30PIN SAMSUNG Search Results
30PIN SAMSUNG Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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CRT TV BLOCK DIAGRAM
Abstract: EMC6N300 samsung crt tv block diagram HDTV block diagram r5c841 CK410M 1257 FCBGA TV samsung CRT AD1981 Codec BCM5788
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X25/X20 EMC6N300 w/533MHz) 479Pin 533MT/S 30Pin M22/M24/M26) CK-410M R5C841 609BGA CRT TV BLOCK DIAGRAM EMC6N300 samsung crt tv block diagram HDTV block diagram r5c841 CK410M 1257 FCBGA TV samsung CRT AD1981 Codec BCM5788 | |
transistor c4204
Abstract: C4204 C4208 J101 30pin samsung P4208 KS86C4204
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KS86C4204/C4208/P4208 21-86-C4204/C4208/P4208 KS86C4204/C4208/P4208 21-86-C4204/C4208/P4208-0699 KS88C4204/C4208 KS86C4204/P4208. 28-Pin 30-PIN transistor c4204 C4204 C4208 J101 30pin samsung P4208 KS86C4204 | |
KS57C0504
Abstract: KS57C0502 KS57P0504 SAM47 C0504
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KS57C0502/C0504/P0504 KS57C0502/C0504 SAM47 KS57P0504 KS57C0502/C0504. 30-pin KS57C0504 KS57C0502 SAM47 C0504 | |
c4104
Abstract: P4104 KS86C4004 KS86C4104
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KS86C4004/P4004/C4104/P4104 SAM87RI KS86C4004/C4104 10-bit KS86C4104/P4104 c4104 P4104 KS86C4004 KS86C4104 | |
S3P9428
Abstract: sound MEMORY 5V 28 pins
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S3C9424/C9428/P9428 SAM87RI S3C9424/C9428/P9428 SDIP/32 OP/28SOP S3P9428, A15-A0) S3P9428 sound MEMORY 5V 28 pins | |
Microcontroller AT89S52 40 pin diagram
Abstract: C4208 zero crossing detector KS86C4204 KS86P4208
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KS86C4204/C4208/P4208 SAM87RI KS86C4204/C4208/P4208 KS86P4208, A15-A0) 0000H Microcontroller AT89S52 40 pin diagram C4208 zero crossing detector KS86C4204 KS86P4208 | |
PD16877
Abstract: UPA1602GS MOS FET Array UPA1600CX PD16814 uPD16833AGS-9JH PD16805 mil grade LED lamps sop array fet 30-pin nec
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G11903EJ5V0PF00 PD16877 UPA1602GS MOS FET Array UPA1600CX PD16814 uPD16833AGS-9JH PD16805 mil grade LED lamps sop array fet 30-pin nec | |
C9414
Abstract: S3C9404 S3C9414
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S3C9404/P9404/C9414/P9414 SAM87RI S3C9404/C9414 S3P9404/P9414, A15-A0) 0000H C9414 S3C9404 S3C9414 | |
C4104
Abstract: Microcontroller AT89S52 40 pin diagram P4104 TCON 30 pin interface P4004 samsung tcon zero crossing three signals KS86C4004 KS86C4104 P4-10-413
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KS86C4004/P4004/C4104/P4104 SAM87RI KS86C4004/C4104 KS86P4004/P4104, A15-A0) 0000H C4104 Microcontroller AT89S52 40 pin diagram P4104 TCON 30 pin interface P4004 samsung tcon zero crossing three signals KS86C4004 KS86C4104 P4-10-413 | |
D780948
Abstract: D7891 NEC 789166 D78011 789071 D753036 d78014 d78987 780204 d78013x
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78K0S U14450EJ5V0PF00 101Yin D780948 D7891 NEC 789166 D78011 789071 D753036 d78014 d78987 780204 d78013x | |
KMM581000BN-6
Abstract: ic sc 4145 KM44C1000BJ KMM581000BN
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KMM581000BN KMM581000BN-6 KMM581000BN-7 KMM581000BN-8 110ns 130ns 150ns KMM581000BN KM44C1000BJ ic sc 4145 | |
KM41C4000AContextual Info: S A M S UN G E L E C T R O N I C S INC tME ]> • 7 T b M : m 2 D G 1 M 5 0 4 flOO ■ Sn6K KMM584020A DRAM MODULES 4M X 8 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020A is a 4M bit x 8 Dynamic |
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KMM584020A KMM584020A KM41C4000AU 20-pin 30-pin 22/iF 130ns KMM584020A-8 150ns KM41C4000A | |
LN65VContextual Info: DRAM MODULES KMM581020AN 1 M x 8 DRAM SIMM Memory Module with Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581020AN is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581020AN co n sist o f tw o 4M b it DRAMs |
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KMM581020AN KMM581020AN KM44C1020ALJ 20-pin 30-pin 22/iF KMM581020AN-7 LN65V | |
kmm58256c
Abstract: kmm58256
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KMM58256CN KMM58256CN-6 KMM58256CN-7 KMM58256CN-8 110ns 130ns 150ns KMM58256CN KM44C256CJ kmm58256c kmm58256 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung |
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KMM5916000/T KMM5916000/T KM41C16000/T 24-pin 30-pin 22/uF KMM5916000-6 110ns KMM5916000-7 | |
Contextual Info: SAMSUNG ELECTRONICS INC b?E » 7 ^ 4 1 4 2 OOlSDfit 22Ì I SMGK • KMM591000BN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000BN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung |
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KMM591000BN KMM591000BN KM44C1000BJ 20-pin KM41C1000CJ 30-pin 110ns KMM591000BN-7 | |
timer circuit diagram
Abstract: F92h C0504 F80H P0504 BUZ 41 A diagram F93h buzzer
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KS57C0502/C0504/P0504 21-57-C0502/C0504/P0504-0198 KS57C0502/C0504/P0504 KS57C0502/C0504 21-57-C0502/C0504/P0504-0198, F57C0502/C0504/P0504 30-PIN TB570502A/TB570504A timer circuit diagram F92h C0504 F80H P0504 BUZ 41 A diagram F93h buzzer | |
Contextual Info: KMM58256BN DRAM MODULES 2 5 6 K X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam sung KM M 58256BN consist of two 1M bit DRAMs |
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KMM58256BN 58256BN 44C256BJ 20-pin 30-pin 58256BN- 130ns 150ns | |
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DG1S234 7T2 MSriGK KMM5916100/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAC tRC 60ns 15ns 110ns KMM5916100-7 70ns 20 ns 130ns KMM5916100-8 80ns |
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DG1S234 KMM5916100/T 110ns KMM5916100-7 130ns KMM5916100-8 KMM5916100/T KM41C16100/T 24-pin | |
Contextual Info: SAM SUNG E L E C T R O N I C S INC b7E D O D I S Ö E T StB KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM591000C is a 1M b i t x 9 Dynamic RAM high density memory module The S a m s u n g |
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KMM591000C KMM591000C 591000C 1000C 20-pin 30-pin 110ns KMM591000C-7 130ns KMM591000C-8 | |
KMM581000BN
Abstract: KMM581000BN-7 KM44C1000BJ KMM581000BN-6 KMM581000
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KMM581000BN KMM581000BN KM44C1000BJ 20-pin 30-pin 22juF KMM581000BN-6 KMM581000BN-7 KMM581000 | |
41C16000Contextual Info: SAMSUNG ELECTRONICS INC L.7 E D • KMM5Ô16000/T 7 «it.4 m S 001522^ 32S » S M 6K DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung |
OCR Scan |
16000/T 16Mx8 KMM5816000/T 5816000/T 41C16000/T 24-pin 30-pin KMM5816000-6 110ns KMM5816000-7 41C16000 | |
KM41C4000AContextual Info: KMM584020A DRAM MODULES 4M X 8 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020A is a 4M bit x 8 Dynamic RAM high density memory module. The Samsung KMM584020A consist o f eight KM41C4000ALJ DRAMs |
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KMM584020A KMM584020A KM41C4000ALJ 20-pin 30-pin 22/xF M584020A-7 KM41C4000A | |
0.22j
Abstract: KMM59256CN-7 .022J CAPACITOR KMM59256CN "at command" Samsung
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7Tbm45 KMM59256CN KMM59256CN KM44C256CJ 20-pin 256J-256K 18-pin 30-pin 0.22j KMM59256CN-7 .022J CAPACITOR "at command" Samsung |