30JIH Search Results

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching

Contextual Info: MITSUBISHI Pch POWER MOSFET FX30SMJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30SMJ-2 OUTLINE DRAWING Dimensions in mm .4.5. 15.9 max 1.5 S S < >3.2 hf 4 T Î © 5.45 0.6 T P1 T • 4 V D R IV E •V dss .-1 0 0 V

FX50SMJ-2

Abstract: FX50SMJ
Contextual Info: MITSUBISHI Pch POWER MOSFET FX50SMJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm .4.5. 15.9 max 1.5 | 3.2 kr 4.4 1.0 © 5.45 5.45 0.6 o • 4V DRIVE • V d s s .-100V

MOSFET 20 NE 50 Z

Contextual Info: MITSUBISHI Nch POWER MOSFET FS100SMJ-03 HIGH-SPEED SWITCHING USE FS100SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX f 3.2 5.45 0.6 o i 4V DRIVE V d s s . 3 0 V rDS ON (

Contextual Info: HIP2060 Semiconductor 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that con­ sists of two matched N-Channel enhancement-mode MOS transistors. The advanced Harris PASIC2 process technol­

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30SMJ-03 HIGH-SPEED SWITCHING USE FS30SMJ-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. / 3.2 w * 5.45 4 V D R IV E V d s s . 3 0 V q rDS ON (MAX). 38m i2

FX30UMJ-3

Contextual Info: MITSUBISHI Pch POWER MOSFET FX30UMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30UMJ-3 OUTLINE DRAWING Dimensions in mm • 4 V D R IV E • V dss .-1 5 0 V . • rDS O N (M AX) . . 100m i2 • Id . . -3 0 A

D03316P-333

Abstract: CI LT1372 D03316P-683 metal film fused resistor 47 1N5818 1N914 LT1507 LT1578 LT1578C LT1578CS8
Contextual Info: D M U M L R E L E A S E Final Electrical Specifications LT1578 u f m TECHNOLOGY 1.5A, 200kHz S tep-D ow n S w itching R egulator S ep tem b er 1999 FCRTURCS D C S C R IP TIO n • Constant 200kHz Switching Frequency ■ Reduced EM I Generation The LT 1578 is a 200kHz monolithic buck mode switching

mosfet 350v 30a

Contextual Info: APT5010JVRU2 A D VA N C ED P o w er Te c h n o lo g y ' soov 44A 0.100a POWER MOSV Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MO SFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

MOSFET 20 NE 50 Z

Contextual Info: MITSUBISHI Neh POWER MOSFET FS100VSJ-03 HIGH-SPEED SWITCHING USE FS100VSJ-03 OUTLINE DRAWING Dim ensions in mm L J q w e 6 +i CD Q w r q w e r 4V DRIVE V dss . 3 0 V rDS ON (M A X ). A.7mLl

Narva

Abstract: TX5B Heft 54 Scans-048 aim ac hoe rv heft hcj 6a IH400 siek 1 AE 1000-SS
Contextual Info: p,. c . r y p / i E B C n o n P A H O H H b I M B O n P M H H H B O P A M H 3 A aT e/ibC T B o „ T e x H iK a " K m ob — 1 9 7 0 M 6<D0. 31 0 8 3 T95 YAK 621.327.4/9.(031) CnpaBOHHHK no hohhum npnöopaM. T y p .n e b R . C. «TexHÍK», 1970, 180 crp.

2T908A

Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE FS10ASJ-03 ' 4V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYP.) .30V . 75mi2 .10A 35ns APPLICATION M otor control, Lamp control, Solenoid control

up 6103 s8 equivalent

Abstract: up 6103 s8 CI LT1372 metal film fused resistor 47 1N5818 1N914 LT1376 LT1576 LT1576C LT1576CS8
Contextual Info: r r u LT1576/LT1576-5 im i TECHNOLOGY 1.5A, 200kHz S tep-D ow n S w itching R egulator F€fflTUR€S D C S C R IP TIO n • Constant 200kHz Switching Frequency ■ 1.21V Reference Voltage ■ Fixed 5V Output Option ■ Easily Synchronizable ■ Uses All Surface Mount Components

"MOSFET A5 VNA

Abstract: 710023
Contextual Info: MITSUBISHI Pch POWER MOSFET FX30SMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4 .5 . 15.9 m ax 1.5 | 3.2 mr ¥ b f * © 5 .4 5 0.6 0( • 4 V D R IV E • V ds s .-1 5 0 V

40n60 transistor

Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
Contextual Info: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30KMH-03 HIGH-SPEED SWITCHING USE ¡ FS30KMH-03 OUTLINE DRAWING Dimensions in mm +0 / ./ / ' / ' • 2.5V DRIVE • VD S S . •■ 30V • rDS ON (MAX) .