30NSEC Search Results

dc motor speed control tl494

Abstract: DS0026 power mosfet driver tl494 dc to ac inverter TC427 tl494 inverter circuit Power Supply TL494 TC426 TC427CPA tc428 application tl494 dc to ac inverters
Contextual Info: TC426 TC427 TC428 1.5A Dual High-Speed Power Mosfet Drivers FEATURES GENERAL DESCRIPTION • High-Speed Switching CL = 1000pF . 30nsec ■ High Peak Output Current . 1.5A ■ High Output Voltage Swing . VDD – 25mV

tl494 inverter circuit

Abstract: TC427CPA DS0026 power mosfet driver tl494 inverter tl494 dc to ac inverters tl494 dc to ac tl494 dc to ac inverter TC426 tl494 inverter converter data sheet tl494
Contextual Info: 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC426 TC426 TC427 TC427 TC428 TC428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • High-Speed Switching CL = 1000pF . 30nsec ■ High Peak Output Current . 1.5A

Contextual Info: MN379 r FLASH-CONVERTER COMPATIBLE T/H AM PLIFIER •' . - - Ji H i M IC R O N E T W O R K S DESCRIPTION FEATURES • Designed to Directly Drive Flash Converters • 2psec Maximum Aperture Jitter • Capacitive Loads to 500pF • 30nsec Max Acquisition Time

TC428

Abstract: TC4427ACPA TC4426A TC4426ACOA TC4426ACPA TC4426AEOA TC4426AEPA TC4427A TC4428A TC4427AE
Contextual Info: M TC4426A/TC4427A/TC4428A 1.5A Dual High-Speed Power MOSFET Drivers Package Type Features • High Peak Output Current – 1.5A • Wide Operating Range - 4.5V to 18V • High Capacitive Load Drive Capability – 1000pF in 25nsec Typ. • Short Delay Times – 30nsec Typ.

0C28

Abstract: 200v 3A ultra fast recovery diode 6VF20CTF 40 hmr 150 DIODE 6VF10CT 6VF10CTF 6VF20CT
Contextual Info: FAST RECOVERY DIODE 6VF10CT 6VF20CT 6VF10CTF 6VF20CTF 6.6A/100~200V/trr : 30nsec FEATURES 2.38MAX .094 2.38MAX (.094) ° TO-251AA'Case • TO-252AA Case, Surface Mount Device 0.9Í.035) NOMENAL 1_ ° Ultra - Fast Recovery ° Dual Diodes - Cathode Common

Contextual Info: FAST RECOVERY DIODE C6P10F C6P20F F6P10F F6P20F 6.6A/100'-~200V/trr : 30nsec FEATURES ° Similar to T0-220AB Case °Fully Mold Isolation F-Type ° Dual Diodes - Cathode Common ° Ultra - Fast Recovery ° Low Forward Voltage Drop ° High Surge Capability

3IDF2

Abstract: 31DF2 7 31DF2 diode diode 3IDF2 31DF2 200v 3A ultra fast recovery diode 31DF1 31DF
Contextual Info: FAST RECOVERY DIODE 3.3A/100— 200V/trr : 30nsec 31DF1 31DF2 FEATURES ^-5.8 .23 DIA 1 ° Ultra - Fast Recovery ° Low Forward Voltage Drop l.Sf.OSWp.r* 1.3C051) 8 Low Power Loss, High Efficiency ° High Surge Capability »100 Volts thru 600 Volts Types Available

30VF30

Abstract: 30VF30F 30VF40 30VF40F
Contextual Info: FAST RECOVERY DIODE 30VF30 30VF40 30VF30F 30VF40F 3.3A/300~400V/trr : 30nsec FEATURES TO-251AA Case • TO-252AA Case, Surface Mount Device ° Ultra - Fast Recovery o Low Forward Voltage Drop ° Low Power Loss o High Surge Capability ® 100 Volts thru 600 Volts

11EFS3

Abstract: 11EFS4
Contextual Info: FAST RECOVERY DIODE l .l A /3 0 0 ~ 4 0 0 V /t r r : 30nsec 11EFS3 11EFS4 FEATURES 2.7 .106 t ^ t * MAX U1A • Miniature Size • Ultra - Fast Recovery 0.601024) n IA 0.54(.021) » Low Forward Voltage Drop .27(1.06) MIN ° L o w Power Loss, High Efficiency

DAC63CM

Abstract: DAC63BG mc10115 ecl DAC63CG MCI0108
Contextual Info: BURR-BROW NS E DAC63 ] Ultra-High Speed DIGITAL-TO-ANALOG CONVERTER FEATURES • ADJUSTABLE LOGIC THRESHOLD FOR IDEAL SWITCHING • 12-BIT RESOLUTION AND ACCURACY • 30nsec SETTLING TIME MAJOR CARRY CO • INTERNALLY-BYPASSED SUPPLY LINES TO MINIMIZE SETTLING TIME

EM641FT8

Abstract: EM641FT8V
Contextual Info: EM641FT8 Low Power, 512Kx8 SRAM Document Title 512K x8 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Nov. 20, 2007 Preliminary 0.1 0.1 Revision IDR Current from 1.5uA to 7uA Dec. 5, 2007 tOE from 25nsec to 30nsec with 55ns part

Contextual Info: FAST RECOVERY DIODE 1.1 A /30 0— 4 0 0 V /trr : 30nsec EC11FS3 EC11FS4 FEATURES » Miniature Size, Surface Mount Device 2.21.087 1.81.071) 5.3C209) —T7CT555- • Ultra - Fast Recovery _ 4.7 -168)— . 4.3Í.169) 0.21.008) ' O.O(.OOO) • Low Forward Voltage Drop

F6P20F

Abstract: F6P10F C6P20F C6P10F 3a ultra fast diode
Contextual Info: FAST RECOVERY DIODE C6P10F C6P20F F6P10F F6P20F 6.6A/100— 2 0 0 V /trr : 30nsec 3.K.122 M AX FEATURES ° S i m i l a r to T 0 - 2 2 0 A B Ca se °Ful l y Mold Isolation 10.3 .405) P MAX •.81.189] MAX, w (F-Type) 6.9(.272) 6.3(.248) i 0 Dual Diodes - Cathode Common

2VF30CT

Abstract: 2VF30CTF 2VF40CT 2VF40CTF 0408l 16UG
Contextual Info: FAST RECOVERY DIODE 2VF30CT 2VF40CT 2VF30CTF 2VF40CTF 2 .2 A /3 0 0 — 4 0 0 V /trr : 30nsec FEATURES 2 .3 8 M A X .094 ° TO-251AA Case n • TO-252AA Case, Surface Mount Device Ultra - Fast Recovery Dual Diodes - Cathode Common ° ° Low Forward Voltage Drop

11EFS1

Contextual Info: FAST RECOVERY DIODE l.lA / 1 0 0 ~ 2 0 0 V / tr r : 30nsec 11EFS1 11EFS2 FEATURES 2.7 .1 0 6 ID [ , ° Miniature Size MAX U1A ° Ultra - Fast Recovery o Low Forward Voltage Drop 0 .6 0 1 0 2 4 n [ . 0.541.021) ° Low Power Loss, High Efficiency _ 2711.06)

SDR656CTM

Abstract: 40amps diode
Contextual Info: PRELIMINARY SDR656CTM & Z SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 1.30 Designer's Data Sheet FEATURES: • Hyper Fast Recovery: 30nsec Maximum • High Surge Rating • Low Reverse Leakage Current

Contextual Info: SDR0360 series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 3 AMP, 30nsec SMD HyperFast Rectifier Low Forward Voltage Designer’s Data Sheet 400 - 600 VOLTS

TC4469

Abstract: TC4404COA TC4404CPA TC4404EOA TC4404EPA TC4404MJA TC4405COA TC4405CPA TC4405EOA TC4405EPA
Contextual Info: M TC4404/TC4405 1.5A Dual Open-Drain MOSFET Drivers Features General Description • Independently Programmable Rise and Fall Times • Low Output Impedance – 7Ω Typ. • High Speed tR, tF – <30nsec with 1000pF Load • Short Delay Times – <30nsec

TC4422

Abstract: TC4421 TC4422EPA TC4421CAT TC4421CPA TC4421EPA TC4421MJA TC4422CAT TC4422CPA TC4422MJA
Contextual Info: M TC4421/TC4422 9A High-Speed MOSFET Drivers Package Type Features • • • • Tough CMOS Construction High Peak Output Current: 9A High Continuous Output Current: 2A Max Fast Rise and Fall Times: - 30nsec with 4,700pF Load - 180nsec with 47,000pF Load

diode 222r

Abstract: 400v 3a ultra fast recovery diode 251AA 6VF30CT 6VF30CTF 6VF40CT 6VF40CTF
Contextual Info: FAST RECOVERY DIODE 6VF30CT 6VF40CT 6VF30CTF 6VF40CTF 6 .6 A /3 0 0 ~ 4 0 0 V /trr : 30nsec FEATURES ° TO—251AA Case o TO-252AA Case, Surface Mount Device ° Ultra - Fast Recovery 2.8 NOM INAL 0.58M A XJL f .023 0,6(.024) MIN 0 Dual Diodes - Cathode Common

Contextual Info: FAST RECOVERY OIODE 11DF3 11DF4 l.lA /3 0 0 ~ 4 0 0 V /trr: 30nsec FEATURES ° Miniature Size ° Ultra - Fast Recovery ° Low Forward Voltage Drop »Low Power Loss, High Efficiency ° High Surge Capability • 100 Volts through 400 Volts Types Available ° 52mm Inside Tape Spacing Package Available

Contextual Info: FAST RECOVERY DIODE 30VF30 30VF40 30VF30F 30VF40F 3.3A/300~ 400V/trr : 30nsec 2.38M AX .094 FEATURES 2.38M AX (.0941 • TO-251AA Case n o TO-252AA Case, Surface Mount Device ^, 6.221245) 0.9(.035) NO M IN AL ° Ultra - Fast Recovery 2.8 N O M IN AL '(-059)

Contextual Info: FAST RECOVERY DIODE EC11FS1 EC11FS2 1.1A/100 ~200V/trr : 30nsec FEATURES oMiniature Size, Surface Mount Device 5.3 209 “ 4.7(.185r -^_4.7(.168)— « 4.3(.169) ° Ultra - Fast Recovery ° Low Forward Voltage Drop 1 2.71.106) 2.3(.Q91) m J É ° Low Power Loss, High Efficiency

Contextual Info: CHENMKO ENTERPRISE CO.,LTD BAS21N1PT SURFACE MOUNT FAST SWITCHING DIODE VOLTAGE RANGE 250 Volts CURRENT 200 mAmpere APPLICATION * Ultra high speed switching FBPT-923 FEATURE * Small surface mounting type. FBPT-923 * High speed. (TRR=30nSec Typ.) * Suitable for high packing density.