30J45 Search Results

GTO ABB 5SGA 2046

Abstract: IG 2200 19
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

vt 1202

Abstract: ABB thyristor 5 IP350K gto 5sga
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 2.20 0.60 2800 V A kA V Gate turn-off Thyristor 5SGA 30J4502 mΩ V Doc. No. 5SYA 1202-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

30J4502

Abstract: capacitor abb 5sgf30j4502 GTO thyristor ABB
Contextual Info: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 24 VT0 = 1.80 rT = 0.70 VDClink = 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V Doc. No. 5SYA 1211-04 April 98 Features The 5SGF 30J4502 is a 85 mm buffered layer GTO with exceptionally low dynamic and static

Contextual Info: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 25 VT0 = 1.90 rT = 0.53 VDClink = 2200 V A kA V Gate turn-off Thyristor 5SGA 30J4505 mΩ V Doc. No. 5SYA 1204-04 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

GTO thyristor ABB

Abstract: ABB thyristor 5 GTO ABB GTO thyristor gto switching test abb 5sgf30j4502
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 1.80 0.70 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V PRELIMINARY Doc. No. 5SYA 1211-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

gto Gate Drive

Abstract: gto Gate Drive circuit GTO thyristor ABB GTO ABB thyristor 5 GTO ABB
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 30 1.17 0.31 2800 V A kA V Gate turn-off Thyristor 5SGT 30J4502 mΩ V PRELIMINARY Doc. No. 5SYA 1215-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

30j45

Abstract: 5STH 30J4501
Contextual Info: VDRM VRRM IPULSE VDcmax = = = = 4.5 18 110 2.8 kV V kA kV High Current High di/dt Switch for Pulsed Power Applications 5STH 30J4501 • • • • • • • • Features Asymmetric Design For Single or Repetitve Pulse Applications Very High di/dt Capability

1419

Abstract: capacitor abb
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 24x103 2.2 0.6 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 30J4502 Doc. No. 5SYA1202-03 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

5STH30J4501

Abstract: 5STH 30J4501 tvjm
Contextual Info: VDRM VRRM IPULSE VDcmax = = = = 4.5 18 110 2.8 kV V kA kV High Current High di/dt Switch for Pulsed Power Applications 5STH 30J4501 Doc. No. 5SYA 08PP-01 Oct. 01 • • • • • • • • Features Asymmetric Design For Single or Repetitve Pulse Applications

ABB 5SGA

Abstract: ABB thyristor 5 GTO thyristor ABB
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 25 1.90 0.53 2200 V A kA V Gate turn-off Thyristor 5SGA 30J4505 mΩ V Doc. No. 5SYA 1204-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

Contextual Info: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 24 VT0 = 2.20 rT = 0.60 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGA 30J4502 mΩ V Doc. No. 5SYA 1202-03 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 30 VT0 = 1.17 rT = 0.31 VDClink = 2800 Gate turn-off Thyristor V A kA V mΩ V 5SGT 30J4502 PRELIMINARY Doc. No. 5SYA 1215-03 Mar. 97 Features The 5SGT 30J4502 is an 85 mm buffered layer, Transparent Emitter non-shorted anode

5SDF01R2501

Abstract: 5SGA 5SGA30J2501 RTK 031
Contextual Info: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­

Contextual Info: f P n fl n n U P U U L iu PW M S TE P -U P d c / d c c o n v e r t e r w i t h VOLTAGE REG ULATO R A N D D ETEC TO R R S 5 R M S E R IE S OUTLINE The R S 5 R M Series are step-up DC/D C con verter IC s equipped w ith a voltage regulato r V R and a voltage

GTO thyristor Curve properties

Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
Contextual Info: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by