KMM581000An-8
Abstract: No abstract text available
Text: DRAM MODULES KMM581000AN 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 581000A N consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package
|
OCR Scan
|
PDF
|
KMM581000AN
581000AN
81000A
44C1000AJ
20-pin
30-pin
130ns
581000AN-
150ns
KMM581000An-8
|
KMM581000N8
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC M2E D H KMM581000N 7=^4142 0Q10434 b DRAM MODULES 1M x8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N Is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs
|
OCR Scan
|
PDF
|
KMM581000N
0Q10434
KMM581000N
KM44C1000J-1M
20-pin
30-pin
KMM581000N-8
150ns
KMM581000N-10
KMM581000N8
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME » • 7Tfcj4142 D 0 1 4 4 4 4 50b ■ SÎ1G K KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung
|
OCR Scan
|
PDF
|
7Tfcj4142
KMM581000AN
581000AN
81000A
KM44C1OOOAJ
20-pin
30-pin
581000AN-
130ns
|
KMM581000N8
Abstract: No abstract text available
Text: KMM581000N DRAM MODULES 1 M x 8 D R A M S IM M M em ory M odule FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs KM44C1000J-1M x 4 in 20-pin SOJ package mounted
|
OCR Scan
|
PDF
|
KMM581000N
150ns
180ns
KMM581000N
KM44C1000J-1M
20-pin
30-pin
22/iF
KMM581000N8
|
Untitled
Abstract: No abstract text available
Text: KMM581000C DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000C is a 1M b it x 8 Dynamic RAM high density memory module. The Samsung KMM581000C consist of eight KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
|
OCR Scan
|
PDF
|
KMM581000C
KMM581000C-6
KMM581000C-7
KMM581000C-8
110ns
130ns
150ns
KMM581000C
KM41C1000C
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG E L E C T R O N I C S INC b?E D • KMM581000C 001 S 02 M Tfll S N G IC DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000C is a 1M b it x 8 Dynamic RAM high density memory module The Samsung
|
OCR Scan
|
PDF
|
KMM581000C
KMM581000C
KM41C1000C
20-pin
30-pin
110ns
KMM581000C-7
130ns
KMM581000C-8
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC m 42E D 7^4142 KMM581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung
|
OCR Scan
|
PDF
|
KMM581000B
581000B
KMM581
KM41C1OOOBJ
20-pln
30-pin
581000B-
130ns
150ns
|
1Mx9 DRAM 30-pin SIMM
Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C
|
OCR Scan
|
PDF
|
1Mx32
1Mx33
1Mx36
1Mx40
2Mx32
2Mx36
1Mx9 DRAM 30-pin SIMM
KMM594000C
30 pin simm
8mx32 simm 72 pin
4Mx9 DRAM 30-pin SIMM
4MX39
4m dram 72-pin simm 32
DRAM 30-pin SIMM
|
KMM581000AN
Abstract: 581000A KMM581000A
Text: DRAM MODULES KMM581000AN 1M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM581 OOOAN- 7 • • • • • • • tR A C tC A C tR C 70ns 20ns 130ns KMM581 OOOAN- 8 80ns 20ns 150ns KMM581 OOOAN-10 100ns 25ns 180ns Fast Page Mode operation
|
OCR Scan
|
PDF
|
KMM581000AN
KMM581
OOOAN-10
100ns
130ns
150ns
180ns
581000AN
KMM581000AN
581000A
KMM581000A
|
KMM581000BN-6
Abstract: ic sc 4145 KM44C1000BJ KMM581000BN
Text: SAMSUNG EL E C T R O N I C S INC b?E D • 7Tbm4E KMM581000BN DQ15ü7b 3ÖT M S I I G K DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000BN is a 1M b it x 8 Dynamic RAM high density memory module. The Samsung
|
OCR Scan
|
PDF
|
KMM581000BN
KMM581000BN-6
KMM581000BN-7
KMM581000BN-8
110ns
130ns
150ns
KMM581000BN
KM44C1000BJ
ic sc 4145
|
KMM581000A
Abstract: KM41C1000AJ KMM481000A-8
Text: KMM481000A/KMM581000A MEMORY MODULES 1 M x 8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-bit Organization • Performance range: The Samsung KMM481000A and KMM581000A are 1 M x 8 dynamic RAM high density memory modules.
