30V 20A SMPS Search Results

Contextual Info: AON7430 30V N-Channel MOSFET General Description Features The AON7430 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS (V) = 30V ID = 20A

DEIC420

Abstract: DEIC420 RF MOSFET Gate Driver IC IXDD415SI 13.56Mhz class e power amplifier 13.56MHZ mosfet DE-275 EVIC420 1 ampere 15v transformer IXDD415
Contextual Info: DEIC420 20 Ampere Low-Side Ultrafast RF MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 20A Peak • Wide Operating Range: 8V to 30V

DEIC420

Abstract: DEIC420 RF MOSFET Gate Driver IC IXDD415SI DEIC420 application 13.56Mhz class e power amplifier power amplifier mosfet up to 50mhz "RF MOSFETs" DE-275 EVIC420 13.56MHZ mosfet
Contextual Info: DEIC420 20 Ampere Low-Side Ultrafast RF MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 20A Peak • Wide Operating Range: 8V to 30V

DEIC420 RF MOSFET Gate Driver IC

Abstract: IXDD415
Contextual Info: DEIC420 20 Ampere Low-Side Ultrafast RF MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 20A Peak • Wide Operating Range: 8V to 30V

DEIC421

Abstract: 13.56Mhz class e power amplifier mosfet driver 5v to 30v RF MOSFET Driver RF MOSFETs power amplifier mosfet up to 50mhz SMPS CIRCUIT DIAGRAM 5V 20A "RF MOSFETs" Class E power amplifier, 13.56MHz DEIC420 RF MOSFET Gate Driver IC
Contextual Info: DEIC421 RF MOSFET DRIVER 20 Ampere Ultrafast RF MOSFET Driver With Kelvin Connection Features • Built using the advantages and compatibility of CMOS and IXYS HDMOS processes • Latch-Up Protected • High Peak Output Current: 20A Peak • Wide Operating Range: 8V to 30V

STW20NB50

Contextual Info: STW20NB50 N - CHANNEL 500V - 0.22ft - 20A - TO-247 PowerMESH MOSFET TYPE V STW 20NB50 . . . . . . . dss 500 V R d S o i i < 0 .2 5 Q. Id 20 A TYPICAL RDs(on) = 0.22 £2 EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STW20NB50

Contextual Info: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

20NB50

Abstract: STW20NB50
Contextual Info: STW20NB50  N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW 20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

STW20NB50

Contextual Info: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STW20NB50

Contextual Info: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STW20NB50

Contextual Info: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.27 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

AON6784

Contextual Info: AON6784 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6784 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching

Contextual Info: AON6782 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6782 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching

AON6790

Contextual Info: AON6790 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6790 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching

Contextual Info: AON6780 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON6780 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching

AON6788

Contextual Info: AON6788 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON6788 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

Contextual Info: AON6780 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6780 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching

AON6786

Contextual Info: AON6786 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON6786 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

Contextual Info: AO4714 30V N-Channel MOSFET 1234566576 General Description Product Summary TM SRFET AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

DFN 3.3X3.3

Abstract: 33X3
Contextual Info: AON7784 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON7784 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low side FET in SMPS, load

AON6716L

Abstract: FET 4900
Contextual Info: AON6716L 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AON6716L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching

Contextual Info: AON6702 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON6702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

AON6704L

Contextual Info: AON6704L 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET AON6704L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

Contextual Info: AON6722 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching