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    2sd1763

    Contextual Info: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor —120 V, —1.5A 2SB1236 / 2SB 1186 •F e a tu re s 1 ) High breakdown voltage. (BV ceo= —120V) 2 ) Low collector output capacitance. (Typ. 30pFatVcB—•—10V) 3 ) High transition frequency. (fr—SOMHz)


    OCR Scan     		2SB1236/2SB1186 2SC4132 2SD1857 2SD2343 2SD1763 2SB1236 30pFatVcBâ 2SD1857/2SD1763. 2SB1236 2SB1186 2sd1763 PDF

    05c06

    Abstract: SAMSUNG CHIP CAPACITOR CL series H63A cap. 1000 uf 50v dip
    Contextual Info: Multilayer Chip Capacitors – High Frequency FEATURE Inner Electrode Ceramic Body Cu or Ni Outer Electrode Cu Ni Sn/Pb - LOW ESR at high frequencies - High Q at high frequencies - Stable C0G temperature coefficient - Ultra-Miniature Size - Highly Reliable Performance


    Original     		PDF

    5218 chip ic

    Abstract: 53S881F
    Contextual Info: ADV M IC R O 14‘ E D I MEMORY 0257555 0027871 a 2 5 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS T APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable tltanlum-tungsten fuses TiW guaran­


    OCR Scan     		53/63S881/A 1024x8 30-ns 24-pin 600-mil 53/63S881 53/63S881A 30pFA 5218 chip ic 53S881F PDF