30RAA Search Results

TLP645G

Abstract: TLP645
Contextual Info: TLP645G GaAs IRED a PHOTO-THYRISTOR TENTATIVE DATA OFFICE MACHINE. Unit in mm HOUSEHOLE USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP645G consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

H1AA

Abstract: E7750
Contextual Info: I' KKI ' AKKII B Y : SI ’ E C N o . 19i 2 J A N U A R Y . 20 by : 1 9 9 2 J A N U A R Y . 20 k. * ISSUE E L E C T R O N I C C O MP O N E N T S C R O U P SHARP C OR P OR A TI O N PAGE 1 9 9 2 J A N U A R Y . 20 SPECIFICATION JANUARY 20, 19 9 2 3 E L E C T R O N I C COMPONENTS D I V .

Contextual Info: CRO MPS3569 NPN SILICON TRANSISTOR TO-92A DESCRIPTION MPS3569 is NPN silicon plapar epitaxial transistor designed fo r AF medium power am plifiers. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage V cbo 80V Collector-Emitter Voltage VcEO 40V Emitter-Base Voltage

Contextual Info: N EC ELECTRONICS INC Tfl T'<J3~JZ-S D Ê|bM 2?S2 S OCmiS^ 1 POWER TRANSISTOR ARRAY •EELECTRON D E V IC E ^ # ' . NPN SILICON e p i t a x i a l low speed power / / P A I 4 5 4 t r a n s is t o r H array sw it c h in g DESCRIPTION The u PA1454H Is an array of four power tran sisto rs. I t Is esp e cially

MPS3569

Contextual Info: IVI m SILICON TRANSISTOR TO-92A DESCRIPTION MPS3569 is NPN silicon plapar epitaxial transistor designed for AF medium power amplifiers. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation

transistor BC142

Abstract: BC142 BC143 bc143 transistor
Contextual Info: BC142 GENERAL DESCRIPTION : The BC142 is a NPN silicon planar epitaxial transistor. It features low saturation voltage, low collector cut­ off current and high breakdown voltage. It is intended for use in driver stages of high power audio amplifiers. It can

TA78DS05P

Abstract: TA78DS10P oc 502
Contextual Info: ÏÏÎIÏÏ 'r— -¡^ '-• * -* '"^‘ 21 a 1D17E47 0011331 5 TOSHIBA-. ELECTRONIC 02 TA 78D S 05P , TA 78D S 10P T-58-H -0 BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC o 5V, 10V LOW DROPOUT VOLTAGE REGULATOR The TA78DS05P and TA78DS10P are three terminal regulator

mps3569

Abstract: ebc Transistor
Contextual Info: CRO DESCRIPTION MPS3569 NPN SILICON TRANSISTOR TO-92A MPS3569 is NPN silicon plapar epitaxial transistor designed for AF medium power amplifiers. EBC ABSOLUTE MAXIMUM RATINGS 80V 40V 5V 1A 625mW -55 to +150°C V cbo VcEO V ebo Collector-Base Voltage Collector-Emitter Voltage

VALVO Handbuch

Abstract: LDR 04 valvo handbuch rohren ef861 PENTODE pl 508 Str 5654 Geiger-muller DG 13-54 rbs 6201 ci LA 7804 ON
Contextual Info: T y p e n v e rz e ic h n is Ü b e rsic h t Ä q u iv a le n z lis te 1 V e rstä rk e rrö h re n M e ß d io d e n R a u s c h d io d e n 1 K a t o d e n s t r a h lrö h re n für M e ß z w e c k e K a m e ra rö h re n A b fa strö h re n B ild rö h re n

NJL721B

Contextual Info: NJL1121B C Jnq GaAIAs INFRARED EMITTING DIODE OUTLINE typ. Unit FEATURES • High output, high speed infrared emitting diode due to the use of GaAIAs. • High output — equivalent to 4 times approximately to that of our conventional products due to the use o f GaAIAs chip and header cup