|
OCR Scan
|
PDF
|
KMM481000A/KMM581000A
KMM481000A-8
KMM581000A-8
KMM481000A-10
KMM581000A-10
150ns
180ns
180ns
KMM481000A
KMM581000A
KM41C1000AJ
|
km44c1000aj
Abstract: KMM581000AN
Text: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package
|
OCR Scan
|
PDF
|
KMM581000AN
581000AN
KMM581
44C1000AJ
20-pin
30-pin
KMM581OOOAN
km44c1000aj
KMM581000AN
|
km44c1000aj
Abstract: 581000A
Text: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581OOOAN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM44C1000AJ - 1MX4 in 20-pin SOJ package
|
OCR Scan
|
PDF
|
KMM581000AN
130ns
150ns
180ns
KMM581
30-pin
KMM581OOOAN
KM44C1000AJ
20-pin
581000A
|
KMM581000BN
Abstract: KMM581000BN-7 KM44C1000BJ KMM581000BN-6 KMM581000
Text: KMM581000BN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000BN is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000BN co n sist o f two 4M b it DRAMs KM44C1000BJ 1 M x4 in 20-pin SOJ package mount
|
OCR Scan
|
PDF
|
KMM581000BN
KMM581000BN
KM44C1000BJ
20-pin
30-pin
22juF
KMM581000BN-6
KMM581000BN-7
KMM581000
|
|
44C10
Abstract: No abstract text available
Text: DRAM MODULE 1 Mega Byte KMM581000CN Fast Page Mode 1Mx8 DRAM SIM M , 1K Refresh , 5V G EN E R A L DES C R IPTIO N The Sam sung K M M 581000C N is a 1M bit x 8 FEATURES • Performance Range: D ynam ic RAM high density m em ory module. The S am sung KM M 581000C N consists of tw o CMOS
|
OCR Scan
|
PDF
|
KMM581000CN
581000C
20-pin
130ns
150ns
44C10
|
ICE ICC3
Abstract: KMM581000A-8 KMM581000A-10 KMM581000A10 km41c1000aj 30-pin simm memory KMM481000A-8
Text: SAMSUNG S EM ICONDUCTOR INC E3E D • 7^4142 000Ô523 S ■ T KMM481000A/KMM581000A - ï b - Z Z - l ' ? MEMORY MODULES 1 M x 8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-bit Organization • Performance range: The Samsung KMM481000A and KMM581000A are
|
OCR Scan
|
PDF
|
KMM481000A/KMM581000A
KMM481000A
KMM581000A
KM41C1000AJ
20-pin
22/iF
KMM481000A/KMM581OOOA
M481000A/KM
ICE ICC3
KMM581000A-8
KMM581000A-10
KMM581000A10
30-pin simm memory
KMM481000A-8
|
KMM591000AN8
Abstract: KMM591000AN KMM591000AN-7 AG10 KMM591000AN10 kmm5322000av KMM591000 A1G10 KMM5362000A KMM584000A
Text: FUNCTION GUIDE 1. Introduction 1.1 Dynamic RAM di SAMSUNG Electronics 11 FUNCTION GUIDE ’ New Product eg SAMSUNG Electronics 12 FUNCTION GUIDE 1.2 Dynamic RAM Module CMOS T- 1M x8 - KMM58100QAN-7 KMM58100QAN-8 KMM581000AN-10 KMM591000AN-7 KMM591000AN-8 KMM591000AN-10
|
OCR Scan
|
PDF
|
KMM58100QAN-7
KMM58100QAN-8
KMM581000AN-10
KMM591000AN-7
KMM591000AN-8
KMM591000AN-10
KMM584000A-7
KMM584000A-8
KMM584000A-10
KMM594000A-7
KMM591000AN8
KMM591000AN
KMM591000AN-7
AG10
KMM591000AN10
kmm5322000av
KMM591000
A1G10
KMM5362000A
KMM584000A
|
30 pin simm
Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
Text: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM
|
OCR Scan
|
PDF
|
KMM58256CN
KMM59256CN
KMM532256CV/CVG
KMM536256C/CG
KMM32512CV/CVG
KMM536512C/CG
KMM536512CH
KMM540512C/CG'
KMM540512CM
KMM581000C
30 pin simm
30-pin SIMM RAM
30 pin simm memory
256KX8 SIMM
512KX40
1 x 32 72-pin SIMM
KMM581020BN
72 simm function
KMM5362000
30-pin SIMM
|
KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J
|
OCR Scan
|
PDF
|
KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM424C256Z
SIMM 30-pin
30-pin SIMM RAM
KM44C256bp
KM41C1000BJ
257J
KM44C256BZ
1K x4 static ram
30-pin simm memory "16m x 8"
|
KM44C1000
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. II. Introduction . 11 Product G uide. 14
|
OCR Scan
|
PDF
|
KM41C4000
KM41C1000L
KM41C4001
M5361000A/AG/A1/A1G
KMM5322000AV/AVG
KMM5362000A/AG/A1/A1G
KMM5401000A/AG
KMM5402000A/AG
KM44C1000
|
KM41C4000AJ
Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
Text: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1
|
OCR Scan
|
PDF
|
KM41C4000J
KM41C4000Z
41C4000U
KM41C4000LZ
KM41C4001J
KM41C40012
KM41C4002J
KM41C40022
KM44C1OOOJ
KM44C1000Z
KM41C4000AJ
KM44C1000AZ
"30 pin simm"
KMM584000A
KM41C4001AZ
1Mx4 SOJ
1Mx4 nibble
4Mx1 nibble
|
KMM5334100
Abstract: LM 8227 KMM591000CN-6 LM 8251 m53641 KMM5368103A y 4m 1/Detector/"Detector IC"/"CD"/4Mx8 dram simm
Text: TABLE OF CONTENTS I .F UNC TI ON GUIDE 1. 2. Product G uide. 13
|
OCR Scan
|
PDF
|
KMM581000CN-6/7/8
KMM591000CN-6/7/8
KMM5362203AW/WG-6/7/8
KMM5362209AU/AUG-6/7/8.
KMM5334100
LM 8227
KMM591000CN-6
LM 8251
m53641
KMM5368103A
y 4m
1/Detector/"Detector IC"/"CD"/4Mx8 dram simm
|
41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
|
OCR Scan
|
PDF
|
41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
|
DYNAMIC RAM CROSS REFERENCE
Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
Text: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102
|
OCR Scan
|
PDF
|
KM41C4000
KM41C4001
KM41C4002
KM44C1000
KM44C1002
TC514100
TC514101
TC514102
TC514400
TC514402
DYNAMIC RAM CROSS REFERENCE
KMM5362000
KMM53220
KMM581000
KMM532200
THMS361020
KMM591000
MC-422000A36
|