document by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,