30QA Search Results

Contextual Info: DIP 14PIH OU TL IN E DR AWING DIP14-P-300 733 Un it in m m DIP 16PIN OUTLINE DRAWING (DIP16-P-30QA)_ Unit in m m DIP 1 SP IN OU TL IN E DR AW IN G (DIP18-P-300A) 18 U nit in mm 10 n i—i r—t i—> i—i i—i r-> -H u i i i i i ri i i ii ii i

30QA

Abstract: KMB010P30QA KMB010P
Contextual Info: SEMICONDUCTOR 30QA MARKING SPECIFICATION FLP-8 PACKAGE 1. Marking method Laser Marking. 2. Marking KMB010P 30QA 1 709 3 2 No. 2007. 5. 21 Item Marking Description Device Name 30QA 30QA Pin No. Dot Pin 1 Lot No. 709 Revision No : 0 7 Year

QM300HA-2H

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H lc V cex Collector current. Collector-emitter voltage. DC current gain . hre Insulated Type UL Recognized 30QA j 1000V 75 Yellow Card No. E80276 <N

30QA

Abstract: marking 702 KMB6D0DN30QA 702 8 PIN diode 702 702 marking
Contextual Info: SEMICONDUCTOR 30QA MARKING SPECIFICATION FLP-8 PACKAGE 1. Marking method Laser Marking. 2. Marking KMB6D0DN 30QA 702 2 No. 2007. 4. 18 1 3 Item Marking Description Device Name 30QA 30QA Pin No. Dot Pin 1 Lot No. 702 Revision No : 0

30QA

Abstract: 705 transistor KMB7D1DP30QA
Contextual Info: SEMICONDUCTOR 30QA MARKING SPECIFICATION FLP-8 PACKAGE 1. Marking method Laser Marking. 2. Marking KMB7D1DP 30QA 705 2 No. 2007. 4. 18 1 3 Item Marking Description Device Name 30QA 30QA Pin No. Dot Pin 1 Lot No. 705 Revision No : 0

KMB014P

Abstract: KMB014P30QA 30QA
Contextual Info: SEMICONDUCTOR 30QA MARKING SPECIFICATION FLP-8 PACKAGE 1. Marking method Laser Marking. 2. Marking KMB014P 30QA 1 706 3 2 No. 2007. 5. 21 Item Marking Description Device Name 30QA 30QA Pin No. Dot Pin 1 Lot No. 706 Revision No : 0 7 Year

Contextual Info: SEMICONDUCTOR 30QA TECHNICAL DATA SBD and P-Ch Trench MOSFET GENERAL DESCRIPTION ・It is particularly suited for switching such as DC/DC Converters. ・It is driven as low as 4.5V and fast switching, high efficiency. H T FEATURES G P D ・VDSS=-30V, ID=-3.5A.

Contextual Info: R EV DESCRIPTION DATE D ES IG N ED A 1.25. 0. 6 1 Connec to r o u t 1 i ne li ill , , lll ¡1 ¿1 di ili li X . i : 4 -N o . I - |fMark 1.35 t o . I Recomaendable 4.05 T H I S DRAWING C O N T A I N S I N F O R M A T I O N T HA T AND S H O U L D N O T BE U S E D W I T H O U T W R I T T E N

N mos 100v 100A

Contextual Info: EFFECT OF LEAD WIRE LENGTHS ON PROTECTOR CLAMPING VOLTAGES by O. M elville Clark and Joseph J. Pizzicanti Originally presented at the Federal Aviation Adnninistration-Ftoriria Institute of Technology Workshop on Grounding and Lightning Technology March, 1979 - Melbourne, Florida

C451

Contextual Info: International iqrIRectifier Provisional Data Sheet PD-9.1174 IRGDDN300M06 IRGRDN300M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 300A • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail"

Contextual Info: 5mm Red AlGaInP Ultra Bright LED LC503THR1−30Q-A Features 5mm Package High Optical Power High Luminous Intensity Water Clear Lens All Plastic Mold Type Applications Outdoor Message Centers VMS Automotive Interior Lighting Traffic Signals Pedestrian Signals

KMB010P

Abstract: KMB010P30QA 30QA
Contextual Info: SEMICONDUCTOR 30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack.

KMB014P30QA

Abstract: 30QA KMB014P
Contextual Info: SEMICONDUCTOR 30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack.

Contextual Info: INTERNATIONAL RECTIFIER I« R 73 dF J 4655452 □□0blì53 fl T-2-?-/f Data Sheet No. PD-3.145 in t e r n a t io n a l r e c t if ie r S23DF SERIES 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 ¿/s 210 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs

C1022

Abstract: IRGTDN300K06 "welding circuit " IGBT 1022 MC
Contextual Info: Provisional Data Sheet PD-9.1199 Rectifier S IRGTDN300K06 “HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT Half-Bridge -o3 r VCE = 600V lc = 300A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

Contextual Info: Advanced Power MOSFET IR F R / U 1 2 0 A FEATURES • ■ ■ ■ ■ ■ ■ B V qss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA M ax. @ VDS=100V

Contextual Info: SEMICONDUCTOR 30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for Battery pack.

Contextual Info: 5mm Green InGaN Ultra Bright LED LC503PPG1−30Q-A Features 5mm Package High Optical Power High Luminous Intensity Water Clear Lens All Plastic Mold Type PRELIMINARY SPEC Applications Outdoor Message Centers VMS Automotive Interior Lighting Traffic Signals

Contextual Info: 5mm Blue InGaN Ultra Bright LED LC503PBL1−30Q-A Features 5mm Package High Optical Power High Luminous Intensity Water Clear Lens All Plastic Mold Type Applications Outdoor Message Centers VMS Automotive Interior Lighting Traffic Signals Pedestrian Signals

TS 4142

Abstract: IRf 334
Contextual Info: Advanced Power MOSFET IR L R / U 034A FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10nA Max. @ VDS= 60V

KMB6D0DN30QA

Abstract: 30QA
Contextual Info: SEMICONDUCTOR 30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC

KMB8D0P

Abstract: KMB8D0P30QA KMB8D0P30Q 30QA KMB8D0P 30QA
Contextual Info: SEMICONDUCTOR 30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Load Switch and Battery pack.

KMB012N

Abstract: 30QA KMB012N30QA
Contextual Info: SEMICONDUCTOR 30QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack.

24V 10A SMPS

Abstract: KMB010P30QA 30QA
Contextual Info: SEMICONDUCTOR 30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS.